Uninzi lwezinto zeekhemikhali zinokufuthwa ngokuzidibanisa namaqela eekhemikhali, umz. iSi isabela neH ukwenza iSiH4, kwaye iAl idibana neCH3 ukwenza iAl(CH3). Kwinkqubo yeCVD yobushushu, iigesi ezingentla zifunxa amandla athile obushushu njengoko zidlula kwi-substrate eshushu kwaye zenze amaqela asabelayo, njenge-CH3 kunye ne-AL(CH3)2, njl. Emva koko ziyadibana ukuze zenze amaqela asabelayo, abekwa kwi-substrate. Emva koko, ziyadibana kwaye zibekwe njengeefilimu ezincinci. Kwimeko ye-PECVD, ukungqubana kwee-electron, amasuntswana anamandla kunye neemolekyuli zesigaba segesi kwi-plasma kunika amandla okusebenza afunekayo ukwenza la maqela eekhemikhali asabelayo.
Iingenelo zePECVD ikakhulu zikwimiba elandelayo:
(1) Ubushushu benkqubo obuphantsi xa buthelekiswa nokufakwa komphunga wekhemikhali okuqhelekileyo, okubangelwa ikakhulu kukusebenza kweplasma kwamasuntswana asabelayo endaweni yokusebenza kokufudumeza okuqhelekileyo;
(2) Kufana ne-CVD eqhelekileyo, ukugqunywa kakuhle kwe-wrap-round plating yomaleko wefilimu;
(3) Ukwakheka komaleko wefilimu kunokulawulwa ngokungacwangciswanga kakhulu, okwenza kube lula ukufumana iifilimu ezinamaleko amaninzi;
(4) Uxinzelelo lwefilimu lungalawulwa ngetekhnoloji yokuxuba amaza aphezulu/aphantsi.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha leposi: Epreli-18-2024