Ukutshiza yinto apho amasuntswana anamandla (adla ngokuba zii-ion zegesi) abethe umphezulu wento eqinileyo (engezantsi ebizwa ngokuba yimathiriyeli ekujoliswe kuyo), ebangela ukuba iiathom (okanye iimolekyuli) kumphezulu wento ekujoliswe kuyo zibaleke kuyo.
Le nto yafunyanwa ngu-Grove ngo-1842 xa izinto ze-cathode zafuduselwa eludongeni lwetyhubhu ye-vacuum ngexesha lovavanyo lokufunda ukubola kwe-cathodic. Le ndlela ye-sputtering kwi-substrate deposition yefilimu ezibhityileyo yafunyanwa ngo-1877, ngenxa yokusebenzisa le ndlela yokubekwa kweefilimu ezibhityileyo kumanqanaba okuqala esantya sokutshiza iphantsi, isantya esicothayo sefilimu, kufuneka simiselwe kwisixhobo soxinzelelo oluphezulu kwaye sidlulele kwigesi echaphazelekileyo kunye nolunye uthotho lweengxaki, ngoko ke uphuhliso lucotha kakhulu kwaye luphantse lupheliswe isinyithi sesinyithi, siphantse sacinywa. i-dielectrics, kunye neekhompawundi zeekhemikhali, izixhobo kwinani elincinci lezicelo. Kuze kube ngoo-1970, ngenxa yokuvela kweteknoloji ye-magnetron sputtering, i-sputtering coating iye yaphuhliswa ngokukhawuleza, yaqala ukungena ekuvuseleleni indlela. Oku kungenxa yokuba indlela ye-magnetron sputtering inokunyanzelwa yintsimi ye-orthogonal electromagnetic kwi-electron, ukwandisa amathuba okungqubana kwee-electron kunye neemolekyuli zegesi, kungekhona nje ukunciphisa amandla ombane okongeziweyo kwi-cathode, kunye nokuphucula isantya sokutshiza kwee-ion ezilungileyo kwi-cathode ekujoliswe kuyo, ukunciphisa amathuba okungqubana kwe-electron kunye nokunciphisa i-elektroni apho ibhombu ephantsi. "isantya esiphezulu, ukushisa okuphantsi Iimpawu ezimbini eziphambili" zesantya esiphezulu kunye nobushushu obuphantsi ".
Ukuya koo-1980, nangona yabonakala iminyaka elishumi elinesibini kuphela, igqamile kwilabhoratri, ngokwenyani ikwindawo yokuveliswa kwemveliso ngobuninzi. Ngophuhliso olongezelelweyo lwezenzululwazi kunye neteknoloji, kwiminyaka yakutshanje kwintsimi ye-sputtering coating kunye nokuqaliswa kwe-ion beam ephuculweyo ye-sputtering, ukusetyenziswa kwe-beam ebanzi yomthombo we-ion wangoku oqinileyo kunye nokumodareyitha kwemagnethi, kunye nokudityaniswa kwe-dipole sputtering eqhelekileyo eyenziwe yindlela entsha yokutshiza; kwaye iya kuba kukwaziswa konikezelo lwamandla lwangoku oluphakathi-frequency etshintshanayo kwi-magnetron sputtering target source. Le teknoloji ye-AC magnetron sputtering ephakathi, ebizwa ngokuba yi-twin target sputtering, ayiphelisi kuphela impembelelo "yokunyamalala" ye-anode, kodwa iphinda isombulule ingxaki "yetyhefu" ye-cathode, ephucula kakhulu ukuzinza kwe-magnetron sputtering, kwaye inika isiseko esiluqilima sokuveliswa kwemveliso yeefilimu ezincinci. Oku kuphucule kakhulu ukuzinza kwe-magnetron sputtering kwaye kwabonelela ngesiseko esiluqilima sokuveliswa kwemveliso yeefilimu ezincinci ezidibeneyo. Kwiminyaka yakutshanje, ukugquma kwe-sputtering kuye kwaba yitekhnoloji eshushu yokulungiselela ifilimu, esebenzayo kwintsimi yetekhnoloji yokucoca i-vacuum.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: Dec-05-2023