Ukuphalaza kuyisenzakalo lapho izinhlayiya ezinamandla (ngokuvamile ama-ion amagesi amahle) zishaya khona ubuso bento eqinile (ngezansi ebizwa ngokuthi impahla eqondiwe), okubangela ukuba ama-athomu (noma ama-molecule) ebusweni bento eqondiwe aphume kuyo.
Lesi simo satholakala yiGrove ngo-1842 lapho izinto ze-cathode zithuthelwa odongeni lwepayipi le-vacuum ngesikhathi sokuhlola ukutadisha ukugqwala kwe-cathodic. Le ndlela yokufaka ama-sputtering e-substrate deposition yamafilimu amancane yatholakala ngo-1877, ngenxa yokusebenzisa le ndlela yokufaka ama-sputtering amafilimu amancane ezigabeni zokuqala zesilinganiso sokufutha siphansi, isivinini sefilimu esihamba kancane, kumele sibekwe kudivayisi yokucindezela okuphezulu futhi sidlulele kugesi ethintekayo kanye nezinye izinkinga eziningi, ngakho-ke intuthuko ihamba kancane kakhulu futhi icishe iqedwe, kuphela ezinsimbini eziyigugu ezisabela ngamakhemikhali, izinsimbi eziphikisayo, ama-dielectric, kanye namakhemikhali, izinto ezincane zezicelo. Kuze kube ngawo-1970, ngenxa yokuvela kobuchwepheshe bokufaka ama-sputtering be-magnetron, ukufakwa kwama-sputtering kuye kwathuthukiswa ngokushesha, kwaqala ukungena ekuvuseleleni komgwaqo. Lokhu kungenxa yokuthi indlela yokuphalaza i-magnetron ingavinjelwa yinsimu ye-electromagnetic ehambisana ne-orthogonal kuma-electron, okwandisa amathuba okungqubuzana kwama-electron nama-molecule egesi, hhayi nje kuphela ukunciphisa i-voltage eyengeziwe ku-cathode, futhi kuthuthukiswe izinga lokuphalaza lama-ion amahle ku-cathode eqondiwe, kunciphisa amathuba okuqhunyiswa kwama-electron ku-substrate, ngaleyo ndlela kuncishiswe izinga lokushisa layo, "ngesivinini esiphezulu, izinga lokushisa eliphansi Izici ezimbili eziyinhloko ze-"isivinini esiphezulu kanye nezinga lokushisa eliphansi".
Kuze kube ngawo-1980, nakuba kwabonakala eminyakeni eyishumi nambili kuphela, kuhlukile elabhorethri, empeleni emkhakheni wokukhiqizwa kwezimboni eziningi. Ngokuthuthuka okuqhubekayo kwesayensi nobuchwepheshe, eminyakeni yamuva nje emkhakheni wokumboza nge-sputtering kanye nokwethulwa kwe-ion beam sputtering ethuthukisiwe, ukusetshenziswa kwe-wide beam yomthombo we-ion wamanje onamandla kuhlanganiswe nokuguqulwa kwensimu yamagnetic, kanye nokuhlanganiswa kwe-dipole sputtering evamile ehlanganiswe nemodi entsha ye-sputtering; futhi kuzoba ukwethulwa kwamandla kagesi ashintshana phakathi kwama-frequency kuya emthonjeni we-magnetron sputtering target. Lobu buchwepheshe be-AC magnetron sputtering sputtering, obubizwa ngokuthi i-twin target sputtering, abuqedi nje kuphela umphumela "wokunyamalala" we-anode, kodwa futhi buxazulula inkinga "yobuthi" ye-cathode, okuthuthukisa kakhulu ukuzinza kwe-magnetron sputtering, futhi kunikeze isisekelo esiqinile sokukhiqizwa kwezimboni kwamafilimu amancane ahlanganisiwe. Lokhu kuthuthukise kakhulu ukuzinza kwe-magnetron sputtering futhi kwanikeza isisekelo esiqinile sokukhiqizwa kwezimboni kwamafilimu amancane ahlanganisiwe. Eminyakeni yamuva nje, ukumbozwa kwe-sputtering sekuyindlela yobuchwepheshe yokulungiselela amafilimu ashisayo, esebenza emkhakheni wobuchwepheshe bokumbozwa kwe-vacuum.
–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua
Isikhathi sokuthunyelwe: Disemba-05-2023