Babban fasalin hanyar fitar da iskar gas don adana fina-finai shine yawan ajiyar iska. Babban fasalin hanyar fitar da iskar gas shine nau'ikan kayan fim da ake da su da kuma daidaiton yanayin fim ɗin, amma ƙimar ajiyar iskar gas ba ta da yawa. Rufin ion hanya ce da ke haɗa waɗannan hanyoyin guda biyu.
Ka'idar shafi na ion da yanayin samuwar fim
An nuna ƙa'idar aiki ta shafa ion a cikin Hoton. Ana tura ɗakin injin zuwa matsin lamba ƙasa da 10-4 Pa, sannan a cika shi da iskar gas mara aiki (misali argon) zuwa matsin lamba na 0.1~1 Pa. Bayan an shafa ƙarfin DC mara kyau na har zuwa 5 kV a kan substrate, ana kafa yankin fitar da iskar gas mai ƙarancin matsin lamba tsakanin substrate da crucible. Ana hanzarta ions na iskar gas mara aiki ta hanyar filin lantarki kuma ana jefa bam a saman substrate, don haka ana tsaftace saman workpiece. Bayan an kammala wannan aikin tsaftacewa, tsarin rufewa yana farawa da tururin kayan da za a shafa a cikin crucible. Barbashin tururin da aka turo suna shiga yankin plasma kuma suna karo da ions da electrons marasa aiki da ba su da alaƙa, kuma wasu barbashin tururin suna wargajewa kuma suna jefa bam a kan workpiece da saman rufi a ƙarƙashin hanzarin filin lantarki. A cikin tsarin plating na ion, ba wai kawai akwai ajiya ba, har ma da sputtering na ions masu kyau akan substrate, don haka siririn fim ɗin zai iya samuwa ne kawai lokacin da tasirin ajiya ya fi tasirin sputtering girma.
Tsarin shafa ion, wanda a koyaushe ake jefa substrate da ions masu ƙarfi, yana da tsafta sosai kuma yana da fa'idodi da yawa idan aka kwatanta da shafa sputtering da evaporation.
(1) Mannewa mai ƙarfi, Layer ɗin shafi ba ya bazuwa cikin sauƙi.
(a) A cikin tsarin shafa ion, ana amfani da adadi mai yawa na barbashi masu ƙarfi da fitar da haske ke samarwa don samar da tasirin sputtering na cathodic akan saman substrate, fesawa da tsaftace iskar gas da mai da ke sha a saman substrate don tsarkake saman substrate har sai an kammala dukkan aikin rufewa.
(b) A farkon matakin rufewa, sputtering da deposition suna haɗuwa, wanda zai iya samar da wani tsari na canzawa na abubuwan da ke cikin haɗin tushen fim ɗin ko cakuda kayan fim da kayan tushe, wanda ake kira "pseudo-diffusion layer", wanda zai iya inganta aikin mannewa na fim ɗin yadda ya kamata.
(2) Kyakkyawan halaye na rufewa. Dalili ɗaya shine cewa ƙwayoyin halitta na kayan shafa suna yin ion a ƙarƙashin matsin lamba mai yawa kuma suna karo da ƙwayoyin iskar gas sau da yawa yayin aiwatar da isa ga substrate, ta yadda ions na kayan shafa za a iya warwatse a kusa da substrate. Bugu da ƙari, ƙwayoyin halitta na kayan shafa na ionized suna ajiyewa a saman substrate a ƙarƙashin aikin filin lantarki, don haka dukkan substrate ɗin an ajiye su da siririn fim, amma rufin evaporation ba zai iya cimma wannan tasirin ba.
(3) Ingancin murfin ya faru ne saboda yawan danshi da ke fitowa daga cikin iskar oxygen da ke shiga cikin fim ɗin da aka ajiye tare da ions masu kyau, wanda ke inganta yawan danshi.
(4) Za a iya shafa nau'ikan kayan shafa da substrates iri-iri akan kayan ƙarfe ko waɗanda ba na ƙarfe ba.
(5) Idan aka kwatanta da wurin ajiye tururin sinadarai (CVD), yana da ƙarancin zafin substrate, yawanci ƙasa da 500°C, amma ƙarfin mannewarsa yayi daidai da fim ɗin ajiye tururin sinadarai.
(6) Yawan adanawa mai yawa, saurin samar da fim, kuma yana iya rufe kauri daga dubunnan nanometers zuwa microns.
Rashin kyawun murfin ion sune: ba za a iya sarrafa kauri na fim ɗin daidai ba; yawan lahani yana da yawa lokacin da ake buƙatar rufewa mai kyau; kuma iskar gas za ta shiga saman yayin rufewa, wanda zai canza halayen saman. A wasu lokuta, ana samun ramuka da ƙwayoyin cuta (ƙasa da 1 nm).
Dangane da yawan ajiyar ion, rufin ion yana kama da hanyar ƙafewa. Dangane da ingancin fim ɗin, fina-finan da aka samar da murfin ion sun kusa ko sun fi waɗanda aka shirya ta hanyar fesawa.
Lokacin Saƙo: Nuwamba-08-2022