Dahaarka ion beam sputtering iyo ion beam etching

1. Ion beam sputtering daahan

Dusha sare ee walaxda waxaa lagu duqeeyaa laydhka tamarta dhexdhexaadka ah ee ion, iyo tamarta ionadu ma galaan qulqulka kristal ee walxaha, laakiin u wareeji tamarta atamka bartilmaameedka ah, taas oo keenaysa in ay ka soo daadiyaan dusha sare ee walxaha, ka dibna samee filim khafiif ah oo ku dhejinaya qalabka shaqada. Sababtoo ah suufka ay soo saarto ion ion, tamarta atomyada lakabka filimka ee la jeexjeexay ayaa aad u sarreeya, iyo walxaha bartilmaameedka ah waxaa lagu qarxiyaa beam ion ee vacuum sare, daahirsanaanta lakabka filimku waa sarreeyaa, filimo tayo sare leh ayaa la dhigi karaa, halka xasilloonida lakabka filimka ion beam la hagaajiyo, taas oo gaari karta ujeedada hagaajinta lakabka muraayadda. Ujeedada laga leeyahay ion beam sputtering waa in la sameeyo qalab filim khafiif ah oo cusub.

2. Ion beam etching

Ion beam etching sidoo kale waa tamar dhexdhexaad ah oo tamarta ion ah oo dusheeda ah oo ka mid ah walxaha si ay u soo saaraan sputtering, saamaynta etching on substrate ah, waa qalab semiconductor ah, qalabka optoelectronic iyo meelaha kale ee wax soo saarka ee garaafyada xudunta u ah technology. Tiknoolajiyada diyaarinta ee chips ee wareegyada isku dhafan ee semiconductor waxay ku lug leedahay diyaarinta malaayiin transistor-ka ah wafer silikoon hal-crystal ah oo leh dhexroor Φ12in (Φ304.8mm). Transistor kasta waxaa laga dhisay lakabyo badan oo filimo khafiif ah oo leh hawlo kala duwan, oo ka kooban lakab firfircoon, lakabka daboolka, lakabka go'doominta, iyo lakabka korantada. Lakab kasta oo shaqeynaya wuxuu leeyahay qaab u gaar ah, markaa ka dib marka lakab kasta oo filim ah oo shaqeynaya la dhejiyo, qaybaha aan waxtarka lahayn waxay u baahan yihiin in lagu dhajiyo ion ion, taasoo ka tagaysa qaybaha filimka waxtarka leh. Maalmahan, ballaca siliggu wuxuu gaadhay 7mm, iyo ion beam etching waa lagama maarmaan si loo diyaariyo qaab wanaagsan. Ion beam etching waa hab qallalan oo leh saxnaansho sare oo sax ah marka la barbar dhigo habka qoyan ee etching loo isticmaalo bilowgii.

Tignoolajiyada Ion beam etching oo leh alwaax ilbax ah oo aan firfircoonayn iyo ion beam etching oo firfircoon oo leh laba nooc. Kan hore ee leh argon ion beam etching, ayaa iska leh falcelinta jirka; kan dambe oo leh fluorine ion beam sputtering, fluorine ion beam marka lagu daro tamar sare si loo soo saaro doorka taraamka, ilayska fluorine sidoo kale waxaa lagu dhejin karaa SiO₂Si₃N4, GaAs, W iyo filimada kale ee khafiifka ah waxay leeyihiin falcelin kiimikaad, waa labadaba habka falcelinta jirka, laakiin sidoo kale habka falcelinta kiimikada ee tignoolajiyada ion beam etching technology, heerka etching waa mid degdeg ah. Falcelinta gaasaska daxalka ah waa CF₄C₂F₆CCl4, BCl₃iwm., falceliyeyaasha la soo saaray ee SiF₄SiCl₄GCl₃iyo WF₆ waa gaas daxalaysan ayaa laga soo saaraa. Ion beam etching technology waa tignoolajiyada ugu muhiimsan ee lagu soo saaro alaabada tignoolajiyada sare.

–Maqaalkan waxa soo saaraysoo saaraha mashiinka daahan vacuumGuangdong Zhenhua