Kazhinji CVD reactions dzinoenderana nekupisa kwakanyanya, saka dzinonzi thermally excited chemical vapor deposition (TCD). Inowanzo shandisa inorganic precursors uye inoitwa muma hot-wall uye cold-wall reactors. Nzira dzayo dzekupisa dzinosanganisira radio frequency (RF) heating, infrared radiation heating, resistance heating, nezvimwewo.
Kupisa kwemakemikari emhepo inopisa pamadziro
Kutaura zvazviri, reactor yekupisa makemikari inodzivirira kupisa, inowanzo piswa nezvinhu zvinodzivirira kupisa, kuti ishandiswe nguva nenguva. Mufananidzo wekugadzira nzvimbo yekupisa makemikari inodzivirira kupisa kwemidziyo yechip unoratidzwa seizvi. Iyi hot-wall chemical vapor deposition inogona kufukidza TiN, TiC, TiCN nedzimwe firimu dzakatetepa. Iyo reactor inogona kugadzirwa yakakura zvakakwana yozotakura huwandu hwakawanda hwezvikamu, uye mamiriro ezvinhu anogona kudzorwa zvakanyatsonaka kuti ishandiswe. Mufananidzo 1 unoratidza epitaxial layer device yesilicon doping yekugadzira semiconductor device. Substrate iri muchoto inoiswa munzira yakatwasuka kuderedza kusvibiswa kwenzvimbo yekuisa nezvidimbu, uye kuwedzera zvakanyanya mutoro wekugadzira. Hot-wall reactors yekugadzira semiconductor inowanzo shandiswa pakumanikidzwa kwakaderera.
Nguva yekutumira: Mbudzi-08-2022