Ukubekwa kwe-ion beam eqondile kuwuhlobo lwe-ion beam assisted deposition. I-ion beam deposition iwukubekwa kwe-ion beam engahlukani ngobuningi. Le nqubo yaqala ukusetshenziselwa ukukhiqiza amafilimu ekhabhoni afana nedayimane ngo-1971, ngokusekelwe esimisweni sokuthi ingxenye eyinhloko ye-cathode ne-anode yomthombo we-ion yenziwe ngekhabhoni.
Igesi enengqondo iholelwa ekamelweni lokuphuma, futhi insimu yamagnetic yangaphandle yengezwa ukuze ibangele ukuphuma kwe-plasma ngaphansi kwezimo zengcindezi ephansi, kuncike emthelela wokufafaza wama-ion kuma-electrode ukukhiqiza ama-ion e-carbon. Ama-ion ekhabhoni nama-ion aminyene ku-plasma angeniswa egumbini lokubeka ngesikhathi esifanayo, futhi asheshiswa ukuze ajovwe ku-substrate ngenxa yengcindezi yokuchema engemihle ku-substrate.
Imiphumela yokuhlola ibonisa ukuthi ama-ion ekhabhoni anamandla angu-50~100eV atigumbiizinga lokushisa, eSi, NaCI, KCI, Ni kanye namanye ama-substrates ekulungiseleleni ifilimu ye-carbon esobala njengedayimane, ukumelana nokuphakama okungama-10Q-cm, inkomba ye-refractive engaba ngu-2, engancibiliki kuma-acids we-inorganic kanye ne-organic, anobunzima obukhulu kakhulu.
——Le ndatshana ikhishwe nguumenzi womshini we-vacuum coatingI-Guangdong Zhenhua
Isikhathi sokuthumela: Aug-31-2023

