Alkiblar ci gaban fasahar ƙwayoyin silicon na crystalline ta kuma haɗa da fasahar PERT da fasahar Topcon, waɗannan fasahohin guda biyu ana ɗaukarsu a matsayin faɗaɗa fasahar ƙwayoyin halitta ta gargajiya, halayensu na gama gari sune layin passivation a bayan tantanin halitta, kuma duka suna amfani da layin poly silicon mai doped a matsayin filin baya, galibi ana amfani da makarantar a cikin babban zafin jiki mai oxidized, kuma ana amfani da layin poly silicon mai doped a hanyar LPCVD da PECVD, da sauransu. An yi amfani da Tubular PECVD da Tubular PECVD da farantin lebur PECVD a cikin samar da ƙwayoyin PERC mai yawa.
Tubular PECVD yana da babban ƙarfin aiki kuma gabaɗaya yana ɗaukar wutar lantarki mai ƙarancin mita na ɗimbin kHz. Matsalolin fashewar ion da kuma rufewa na iya shafar ingancin layin wucewa. Farantin lebur na PECVD ba shi da matsalar rufewa, kuma yana da fa'ida mafi girma a cikin aikin rufewa, kuma ana iya amfani da shi don adana fina-finan Si, Si0X, da SiCX da aka yi amfani da su. Rashin kyawun shine fim ɗin da aka yi amfani da shi ya ƙunshi hydrogen mai yawa, mai sauƙin haifar da kumfa na layin fim, wanda aka iyakance a cikin kauri na murfin. Fasahar rufewa ta lpcvd ta amfani da murfin tanderu na bututu, tare da babban ƙarfin aiki, na iya sanya fim ɗin polysilicon mai kauri, amma za a sami kewaye da farantin yana faruwa, a cikin tsarin lpcvd bayan cire kewaye da layin fim ɗin kuma baya cutar da ƙasan Layer. Kwayoyin Topcon da aka samar da yawa sun sami matsakaicin ingancin juyawa na 23%.
——An fitar da wannan labarin ne ta hannuninjin shafa injinGuangdong Zhenhua
Lokacin Saƙo: Satumba-22-2023