Cov yam ntxwv ntawm magnetron sputtering txheej
(3) Tsawg zog sputtering. Vim yog qhov tsawg cathode voltage thov rau lub hom phiaj, lub plasma yog khi los ntawm magnetic teb nyob rau hauv qhov chaw nyob ze ntawm lub cathode, yog li inhibiting lub high-zog nqi hais mus rau sab ntawm lub substrate neeg tua. Yog li ntawd, qhov kev puas tsuaj rau lub substrate xws li cov khoom siv semiconductor tshwm sim los ntawm kev foob pob tawg yog qis dua qhov tshwm sim los ntawm lwm txoj kev sputtering.
(4) Tsawg substrate kub. Magnetron sputtering sputtering tus nqi yog siab, vim hais tias lub hom phiaj cathode nyob rau hauv magnetic teb nyob rau hauv lub cheeb tsam, uas yog, lub hom phiaj tso tawm khiav nyob rau hauv ib tug me me cheeb tsam ntawm lub electron concentration yog siab, thaum nyob rau hauv lub sib nqus nyhuv nyob rau hauv lub cheeb tsam, tshwj xeeb tshaj yog nyob deb ntawm lub magnetic teb ntawm lub substrate nto nyob ze, lub electron concentration vim dispersion ntawm qhov qis dua, thiab tej zaum yuav txawm tias qhov sib txawv ntawm qhov sib txawv ntawm qhov sib txawv ntawm cov pa roj. ntawm qhov kev txiav txim ntawm qhov loj). Yog li ntawd, nyob rau hauv magnetron sputtering tej yam kev mob, lub concentration ntawm electrons bombarding lub nto ntawm lub substrate yog ntau qis tshaj li qhov zoo tib yam diode sputtering, thiab ib tug ntau heev nce nyob rau hauv lub substrate kub yog zam vim txo tus naj npawb ntawm electrons tshwm sim nyob rau hauv lub substrate. Nyob rau hauv tas li ntawd, nyob rau hauv lub magnetron sputtering txoj kev, lub anode ntawm lub magnetron sputtering ntaus ntawv yuav nyob ib ncig ntawm lub cathode ib puag ncig, thiab lub substrate tuav kuj yuav ungrounded thiab nyob rau hauv ncua kev kawm ntawv muaj peev xwm, thiaj li hais tias cov electrons yuav tsis dhau los ntawm lub hauv av substrate yas dhos thiab ntws tawm los ntawm lub anode, yog li ua rau lub high-zog electrons substrate los ntawm kev txo cov hluav taws xob substrate. electrons, thiab zoo heev attenuating lub thib ob electron bombardment ntawm lub substrate uas ua rau lub tshav kub tiam.
(5) Uneven etching ntawm lub hom phiaj. Nyob rau hauv cov tsoos magnetron sputtering lub hom phiaj, kev siv ntawm ib tug tsis sib luag magnetic teb, yog li cov plasma yuav tsim ib tug convergence hauv zos nyhuv, yuav ua rau lub hom phiaj ntawm lub zos txoj hauj lwm ntawm sputtering etching tus nqi yog zoo, qhov tshwm sim yog hais tias lub hom phiaj yuav tsim ib tug tseem ceeb uneven etching. Kev siv tus nqi ntawm lub hom phiaj feem ntau yog kwv yees li 30%. Txhawm rau txhim kho qhov kev siv ntawm cov khoom siv lub hom phiaj, koj tuaj yeem siv ntau yam kev txhim kho, xws li kev txhim kho cov duab thiab kev faib tawm ntawm lub hom phiaj sib nqus, kom cov hlau nplaum hauv lub hom phiaj cathode sab hauv thiab lwm yam.
Nyuaj hauv sputtering magnetic cov hom phiaj. Yog hais tias lub hom phiaj sputtering yog ua los ntawm cov khoom uas muaj siab sib nqus permeability, cov kab sib nqus ntawm lub zog yuav dhau mus ncaj qha los ntawm sab hauv ntawm lub hom phiaj kom tshwm sim ntawm qhov sib nqus luv-circuit, yog li ua rau magnetron tawm nyuaj. Txhawm rau tsim kom muaj qhov chaw sib nqus qhov chaw, tib neeg tau ua ntau yam kev tshawb fawb, piv txwv li, kom saturate lub magnetic teb nyob rau hauv lub hom phiaj cov ntaub ntawv, tawm ntau qhov sib txawv nyob rau hauv lub hom phiaj los txhawb lub tiam ntawm ntau leakage ntawm magnetic lub hom phiaj kub nce, los yog txo cov magnetic permeability ntawm lub hom phiaj cov khoom.
– Zaj lus no yog tso tawm los ntawmtshuab nqus tsev txheej tshuab manufacturersGuangdong Zhenhua
Post lub sij hawm: Dec-01-2023