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Cov yam ntxwv ntawm magnetron sputtering txheej Tshooj 2

Tsab xov xwm qhov chaw: Zhenhua lub tshuab nqus tsev
Nyeem: 10
Luam tawm: 23-12-01

Cov yam ntxwv ntawm magnetron sputtering txheej

(3) Lub zog qis sputtering. Vim yog qhov cathode voltage qis siv rau lub hom phiaj, cov plasma raug khi los ntawm lub zog sib nqus hauv qhov chaw ze ntawm cathode, yog li ntawd inhibit cov khoom me me uas muaj zog siab mus rau sab ntawm lub substrate uas tib neeg tua. Yog li ntawd, qib kev puas tsuaj rau lub substrate xws li cov khoom siv semiconductor uas tshwm sim los ntawm kev foob pob hluav taws xob tsawg dua li qhov tshwm sim los ntawm lwm txoj kev sputtering.

Cov duab 20231201111637

(4) Qhov kub ntawm lub substrate qis. Magnetron sputtering sputtering rate siab, vim tias lub cathode target nyob rau hauv lub magnetic field hauv thaj tsam, uas yog, lub hom phiaj tso tawm hauv thaj chaw me me ntawm qhov concentration ntawm electron siab, thaum nyob rau hauv cov nyhuv magnetic sab nraum thaj tsam, tshwj xeeb tshaj yog deb ntawm lub magnetic field ntawm lub substrate nto ze, qhov concentration ntawm electron vim yog qhov dispersion ntawm qis dua, thiab tej zaum yuav qis dua li dipole sputtering (vim qhov sib txawv ntawm ob lub siab ua haujlwm ntawm ib qho kev txiav txim ntawm qhov loj). Yog li ntawd, nyob rau hauv magnetron sputtering tej yam kev mob, qhov concentration ntawm electrons bombarding ntawm qhov chaw ntawm lub substrate yog qis dua li ntawm diode sputtering, thiab qhov nce ntxiv ntawm qhov kub ntawm lub substrate yog zam vim qhov txo qis ntawm cov electrons tshwm sim ntawm lub substrate. Ntxiv mus, nyob rau hauv txoj kev magnetron sputtering, lub anode ntawm lub magnetron sputtering ntaus ntawv tuaj yeem nyob ib puag ncig cathode ze, thiab lub substrate tuav kuj tuaj yeem tsis muaj av thiab nyob rau hauv lub peev xwm ncua, yog li cov electrons yuav tsis hla dhau lub substrate tuav thiab ntws tawm ntawm anode, yog li ua rau cov electrons muaj zog siab bombarding lub plated substrate txo qis, txo qhov nce ntawm substrate cua sov los ntawm cov electrons, thiab ua rau lub secondary electron bombardment ntawm lub substrate ua rau lub cua sov tsim.

(5) Kev txiav tsis sib npaug ntawm lub hom phiaj. Hauv cov hom phiaj magnetron sputtering ib txwm muaj, kev siv lub zog sib nqus tsis sib npaug, yog li cov plasma yuav tsim cov nyhuv sib sau ua ke hauv zos, yuav ua rau lub hom phiaj ntawm qhov chaw hauv zos ntawm qhov kev txiav sputtering etching tus nqi zoo heev, qhov tshwm sim yog tias lub hom phiaj yuav tsim cov kev txiav tsis sib npaug tseem ceeb. Tus nqi siv ntawm lub hom phiaj feem ntau yog li 30%. Yuav kom txhim kho tus nqi siv ntawm cov khoom siv hom phiaj, koj tuaj yeem siv ntau yam kev ntsuas txhim kho, xws li txhim kho cov duab thiab kev faib tawm ntawm lub hom phiaj sib nqus, yog li ntawd cov hlau nplaum hauv lub hom phiaj cathode sab hauv txav mus los thiab lwm yam.

Nyuaj rau kev siv cov khoom siv hlau nplaum sputtering. Yog tias lub hom phiaj sputtering yog ua los ntawm cov khoom siv uas muaj cov khoom siv hlau nplaum permeability siab, cov kab hlau nplaum ntawm lub zog yuav hla ncaj qha los ntawm sab hauv ntawm lub hom phiaj kom tshwm sim qhov xwm txheej luv luv ntawm hlau nplaum, yog li ua rau kev tso tawm magnetron nyuaj. Txhawm rau tsim kom muaj lub zog magnetic hauv qhov chaw, tib neeg tau ua ntau yam kev tshawb fawb, piv txwv li, kom saturate lub zog magnetic hauv cov khoom siv hom phiaj, tawm ntau qhov sib txawv hauv lub hom phiaj los txhawb kev tsim cov dej ntws ntau dua ntawm lub hom phiaj kub nce, lossis kom txo qhov permeability ntawm cov khoom siv hom phiaj.

– Tsab xov xwm no yog tso tawm los ntawmlub tshuab nqus tsev txheej tshuab chaw tsim khoomGuangdong Zhenhua


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