Ingubo yokutshiza ye-ion beam kunye ne-ion beam etching

1. Ukwaleka kwe-ion beam

Umphezulu wezinto ugqunywe nge-ion beam yamandla aphakathi, kwaye amandla ee-ion awangeni kwi-crystal lattice yezinto, kodwa adlulisela amandla kwii-athomu ezijoliswe kuzo, nto leyo ebangela ukuba ziqhume kude nomphezulu wezinto, zize emva koko zenze ifilimu encinci ngokuyibeka kwindawo yokusebenza. Ngenxa yokuqhuma okuveliswa yi-ion beam, amandla ee-athomu zefilimu eziqhumayo aphezulu kakhulu, kwaye izinto ezijoliswe kuzo ziqhuma nge-ion beam kwindawo ephezulu yokuphefumla, ubunyulu bomaleko wefilimu buphezulu, kwaye iifilimu ezisemgangathweni ophezulu zinokufakwa, ngelixa uzinzo lomaleko wefilimu ye-ion beam luphuculiwe, nto leyo enokufezekisa injongo yokuphucula iipropati zokukhanya kunye nezoomatshini zomaleko wefilimu. Injongo yokuqhuma kwe-ion beam kukwenza izinto ezintsha zefilimu ezincinci.

2. Ukukrola umqadi we-ion

Ukugrumba kwe-ion beam kukwayindlela ephakathi yokugrumba umphezulu wezinto ukuze kuveliswe ukutshiza, isiphumo sokugrumba kwi-substrate, sisixhobo se-semiconductor, izixhobo ze-optoelectronic kunye nezinye iindawo zokuveliswa kwetekhnoloji yemizobo engundoqo. Itekhnoloji yokulungiselela iitships kwiesekethe ezidibeneyo ze-semiconductor ibandakanya ukulungiswa kwezigidi zee-transistors kwi-single-crystal silicon wafer enobubanzi be-Φ12in (Φ304.8mm). I-transistor nganye yakhiwe ngeeleya ezininzi zeefilimu ezincinci ezinemisebenzi eyahlukeneyo, equka umaleko osebenzayo, umaleko wokukhusela, umaleko wokuzihlukanisa, kunye nomaleko oqhubayo. Umaleko ngamnye osebenzayo unepateni yawo, ngoko ke emva kokuba umaleko ngamnye wefilimu esebenzayo ufakwe ipleyiti, iindawo ezingasebenziyo kufuneka zigrumbe nge-ion beam, zishiye izinto zefilimu eziluncedo zingabi nanto. Kule mihla, ububanzi bentambo yetship bufikelele kwi-7mm, kwaye ukugrumba kwe-ion beam kuyimfuneko ukulungiselela ipateni entle kangaka. Ukugrumba kwe-ion beam yindlela yokugrumba eyomileyo echanekileyo kakhulu xa kuthelekiswa nendlela yokugrumba emanzi esetyenziswe ekuqaleni.

Itekhnoloji yokugcaba i-ion beam ene-activated ion beam etching kunye ne-active ion beam etching eneentlobo ezimbini. Eyokuqala ene-argon ion beam etching, yeyempendulo ebonakalayo; eyesibini ene-fluorine ion beam sputtering, i-fluorine ion beam ukongeza kumandla aphezulu okuvelisa indima ye-tramp, i-fluorine ion beam inokugcaba nge-SiO2₂、Si₃Iifilimu ze-N4, GaAs, W kunye nezinye ezibhityileyo zine-chemical reaction, zombini yinkqubo yokusabela ngokwasemzimbeni, kodwa ikwayinkqubo yokusabela kwamakhemikhali yetekhnoloji yokuqhekeza i-ion beam, izinga lokuqhekeza likhawuleza. Iigesi ezirhabaxa ze-reaction etching ziyi-CF₄、C₂F₆、CCl4、BCl₃njl., ii-reactants eziveliswe yi-SiF₄、SiCl₄、GCl₃kunye ne-WF₆ zikhutshwa iigesi ezirhabaxa. Itekhnoloji yokugrumba i-ion beam yeyona teknoloji iphambili yokuvelisa iimveliso zobuchwepheshe obuphezulu.

–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua