The direction nke crystalline silicon cell technology development na-agụnye PERT technology na Topcon technology, abụọ a teknụzụ na-ahuta dị ka ndọtị nke omenala mgbasa usoro cell technology, ha nkịtị e ji mara bụ passivation oyi akwa n'azụ n'akụkụ nke cell, na ma na-eji a oyi akwa nke doped poly silicon dị ka azụ ubi, ụlọ akwụkwọ na-akasị ji na elu-okpomọkụ oxidized oyi akwa, na doped na polyEC nke oyi akwa na-eji, na-eji na-na-na doped polyEC nke oyi akwa LPC. E jirila PECVD na Tubular PECVD na efere dị larịị PECVD mee ihe n'ịmepụta nnukwu mkpụrụ ndụ PERC.
Tubular PECVD nwere nnukwu ikike na n'ozuzu na-anakwere ọkụ na-adịkarị ala nke ọtụtụ iri puku kHz. Ion bombardment na uzo nsogbu plating nwere ike imetụta àgwà nke passivation oyi akwa. Flat Plat PECVD enweghị nsogbu nke ịkwanye ihe na-agafe agafe, ma nwee uru dị ukwuu na arụmọrụ mkpuchi, a pụkwara iji ya mee ihe maka ntinye nke doped Si, Si0X, SiCX films. Ihe na-adịghị mma bụ na ihe nkiri a na-ekpuchi nwere ọtụtụ hydrogen, dị mfe ime ka ọnya nke oyi akwa ihe nkiri, na-ejedebe na ọkpụrụkpụ nke mkpuchi. lpcvd mkpuchi teknụzụ na-eji tube mkpuchi mkpuchi, nke nwere nnukwu ikike, nwere ike idobe ihe nkiri polysilicon siri ike, ma a ga-enwe gburugburu plating na-eme, na usoro lpcvd mgbe mwepụ nke gburugburu plating nke ihe nkiri oyi akwa ma ghara imerụ oyi akwa. Mkpụrụ ndụ Topcon emepụtara n'ụka enwetala nkezi ngbanwe ngbanwe nke 23%.
——Ọ bụ ya wepụtara isiokwu aigwe mkpuchi ikukuGuangdong Zhenhua
Oge nzipu: Sep-22-2023