Cov kev taw qhia ntawm crystalline silicon cell technology txhim kho kuj suav nrog PERT thev naus laus zis thiab Topcon thev naus laus zis, ob lub thev naus laus zis no tau suav tias yog kev txuas ntxiv ntawm cov txheej txheem diffusion ntawm tes thev naus laus zis, lawv cov yam ntxwv zoo ib yam yog txheej txheej ntawm sab nraub qaum ntawm tes, thiab ob qho tib si siv txheej txheej ntawm doped poly silicon raws li lub nraub qaum teb, lub tsev kawm ntawv feem ntau yog siv nyob rau hauv high-temperature diffusion txheej txheej ntawm silicon, thiab cov txheej txheem ntawm cov txheej txheem ntawm oxidized silicon yog siv nyob rau hauv txoj kev. PECVD, thiab lwm yam. Tubular PECVD thiab Tubular PECVD thiab tiaj phaj PECVD tau siv rau hauv cov khoom loj loj ntawm PERC hlwb.
Tubular PECVD muaj lub peev xwm loj thiab feem ntau siv cov khoom siv hluav taws xob tsawg tsawg ntawm ntau kaum ntawm kHz. Ion bombardment thiab bypass plating teeb meem tuaj yeem cuam tshuam qhov zoo ntawm txheej passivation. Pav ca PECVD tsis muaj teeb meem ntawm kev hla plating, thiab muaj qhov zoo dua hauv kev ua haujlwm txheej, thiab tuaj yeem siv rau kev tso tawm ntawm doped Si, Si0X, SiCX films. Qhov tsis zoo yog tias cov yeeb yaj kiab plated muaj ntau cov hydrogen, yooj yim ua rau blistering ntawm zaj duab xis txheej, txwv nyob rau hauv lub thickness ntawm txheej. lpcvd txheej tshuab siv lub raj rauv txheej txheej, nrog lub peev xwm loj, tuaj yeem tso cov yeeb yaj kiab polysilicon tuab, tab sis yuav muaj nyob ib puag ncig ntawm plating tshwm sim, hauv cov txheej txheem lpcvd tom qab tshem tawm ntawm ib ncig ntawm lub plating ntawm txheej zaj duab xis thiab tsis ua mob rau hauv qab txheej. Cov hlwb tsim tawm Topcon tau ua tiav qhov kev hloov pauv nruab nrab ntawm 23%.
—— Kab lus no tau tso tawm los ntawmtshuab nqus tsev txheej tshuabGuangdong Zhenhua
Post lub sij hawm: Sep-22-2023