Ukugqoka kwe-ion beam sputtering kanye ne-ion beam etching

1. Ukugqoka okukhafulayo kogongolo lwe-ion

Ubuso bezinto bugcwele umsebe we-ion onamandla aphakathi nendawo, futhi amandla ama-ion awangeni ku-crystal lattice yezinto, kodwa adlulisela amandla kuma-athomu aqondiwe, okubangela ukuba aqhume kude nobuso bezinto, bese enza ifilimu encane ngokubeka endaweni yokusebenza. Ngenxa yokuqhuma okukhiqizwa umsebe we-ion, amandla ama-athomu engqimba yefilimu aqhumayo aphezulu kakhulu, futhi izinto eziqondiwe ziqhuma umsebe we-ion endaweni evulekile ephezulu, ubumsulwa bengqimba yefilimu buphezulu, futhi amafilimu asezingeni eliphezulu angafakwa, kuyilapho ukuzinza kwengqimba yefilimu yomsebe we-ion kuthuthukiswa, okungafeza inhloso yokuthuthukisa izakhiwo ezibonakalayo nezemishini zengqimba yefilimu. Inhloso yokuqhuma umsebe we-ion ukwakha izinto ezintsha zefilimu ezincane.

2. Ukuqopha imisebe ye-ion

Ukuchoma ngomqamu we-ion nakho kuyindlela yokuqhuma ngomqamu we-ion enamandla aphakathi ebusweni bezinto ukuze kukhiqizwe umphumela wokubhoboza, ukuchoma ku-substrate, kuyidivayisi ye-semiconductor, amadivayisi e-optoelectronic kanye nezinye izindawo zokukhiqizwa kobuchwepheshe be-graphics core. Ubuchwepheshe bokulungiselela ama-chips kumasekethe ahlanganisiwe e-semiconductor buhilela ukulungiswa kwezigidi zama-transistors ku-single-crystal silicon wafer enobubanzi obungu-Φ12in (Φ304.8mm). I-transistor ngayinye yakhiwe ngezingqimba eziningi zamafilimu amancane anemisebenzi ehlukene, equkethe ungqimba olusebenzayo, ungqimba oluvikelayo, ungqimba lokuhlukaniswa, kanye nongqimba oluqhubayo. Ungqimba ngalunye olusebenzayo lunephethini yalo, ngakho-ke ngemva kokuba ungqimba ngalunye lwefilimu olusebenzayo lufakwe, izingxenye ezingenamsebenzi zidinga ukuchoma ngomqamu we-ion, kushiye izingxenye zefilimu eziwusizo zingathintekile. Namuhla, ububanzi bentambo ye-chip bufinyelele ku-7mm, futhi ukuchoma ngomqamu we-ion kuyadingeka ukulungiselela iphethini elihle kangaka. Ukuchoma ngomqamu we-ion kuyindlela yokuchoma eyomile enokunemba okuphezulu kokuchoma uma kuqhathaniswa nendlela yokuchoma emanzi esetshenziswe ekuqaleni.

Ubuchwepheshe bokuchola imisebe ye-ion obune-etching ye-ion engasebenzi kanye ne-etching ye-ion esebenzayo enezinhlobo ezimbili. Eyokuqala ene-argon ion beam etching, ingeyempendulo yomzimba; eyesibili ene-fluorine ion beam sputtering, i-fluorine ion beam kanye namandla aphezulu okukhiqiza indima ye-tramp, i-fluorine ion beam nayo ingacholwa nge-SiO2₂、Si₃Ama-N4, GaAs, W kanye namanye amafilimu amancane anokusabela kwamakhemikhali, kokubili inqubo yokusabela ngokomzimba, kodwa futhi inqubo yokusabela kwamakhemikhali yobuchwepheshe bokuchoma be-ion beam, izinga lokuchoma liyashesha. Ukuchoma kwamagesi aqothulayo okusabela yi-CF₄、C₂F₆、CCl4、BCl₃, njll., ama-reactant akhiqizwe e-SiF₄、SiCl₄、GCl₃kanye ne-WF₆ lapho kukhishwa khona amagesi agqwalisayo. Ubuchwepheshe bokuqopha imisebe ye-ion buwubuchwepheshe obuyinhloko bokukhiqiza imikhiqizo yobuchwepheshe obuphezulu.

–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua