Cov kev taw qhia ntawm kev tsim cov thev naus laus zis crystalline silicon cell kuj suav nrog PERT thev naus laus zis thiab Topcon thev naus laus zis, ob lub thev naus laus zis no suav hais tias yog kev txuas ntxiv ntawm cov thev naus laus zis diffusion method, lawv cov yam ntxwv zoo sib xws yog txheej passivation nyob rau sab nraub qaum ntawm lub cell, thiab ob qho tib si siv ib txheej ntawm doped poly silicon ua lub tshav pob tom qab, lub tsev kawm ntawv feem ntau siv rau hauv cov txheej oxidized kub siab, thiab cov txheej doped poly silicon siv rau hauv txoj kev ntawm LPCVD thiab PECVD, thiab lwm yam. Tubular PECVD thiab Tubular PECVD thiab tiaj tiaj PECVD tau siv rau hauv kev tsim khoom loj ntawm PERC cell.
Tubular PECVD muaj peev xwm loj thiab feem ntau siv lub zog qis zaus ntawm ntau kaum tawm kHz. Ion bombardment thiab bypass plating teeb meem tuaj yeem cuam tshuam rau qhov zoo ntawm cov txheej passivation. Phaj tiaj PECVD tsis muaj teeb meem ntawm bypass plating, thiab muaj qhov zoo dua hauv kev ua haujlwm txheej, thiab tuaj yeem siv rau kev tso cov yeeb yaj kiab doped Si, Si0X, SiCX. Qhov tsis zoo yog tias cov yeeb yaj kiab plated muaj ntau hydrogen, yooj yim ua rau blistering ntawm cov txheej zaj duab xis, txwv hauv qhov tuab ntawm cov txheej. lpcvd txheej txheem siv lub raj cua sov txheej, nrog lub peev xwm loj, tuaj yeem tso cov yeeb yaj kiab polysilicon tuab dua, tab sis yuav muaj nyob ib puag ncig plating tshwm sim, hauv cov txheej txheem lpcvd tom qab tshem tawm ntawm ib puag ncig plating ntawm cov txheej zaj duab xis thiab tsis ua rau cov txheej hauv qab mob. Cov hlwb Topcon tsim tawm ntau tau ua tiav qhov nruab nrab hloov pauv ntawm 23%.
—— Tsab xov xwm no yog tso tawm los ntawmtshuab nqus tsev txheejGuangdong Zhenhua
Lub sijhawm tshaj tawm: Cuaj hlis-22-2023