Ngokuvamile ukusabela kwe-CVD kuncike ekushiseni okuphezulu, yingakho kubizwa ngokuthi i-thermally excited chemical vapor deposition (TCD). Ngokuvamile isebenzisa izinto ezingezona izinto eziphilayo futhi yenziwa kuma-reactors e-hot-wall kanye ne-cold-wall. Izindlela zayo zokushisa zifaka phakathi ukushisa kwe-radio frequency (RF), ukushisa kwemisebe ye-infrared, ukushisa kokumelana, njll.
Ukufakwa komphunga wamakhemikhali odongeni olushisayo
Empeleni, i-reactor yokubeka umhwamuko wamakhemikhali odongeni olushisayo iyisithando sokushisa, esivame ukushiswa ngezinto ezivimbelayo, ukuze kukhiqizwe ngezikhathi ezithile. Umdwebo wesikhungo sokukhiqiza i-hot-wall vapor deposition yamakhemikhali odongeni olushisayo ukuze kuhlanganiswe ithuluzi le-chip uboniswa kanje. Lokhu kufakwa kwe-hot-wall vapor yamakhemikhali kungamboza i-TiN, i-TiC, i-TiCN namanye amafilimu amancane. I-reactor ingaklanywa ibe nkulu ngokwanele bese ibamba inani elikhulu lezingxenye, futhi izimo zingalawulwa ngokunembile ukuze kubekwe. Isithombe 1 sibonisa idivayisi yesendlalelo se-epitaxial sokufaka i-silicon doping ekukhiqizweni kwedivayisi ye-semiconductor. I-substrate esithandweni ibekwa ohlangothini oluqondile ukuze kuncishiswe ukungcoliswa kwendawo yokufaka yizinhlayiya, futhi kwandise kakhulu umthwalo wokukhiqiza. Ama-hot-wall reactor okukhiqiza i-semiconductor ngokuvamile asebenza ngokucindezela okuphansi.
Isikhathi sokuthunyelwe: Novemba-08-2022