Izici ze-magnetron sputtering coating
(3) Ukuphalaza kwamandla aphansi. Ngenxa ye-voltage ephansi ye-cathode esetshenziswa kokuhlosiwe, i-plasma iboshwe yizibuthe esikhaleni esiseduze ne-cathode, ngaleyo ndlela ivimbele izinhlayiya ezishajwa ngamandla ohlangothini lwabantu abadutshulwe be-substrate. Ngakho-ke, izinga lomonakalo ku-substrate njengamadivayisi we-semiconductor obangelwa ukuqhuma kwezinhlayiyana ezikhokhisiwe liphansi kunalelo elibangelwa ezinye izindlela zokufafaza.
(4) Izinga lokushisa eliphansi le-substrate. Izinga lokufafaza kwe-Magnetron liphezulu, ngoba i-cathode target endaweni kazibuthe ngaphakathi kwesifunda, okungukuthi, umzila wokugeleza ohlosiwe ongaphakathi kwendawo encane yendawo yokugxilisa i-electron liphezulu, kuyilapho umphumela kazibuthe ngaphandle kwesifunda, ikakhulukazi kude nenkundla kazibuthe ye-substrate surface eseduze, ukugxiliswa kwe-electron ngenxa yokuhlakazeka kwe-dipoca ephansi kakhulu, futhi ingase ibe ngisho nomehluko we-dipole. ingcindezi yegesi yokusebenza ye-oda lobukhulu). Ngakho-ke, ngaphansi kwezimo ze-magnetron sputtering, ukuhlangana kwama-electron aqhuma ibhomu ebusweni be-substrate kuphansi kakhulu kunalokho okujwayelekile kwe-diode sputtering, futhi ukwanda ngokweqile kwezinga lokushisa elingaphansi kwe-substrate kugwenywa ngenxa yokuncipha kwenani lesigameko sama-electron ku-substrate. Ngaphezu kwalokho, ku-magnetron sputtering indlela, i-anode yedivayisi ye-magnetron sputtering ingatholakala eduze kwendawo ye-cathode, futhi umnikazi we-substrate angase angagxiliwe futhi abe namandla okumiswa, ukuze ama-electron angeke adlule umbambi we-substrate osekelwe phansi futhi ageleze kude nge-anode, ngaleyo ndlela enze ipuleti elinciphisa amandla e-substrate linciphise i-substrate ye-electron encishisiwe. ukushisa okubangelwa ama-electron, futhi kunciphisa kakhulu ukuqhuma kwe-electron yesibili ye-substrate okuholela ekukhiqizeni ukushisa.
(5) Ukulinganisa okungalingani kwethagethi. Ku-target yendabuko ye-magnetron sputtering, ukusetshenziswa kwensimu kazibuthe engalingani, ngakho-ke i-plasma izokhiqiza umphumela wokuhlangana kwendawo, izokwenza okuhlosiwe endaweni yendawo yezinga lokucwilisa i-sputtering libe lihle, umphumela uba ukuthi ilitshe lizokhiqiza ukushuba okuphawulekayo okungalingani. Izinga lokusebenzisa okuhlosiwe ngokuvamile libalelwa ku-30%. Ukuze uthuthukise izinga lokusetshenziswa kwezinto ezihlosiwe, ungathatha izinyathelo zokuthuthukisa ezihlukahlukene, njengokuthuthukisa ukuma nokusabalalisa inkambu kazibuthe eqondiwe, ukuze uzibuthe ku-target cathode ukunyakaza kwangaphakathi nokunye.
Ubunzima bokukhipha okuhlosiwe okubalulekile kazibuthe. Uma i-sputtering target yenziwe ngezinto ezinokungena kazibuthe okuphezulu, imigqa kazibuthe yamandla izodlula ngqo ngaphakathi kwendawo eqondiwe ukuze kwenzeke intokazi kazibuthe ye-short-circuit, ngaleyo ndlela yenze ukukhishwa kwe-magnetron kube nzima. Ukuze kukhiqizwe inkambu kazibuthe yesikhala, abantu benze izifundo eziningi, ngokwesibonelo, ukuze kugcwaliswe insimu kazibuthe ngaphakathi kwempahla eqondiwe, kushiye izikhala eziningi kulokho okuhlosiwe ukuze kuthuthukiswe ukuvuza okwengeziwe kwezinga lokushisa eliqondiwe kazibuthe, noma ukunciphisa amandla kazibuthe wento ehlosiwe.
-Le ndatshana ikhishwe nguumenzi womshini we-vacuum coatingI-Guangdong Zhenhua
Isikhathi sokuthumela: Dec-01-2023