1. Ion doo sputtering mkpuchi
A na-ekpuchi elu nke ihe ahụ site na ion ọkụ na-ajụ-ike, na ike nke ions adịghị abanye n'ime kristal kristal nke ihe ahụ, ma nyefee ike na atom ndị a na-achọsi ike, na-eme ka ha gbasaa n'elu ihe ahụ, wee mepụta ihe nkiri dị mkpa site na ntinye na workpiece. N'ihi sputtering nke ion beam na-emepụta, ike nke sputtered film oyi akwa atom dị nnọọ elu, na lekwasịrị ihe onwunwe bombarded na ion beam na a elu agụụ, ịdị ọcha nke ihe nkiri oyi akwa dị elu, na elu àgwà fim nwere ike idobe, mgbe kwụsie ike nke ion beam film oyi akwa na-mma, nke nwere ike nweta nzube nke imezi ihe nkiri oyi akwa na optical. Ebumnuche nke ion beam sputtering bụ ịmepụta ihe nkiri ọhụrụ dị mkpa.
2. Ion beam etching
Ion beam etching bụkwa a ọkara-ike ion beam bombardment nke elu nke ihe na-emepụta sputtering, etching mmetụta na mkpụrụ, bụ a semiconductor ngwaọrụ, optoelectronic ngwaọrụ na ndị ọzọ na akụkụ nke mmepụta nke ndịna-emeputa isi technology. Teknụzụ nkwadebe maka ibe na sekit agbakwunyere semiconductor gụnyere nkwadebe nke nde transistor na otu silicon wafer nke nwere dayameta nke Φ12in (Φ304.8mm). A na-ewu transistor ọ bụla site na ọtụtụ fim ndị dị mkpa nwere ọrụ dị iche iche, nke nwere oyi akwa na-arụ ọrụ, oyi akwa mkpuchi, oyi akwa dịpụrụ adịpụ, na oyi akwa na-eduzi. Onye ọ bụla na-arụ ọrụ na-arụ ọrụ nwere ụkpụrụ nke ya, ya mere, mgbe oyi akwa ọ bụla nke ihe nkiri na-arụ ọrụ na-ekpuchi, ọ dị mkpa ka a kpochapụ akụkụ ndị na-abaghị uru na ion beam, na-ahapụ ihe nkiri ihe nkiri bara uru. N'oge a, obosara waya nke mgbawa ahụ erutela 7mm, na ion beam etching dị mkpa iji dozie ụkpụrụ dị mma. Ion beam etching bụ usoro etching akọrọ nke nwere ezigbo etching dị elu ma e jiri ya tụnyere usoro etching mmiri ejiri na mbido.
Teknụzụ ion beam etching nwere ion beam etching na-adịghị arụ ọrụ yana ion beam etching nwere ụdị abụọ. Nke mbụ nwere argon ion beam etching, bụ nke mmeghachi omume anụ ahụ; Nke ikpeazụ na fluorine ion beam sputtering, fluorine ion beam na mgbakwunye na ike dị elu iji mepụta ọrụ nke tramp, fluorine ion beam nwekwara ike iji SiO tinye ya.2,Si3N4, GaAs, W na ndị ọzọ na mkpa fim nwere chemical mmeghachi omume, ọ bụ ma anụ ahụ mmeghachi omume usoro, kamakwa chemical mmeghachi omume usoro nke ion doo etching technology, na etching ọnụego bụ ngwa ngwa. Mmeghachi omume etching gas na-emebi emebi bụ CF4,C2F6CCl4, BCl3, wdg, ndị na-emeghachi omume maka SiF4SiCl4GCl3;, na WF6 bụ ikuku na-emebi emebi na-ewepụta. Teknụzụ ion beam etching bụ teknụzụ bụ isi iji mepụta ngwaahịa teknụzụ dị elu.
–E wepụtara akụkọ aonye na-emepụta igwe mkpuchi ikukuGuangdong Zhenhua
Oge nzipu: Ọktoba 24-2023

