I-ion beam sputtering coating kanye ne-ion beam etching

1. I-ion beam sputtering coating

Ingaphezulu lezinto ezibonakalayo lishaywa ngogongolo lwe-ion olunamandla aphakathi nendawo, futhi amandla ama-ion awangeni ku-crystal lattice wezinto ezibonakalayo, kodwa adlulisele amandla kuma-athomu aqondiwe, awenze ahlakazeke asuke ebusweni bento, bese enza ifilimu elincanyana ngokubeka endaweni yokusebenza. Ngenxa ye-sputtering ekhiqizwa i-ion beam, amandla e-athomu ye-athomu ye-sputtered yefilimu aphakeme kakhulu, futhi into ehlosiwe ihlaselwa nge-ion beam endaweni engenalutho ephezulu, ukuhlanzeka kwesendlalelo sefilimu kuphezulu, futhi amafilimu ekhwalithi ephezulu angafakwa, kuyilapho ukuqina kongqimba lwefilimu ye-ion kuthuthukiswa, okungakwazi ukufeza inhloso ye-optical ungqimba lwefilimu. Inhloso ye-ion beam sputtering ukwakha izinto ezintsha zefilimu ezacile.

2. Ukufakwa kwe-ion beam

I-ion beam etching iphinde ibe ibhomu ye-ion ene-medium-energy ebusweni bento ukuze kukhiqizwe i-sputtering, i-etching effect ku-substrate, iyithuluzi le-semiconductor, amadivaysi e-optoelectronic nezinye izindawo zokukhiqiza ubuchwepheshe obuyinhloko behluzo. Ubuchwepheshe bokulungiselela ama-chips kumasekethe ahlanganisiwe we-semiconductor buhilela ukulungiswa kwezigidi zama-transistors kusicwecwana esiyikristalu ye-silicon enobubanzi obungu-Φ12in (Φ304.8mm). I-transistor ngayinye yakhiwe ngezingqimba eziningi zamafilimu amancane anemisebenzi ehlukene, ehlanganisa ungqimba olusebenzayo, ungqimba oluvikelayo, ungqimba oluhlukanisayo, kanye nongqimba olubambayo. Isendlalelo ngasinye esisebenzayo sinephethini yaso, ngakho-ke ngemva kokuba ungqimba ngalunye lwefilimu esebenzayo lufakwe, izingxenye ezingenamsebenzi zidinga ukuqoshwa nge-ion beam, zishiye izingxenye zefilimu eziwusizo ziphelele. Namuhla, ububanzi bezintambo ze-chip bufinyelele ku-7mm, futhi ukufakwa kwe-ion beam kuyadingeka ukuze kulungiswe iphethini enhle kangaka. Ukufakwa kwe-ion beam kuyindlela eyomile yokuqopha enokunemba okuphezulu kokuqopha uma kuqhathaniswa nendlela yokufaka emanzi esetshenziswe ekuqaleni.

Ubuchwepheshe bokufaka i-ion beam obunomshini wokushumeka we-ion obungasebenzi kanye nokushumeka kwe-ion beam okusebenzayo ngezinhlobo ezimbili. Owokuqala one-argon ion beam etching, ungowokusabela ngokomzimba; eyokugcina ene-fluorine ion beam sputtering, i-fluorine ion beam ngaphezu kwamandla aphezulu ukukhiqiza indima ye-tramp, i-fluorine ion beam nayo ingabhalwa nge-SiO₂, Si₃I-N4, i-GaAs, i-W namanye amafilimu amancanyana anokusabela kwamakhemikhali, kuyinqubo yokusabela ngokomzimba, kodwa futhi inqubo yokusabela kwamakhemikhali yobuchwepheshe be-ion beam etching, izinga lokushaya liyashesha. Amagesi agqwalayo abamba ukusabela yi-CF₄, C₂F₆,CCl4,BCl₃, njll., ama-reactants akhiqiziwe e-SiF₄, SiCl₄, GCl₃;, kanye ne-WF₆ kukhishwa amagesi agqwalayo. Ubuchwepheshe be-Ion beam etching ubuchwepheshe obubalulekile bokukhiqiza imikhiqizo yobuchwepheshe obuphezulu.

-Le ndatshana ikhishwe nguumenzi womshini we-vacuum coatingI-Guangdong Zhenhua