Iimpawu zemagnetron sputtering coating
(3) Ukutshiza kwamandla aphantsi. Ngenxa yombane ophantsi we-cathode osetyenzisiweyo kwithagethi, i-plasma ibotshelelwe yintsimi yamagnetic kwindawo ekufutshane ne-cathode, ngaloo ndlela inqanda amasuntswana ahlawuliswa amandla aphezulu kwicala le-substrate abantu abadubule. Ngoko ke, iqondo lomonakalo kwi-substrate efana nezixhobo ze-semiconductor ezibangelwa yi-particle bombardment ehlawulisiweyo iphantsi kunokuba ibangelwa ezinye iindlela zokutshiza.
(4) Ubushushu be-substrate ephantsi. I-Magnetron sputtering iqondo lokutshiza liphezulu, ngenxa yokuba i-cathode ekujoliswe kuyo kumhlaba wemagnethi ngaphakathi kommandla, oko kukuthi, umgaqo weenqwelo-moya ekujoliswe kuwo ngaphakathi kwendawo encinci yendawo yoxinaniso lwe-electron iphezulu, ngelixa impembelelo yemagnethi ngaphandle kommandla, ngakumbi kude kumhlaba wemagnethi womphezulu we-substrate ekufuphi, ugxininiso lwe-electron ngenxa yokusasazwa kwe-elektroni esezantsi kakhulu kune-putter esezantsi kakhulu, kwaye inokuba yi-dipolese esezantsi kakhulu, kwaye inokuba yi-dipolese esezantsi kakhulu uxinzelelo lwegesi olusebenzayo lomyalelo wobungakanani). Ke ngoko, phantsi kweemeko zokutshiza kwe-magnetron, ukuxinana kwee-electron ezibetha umphezulu we-substrate kuphantsi kakhulu kunoko kutshiza kwe-diode eqhelekileyo, kwaye ukonyuka okugqithisileyo kobushushu be-substrate kuthintelwa ngenxa yokuncipha kwesehlo se-electron kwi-substrate. Ukongeza, kwindlela ye-magnetron sputtering, i-anode yesixhobo sokuphalaza i-anode inokufumaneka kufutshane nendawo ye-cathode, kwaye umnini we-substrate unokungahlatywa phantsi kwaye axhonywe, ukuze ii-electron zingadluli kwisibambi se-substrate esisezantsi kwaye zigeleze kude nge-anode, ngaloo ndlela zenza i-substrate ye-elektroni inciphise i-substrate ye-substrate encitshisiweyo. ubushushu obubangelwa yi-electron, kwaye kunciphisa kakhulu i-electron bombardment yesibini ye-substrate ekhokelela kwisizukulwana sobushushu.
(5) Ukulinganisa ngokulinganayo koko kujoliswe kuko. Kwithagethi yemveli ye-magnetron sputtering, ukusetyenziswa kwentsimi kazibuthe engalinganiyo, ngoko iplasma iya kuvelisa isiphumo sendawo yokudibanisa, iya kwenza ujoliso kwindawo yendawo yesantya se-sputtering etching inkulu, isiphumo kukuba ithagethi iya kuvelisa i-etching engalinganiyo ebalulekileyo. Izinga lokusetyenziswa koko kujoliswe kuko lihlala limalunga nama-30%. Ukuze kuphuculwe izinga lokusetyenziswa kwezinto ezijoliswe kuyo, unokuthatha amanyathelo ahlukeneyo okuphucula, njengokuphucula imilo kunye nokuhanjiswa kwentsimi yamagnetic ekujoliswe kuyo, ukwenzela ukuba imagnethi kwi-target cathode intshukumo yangaphakathi kunye nokunye.
Ubunzima bokutshiza iithagethi zezinto ezibonakalayo. Ukuba i-sputtering target yenziwe ngesixhobo esinokungena kwimagnethi ephezulu, iintambo zemagnethi zamandla ziya kudlula ngokuthe ngqo kumbindi wethagethi ukuze kwenzeke isenzeko semagnethi esifutshane, oko kwenza ukuba kube nzima ukukhupha imagnetron. Ukuze kuveliswe indawo yemagnethi, abantu baye baqhuba izifundo ezahlukeneyo, umzekelo, ukuzalisa umhlaba wemagnethi ngaphakathi kwinto ekujoliswe kuyo, ukushiya izikhewu ezininzi ekujoliswe kuzo ukukhuthaza ukuveliswa kokuvuza okungaphezulu kokunyuka kobushushu obujoliswe ngumagnethi, okanye ukunciphisa ukufikeleleka kwemagnethi kwinto ekujoliswe kuyo.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: Dec-01-2023