1. Ion beam sputtering coating
The surface of the material is bombarded with a medium-energy ion beam, and the energy of the ions do not enter the crystal lattice of the material, but transfer the energy to the target atoms, causing them to sputter away from the surface of the material, and then form a thin film by deposition on the workpiece. Because of the sputtering produced by the ion beam, the energy of the sputtered film layer atoms is very high, and the target material is bombarded with the ion beam in a high vacuum, the purity of the film layer is high, and high quality films can be deposited, while the stability of the ion beam film layer is improved, which can achieve the purpose of improving the optical and mechanical properties of the film layer. The purpose of ion beam sputtering is to form new thin film materials.
2. Ion beam etching
Ion beam etching is also a medium-energy ion beam bombardment of the surface of the material to produce sputtering, etching effect on the substrate, is a semiconductor device, optoelectronic devices and other areas of the production of graphics core technology. The preparation technology for chips in semiconductor integrated circuits involves the preparation of millions of transistors on a single-crystal silicon wafer with a diameter of Φ12in (Φ304.8mm). Each transistor is constructed from multiple layers of thin films with different functions, consisting of an active layer, an insulating layer, an isolation layer, and a conductive layer. Each functional layer has its own pattern, so after each layer of functional film is plated, the useless parts need to be etched away with an ion beam, leaving the useful film components intact. Nowadays, the wire width of the chip has reached 7mm, and ion beam etching is necessary to prepare such a fine pattern. Ion beam etching is a dry etching method with high etching accuracy compared to the wet etching method used in the beginning.
Ion beam etching technology with inactive ion beam etching and active ion beam etching with two kinds. The former with argon ion beam etching, belongs to the physical reaction; the latter with fluorine ion beam sputtering, fluorine ion beam in addition to high energy to produce the role of tramp, fluorine ion beam can also be etched with SiO2、Si3N4、GaAs、W and other thin films have a chemical reaction, it is both the physical reaction process, but also the chemical reaction process of the ion beam etching technology, the etching rate is fast. Reaction etching corrosive gases are CF4、C2F6、CCl4、BCl3, etc., the generated reactants for SiF4、SiCl4、GCl3;、and WF6 are corrosive gases are extracted. Ion beam etching technology is the key technology to produce high-tech products.
–This article is released by vacuum coating machine manufacturer Guangdong Zhenhua
Post time: Oct-24-2023