Isalathiso sophuhliso lwetekhnoloji ye-crystalline yesilicon cell lukwabandakanya itekhnoloji ye-PERT kunye netekhnoloji ye-Topcon, ezi teknoloji zimbini zithathwa njengokwandiswa kwendlela yokusasaza itekhnoloji yeseli, iimpawu zabo eziqhelekileyo zingumaleko wokudlula kwicala elingasemva leseli, kwaye zombini zisebenzisa umaleko we-silicon ye-doped njengentsimi yangasemva, isikolo sisetyenziswa ikakhulu kubushushu obuphezulu bobushushu obuphezulu kwindlela ye-silicon oxidized kwindlela ye-silicon esetyenziswayo kunye ne-silicon. I-PECVD, njl. I-PECVD ye-Tubular kunye ne-Tubular PECVD kunye ne-flat plate PECVD isetyenziswe kwimveliso yobuninzi beeseli ze-PERC.
I-PECVD yeTubula inomthamo omkhulu kwaye ithatha ngokubanzi unikezelo lwamandla olwenziwa ngamaxesha asezantsi amashumi aliqela e-kHz. I-bombardment ye-ion kunye neengxaki ze-bypass plating zinokuchaphazela umgangatho we-passivation layer. Ipleyiti ecaba i-PECVD ayinayo ingxaki yokwalekwa kwe-bypass, kwaye inenzuzo enkulu ekusebenzeni kokwaleka, kwaye ingasetyenziselwa ukubekwa kweefilimu ze-doped Si, Si0X, SiCX. Ukungalungi kukuba ifilimu edibeneyo iqulethe i-hydrogen eninzi, kulula ukubangela i-blistering ye-film layer, inqunyelwe kwi-thickness of the coating. Itekhnoloji yokugquma i-lpcvd isebenzisa i-tube yokugquma isithando somlilo, enomthamo omkhulu, inokufaka ifilimu ye-polysilicon engqindilili, kodwa kuya kubakho ukujikeleza kwe-plating kwenzeka, kwinkqubo ye-lpcvd emva kokususwa kokujikeleza komgangatho wefilimu kwaye ayilimazi umaleko ongezantsi. Iiseli ze-Topcon eziveliswe ngobuninzi ziye zafumana umyinge wokuguqulwa kokusebenza kakuhle kwe-23%.
——Eli nqaku likhutshwe nguumatshini wokugquma ivacuumGuangdong Zhenhua
Ixesha lokuposa: Sep-22-2023