Ukutshiza yinto apho amasuntswana anamandla (ngokuqhelekileyo ii-ions ezintle zegesi) abetha umphezulu wento eqinileyo (ebizwa ngokuba yizinto ekujoliswe kuzo ngezantsi), nto leyo ebangela ukuba iiathom (okanye iimolekyuli) ezikumphezulu wento ekujoliswe kuyo ziphume kuyo.
Le nto yafunyanwa yiGrove ngo-1842 xa izinto ze-cathode zafuduselwa eludongeni lwetyhubhu ye-vacuum ngexesha lovavanyo lokufunda ukubola kwe-cathodic. Le ndlela yokutshiza kwi-substrate deposition yeefilimu ezincinci yafunyanwa ngo-1877, ngenxa yokusebenzisa le ndlela yokutshiza iifilimu ezincinci kwizigaba zokuqala zesantya sokutshiza siphantsi, isantya sefilimu esicothayo, kufuneka simiselwe kwisixhobo soxinzelelo oluphezulu kwaye sidlule kwigesi echaphazelekayo kunye nezinye iingxaki ezininzi, ngoko ke uphuhliso lucotha kakhulu kwaye phantse lupheliswe, kuphela kwiintsimbi ezixabisekileyo ezisabela ngokweekhemikhali, iintsimbi ezichasayo, ii-dielectrics, kunye neekhemikhali, izinto kwinani elincinci lezicelo. Kude kube yiminyaka yoo-1970, ngenxa yokuvela kwetekhnoloji yokutshiza i-magnetron, ukutshiza kuye kwaphuhliswa ngokukhawuleza, kwaqala ukungena ekuvuseleleni kwendlela. Oku kungenxa yokuba indlela yokutshiza imagnetron inokuthintelwa yintsimi ye-electromagnetic e-orthogonal kwii-electron, okwandisa amathuba okungqubana kwee-electron kunye nee-molecule zegesi, akunciphisi nje kuphela i-voltage eyongeziweyo kwi-cathode, kwaye kuphuculwe izinga lokutshiza kwee-ions ezintle kwi-cathode ekujoliswe kuyo, kunciphisa amathuba okuqhushumba kwee-electron kwi-substrate, ngaloo ndlela kunciphisa ubushushu bayo, nge "isantya esiphezulu, ubushushu obuphantsi Iimpawu ezimbini eziphambili ze "isantya esiphezulu kunye nobushushu obuphantsi".
Ukuya kuthi ga kwiminyaka yoo-1980, nangona yayibonakala ineminyaka elishumi elinesibini kuphela, ihlukile kwilebhu, ngokwenene ikwicandelo lemveliso yobuninzi bemizi-mveliso. Ngophuhliso olongezelelekileyo lwesayensi netekhnoloji, kwiminyaka yakutshanje kwicandelo lokutshiza kunye nokungeniswa kwe-ion beam kwandisa ukutshiza, ukusetyenziswa komqadi obanzi womthombo we-ion onamandla wangoku kunye ne-magnetic field modulation, kunye nokudityaniswa kwe-dipole sputtering eqhelekileyo eyenziwe yindlela entsha yokutshiza; kwaye kuya kuba kukungeniswa kombane ojikelezayo ophakathi ukuya kumthombo wethagethi yokutshiza ye-magnetron. Le teknoloji yokutshiza ye-AC magnetron sputtering ephakathi, ebizwa ngokuba yi-twin target sputtering, ayisusi nje kuphela isiphumo "sokunyamalala" se-anode, kodwa ikwasombulula ingxaki "yokutyhefa" ye-cathode, ephucula kakhulu ukuzinza kokutshiza kwe-magnetron, kwaye ibonelela ngesiseko esiqinileyo semveliso yemizi-mveliso yeefilimu ezincinci ezidityanisiweyo. Oku kuphucule kakhulu ukuzinza kokutshiza kwe-magnetron kwaye kwabonelela ngesiseko esiqinileyo semveliso yemizi-mveliso yeefilimu ezincinci ezidityanisiweyo. Kwiminyaka yakutshanje, ukugquma nge-sputtering kuye kwaba yiteknoloji yokulungiselela ifilimu eshushu, esebenzayo kwicandelo leteknoloji yokugquma nge-vacuum.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha lokuthumela: Disemba-05-2023