Iimpawu ze-magnetron sputtering coating
(3) Ukutshiza amandla aphantsi. Ngenxa ye-voltage ephantsi ye-cathode esetyenziswa kwindawo ekujoliswe kuyo, i-plasma ibotshelelwe yi-magnetic field kwindawo ekufutshane ne-cathode, ngaloo ndlela ithintela amasuntswana atshajiweyo aphezulu kwicala le-substrate abantu abadutyulwayo. Ke ngoko, inqanaba lomonakalo kwi-substrate efana nezixhobo ze-semiconductor ezibangelwa kukuqhushumba kwamasuntswana atshajiweyo liphantsi kunelo libangelwa zezinye iindlela zokutshiza.
(4) Ubushushu obuphantsi be-substrate. Izinga lokutshiza nge-magnetron liphezulu, kuba ithagethi ye-cathode kwintsimi ye-magnetic ngaphakathi kommandla, oko kukuthi, indlela yokukhupha i-target ngaphakathi kwendawo encinci yendawo yoxinzelelo lwe-electron iphezulu, ngelixa kwisiphumo se-magnetic ngaphandle kommandla, ngakumbi kude nentsimi ye-magnetic yomphezulu we-substrate ekufutshane, uxinzelelo lwe-electron ngenxa yokusasazeka kwe-substrate esezantsi kakhulu, kwaye lunokuba ngaphantsi kune-dipole sputtering (ngenxa yomahluko phakathi koxinzelelo lwegesi olusebenzayo olubini lomyalelo wobukhulu). Ke ngoko, phantsi kweemeko zokutshiza nge-magnetron, uxinzelelo lwee-electron ezihlasela umphezulu we-substrate luphantsi kakhulu kunolo lwe-diode sputtering eqhelekileyo, kwaye ukunyuka okugqithisileyo kobushushu be-substrate kuyathintelwa ngenxa yokunciphisa inani lee-electron ezenzeka kwi-substrate. Ukongeza, kwindlela yokutshiza i-magnetron, i-anode yesixhobo sokutshiza i-magnetron inokubekwa kufutshane ne-cathode, kwaye isibambi se-substrate sinokuvulwa kwaye sibe kwi-suspension potential, ukuze ii-electron zingadluli kwi-substrate holder esekwe phantsi zize zihambe nge-anode, ngaloo ndlela zenze ii-electron ezinamandla aphezulu eziqhuma kwi-substrate ebekwe phantsi zinciphe, zinciphise ukwanda kobushushu be-substrate obubangelwa zii-electron, kwaye zinciphise kakhulu ukuqhushumba kwe-electron yesibini ye-substrate okubangela ukuveliswa kobushushu.
(5) Ukugrumba okungalinganiyo kwethagethi. Kwithagethi yesiqhelo yokugrumba kwemagnetron, ukusetyenziswa kwentsimi yemagnethi engalinganiyo, ukuze iplasma ivelise isiphumo sokudibana kwendawo, kuya kwenza ithagethi kwindawo yendawo yesantya sokugrumba sokugrumba sikhulu, isiphumo kukuba ithagethi iya kuvelisa ukugrumba okungalinganiyo okubalulekileyo. Izinga lokusetyenziswa kwethagethi ngokubanzi limalunga nama-30%. Ukuze uphucule izinga lokusetyenziswa kwezinto ekujoliswe kuzo, ungathatha amanyathelo ahlukeneyo okuphucula, njengokuphucula imo kunye nokusasazwa kwentsimi yemagnethi ekujoliswe kuyo, ukuze imagnethi ekujoliswe kuyo ikwazi ukugrumba intshukumo yangaphakathi njalo njalo.
Ubunzima ekutshizeni iithagethi zezinto zemagnethi. Ukuba ithagethi yokutshiza yenziwe ngezinto ezinomphetho ophezulu wemagnethi, imigca yamandla emagnethi iya kudlula ngqo ngaphakathi kwethagethi ukuze kwenzeke isiganeko se-magnetic short-circuit, ngaloo ndlela yenza kube nzima ukukhupha imagnethi. Ukuze kuveliswe i-magnetic field yesithuba, abantu benze izifundo ezahlukeneyo, umzekelo, ukugcwala i-magnetic field ngaphakathi kwezinto ezijoliswe kuzo, beshiya izikhewu ezininzi kwithagethi ukukhuthaza ukuvuza okungakumbi kokunyuka kobushushu be-magnetic target, okanye ukunciphisa umphetho wemagnethi wezinto ezijoliswe kuzo.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha lokuthumela: Disemba-01-2023