Gushyira umwuka w'ubushyuhe mu buryo bushyushye

Muri rusange, CVD iterwa n'ubushyuhe bwinshi, bityo ikaba yitwa thermally excited chemical vapor deposition (TCD). Muri rusange ikoresha inorganic precursors kandi ikorerwa muri hot-wall na cold-wall reactors. Uburyo bwayo bwo gushyushya burimo gushyushya radio frequency (RF), gushyushya radiation ya infrared, gushyushya resistance, nibindi.

Gushyira umwuka w'ubushyuhe ku rukuta
Mu by’ukuri, reactor yo gushyira umwuka mu rukuta rushyushye ni itanura rikoresha thermostat, rikunze gushyushya ibintu birwanya, kugira ngo rikoreshwe rimwe na rimwe. Igishushanyo cy’aho igikoresho cyo gushyira umwuka mu rukuta rushyushye gishyirwamo ibikoresho bya chips kigaragazwa gutya. Iyi reactor yo gushyira umwuka mu rukuta rushyushye ishobora gutwikira TiN, TiC, TiCN n’izindi firime nto. Reactor ishobora gutegurwa neza hanyuma igafata ibice byinshi, kandi imiterere yayo ishobora kugenzurwa neza kugira ngo ishyirwemo. Ifoto ya 1 igaragaza igikoresho cya epitaxial cyo gushyiramo silicon mu gukora ibikoresho bya semiconductor. Substrate iri mu itanura ishyirwa mu cyerekezo gihagaze kugira ngo igabanye kwanduzwa kw’ubuso bw’aho bishyiramo n’uduce duto, kandi yongera cyane umutwaro w’umusaruro. Reactor zo gushyira umwuka mu rukuta rushyushye zikoreshwa ku gitutu gito.