1. Ion katako sputtering shafi
A saman kayan an bombarded tare da matsakaici-makamashi ion katako, da kuma makamashi na ions ba su shiga cikin crystal lattice na kayan, amma canja wurin makamashi zuwa ga manufa atom, sa su sputter daga saman kayan, sa'an nan samar da wani bakin ciki fim ta hanyar sakawa a kan workpiece. Saboda sputtering samar da ion katako, da makamashi na sputtered film Layer atoms ne sosai high, da manufa abu da aka bombarded tare da ion katako a cikin wani babban injin, da tsarki na fim Layer ne high, da high quality fina-finai za a iya ajiye, yayin da kwanciyar hankali na ion katako fim Layer aka inganta, wanda zai iya cimma manufar inganta fim Layer da kayan aikin injiniya. Manufar ion katako sputtering shine don samar da sababbin kayan fim na bakin ciki.
2. Ion beam etching
Ion beam etching shine madaidaicin ƙarfin ion katako bombardment na saman kayan don samar da sputtering, etching sakamako a kan substrate, wani semiconductor na'urar, optoelectronic na'urorin da sauran yankunan samar da graphics core fasaha. Fasahar shirye-shirye don kwakwalwan kwamfuta a cikin haɗaɗɗun da'irori na semiconductor sun haɗa da shirye-shiryen miliyoyin transistor akan wafer silicon-crystal guda ɗaya tare da diamita na Φ12in (Φ304.8mm). Kowane transistor an gina shi daga nau'ikan fina-finai na bakin ciki masu yawa tare da ayyuka daban-daban, wanda ya ƙunshi Layer mai aiki, Layer insulating, Layer keɓewa, da Layer conductive. Kowane Layer na aiki yana da nasa tsarin, don haka bayan kowane Layer na fim ɗin da aka ɗora, sassan da ba su da amfani suna buƙatar cirewa tare da katako na ion, barin kayan aikin fim masu amfani. A zamanin yau, girman waya na guntu ya kai 7mm, kuma ion beam etching ya zama dole don shirya irin wannan kyakkyawan tsari. Ion beam etching hanya ce mai bushewa tare da daidaitaccen etching idan aka kwatanta da rigar etching hanyar da aka yi amfani da ita a farkon.
Ion beam etching fasahar tare da mara aiki ion katako etching da kuma aiki ion katako etching tare da iri biyu. Tsohon tare da argon ion beam etching, nasa ne na jiki; na karshen tare da fluorine ion beam sputtering, fluorine ion beam ban da babban makamashi don samar da rawar tarko, fluorine ion beam kuma za a iya kama shi da SiO.2, Si3N4, GaAs, W da sauran bakin ciki fina-finai da wani sinadaran dauki, shi ne duka jiki dauki tsari, amma kuma da sinadaran dauki tsari na ion katako etching fasahar, da etching kudi ne sauri. Reaction etching iskar gas sune CF4,C2F6CCl4, BCl3, da sauransu, abubuwan da aka haifar don SiF4,SiCl4GCl ku3;, da WF6 ana fitar da iskar gas masu lalata. Ion beam etching fasahar ita ce mabuɗin fasaha don samar da samfuran fasaha.
–An fitar da wannan labarininjin shafa injin injinGuangdong Zhenhua
Lokacin aikawa: Oktoba-24-2023

