Ngokubanzi ii-CVD reactions zixhomekeke kumaqondo obushushu aphezulu, yiyo loo nto zibizwa ngokuba yi-thermally excited chemical vapor deposition (TCD). Ngokuqhelekileyo isebenzisa ii-inorganic precursors kwaye yenziwa kwii-hot-wall kunye nee-cold-wall reactors. Iindlela zayo zokufudumeza ziquka ukufudumeza ngerediyo (RF), ukufudumeza ngemitha ye-infrared, ukufudumeza ngokumelana, njl.njl.
Ukufakwa komphunga weekhemikhali eludongeni olushushu
Enyanisweni, i-reactor ye-hot-wall chemical vapor deposition yi-thermostatic furnace, edla ngokufudunyezwa ngezinto ezikhuselayo, ukuze kwenziwe imveliso engapheliyo. Umzobo wesixhobo sokuvelisa i-hot-wall chemical vapor deposition yesixhobo se-chip coating uboniswa ngolu hlobo lulandelayo. Olu xinzelelo lwe-hot-wall chemical vapor deposition lunokugquma i-TiN, i-TiC, i-TiCN kunye nezinye iifilimu ezincinci. I-reactor ingayilwa ibe nkulu ngokwaneleyo ize ibambe inani elikhulu lezinto, kwaye iimeko zinokulawulwa ngokuchanekileyo ukuze ibekwe. Umfanekiso 1 ubonisa isixhobo se-epitaxial layer se-silicon doping yemveliso yesixhobo se-semiconductor. I-substrate ekwi-furnace ibekwe kwicala elithe nkqo ukunciphisa ungcoliseko lomphezulu we-deposition ngamasuntswana, kwaye yonyuse kakhulu umthwalo wemveliso. I-hot-wall reactors yemveliso ye-semiconductor zihlala zisebenza ngoxinzelelo oluphantsi.
Ixesha lokuthumela: Novemba-08-2022