Ukufakwa komhwamuko wekhemikhali ojatshuliswe ngokushisa

Ngokuvamile ukusabela kwe-CVD kuncike emazingeni okushisa aphezulu, yingakho ebizwa nge-thermallly excited chemical vapor deposition (TCVD).Ivamise ukusebenzisa izandulela ze-inorganic futhi yenziwa kuma-hot-wall nama-cold-wall reactor.Izindlela zayo ezishisayo zifaka ukufudumeza kwe-radio frequency (RF), ukushisa ngemisebe ye-infrared, ukumelana nokushisa, njll.

I-Hot wall chemical vapour deposition
Empeleni, i-hot-wall chemical vapor deposition reactor iyisithando somlilo esishisayo, esivamise ukushisisa ngezinto eziphikisayo, ukuze kukhiqizwe ngezikhathi ezithile.Umdwebo wendawo yokukhiqiza umhwamuko wamakhemikhali odongeni oshisayo wokumboza ithuluzi le-chip uboniswa kanje.Lokhu kufakwa komhwamuko wamakhemikhali odonga olushisayo kungamboza i-TiN, i-TiC, i-TiCN namanye amafilimu azacile.I-reactor ingaklanywa ukuthi ibe nkulu ngokwanele bese ibamba inombolo enkulu yezingxenye, futhi izimo zingalawulwa ngokunembile kakhulu ukuze kufakwe.I-Pic 1 ibonisa idivayisi ye-epitaxial layer ye-silicon doping yokukhiqiza idivayisi ye-semiconductor.I-substrate esithandweni ibekwe endaweni eqondile ukuze kuncishiswe ukungcoliswa kwendawo yokubeka ngezinhlayiya, futhi kwandise kakhulu ukulayishwa kokukhiqiza.Ama-hot-wall reactor okukhiqizwa kwe-semiconductor ngokuvamile asetshenziswa ngengcindezi ephansi.