Uninzi lweziqalelo zemichiza zinokutshintsha zibe ngumphunga ngokuzidibanisa namaqela ekhemikhali, umz. i-Si idibana no-H ukwenza i-SiH4, kwaye i-Al idibanisa ne-CH3 yenze i-Al(CH3). Kwinkqubo ye-thermal CVD, iigesi ezingentla zithatha umlinganiselo othile wamandla ashushu njengoko zidlula kwi-substrate eshushu kwaye zenze amaqela asebenzayo, njenge-CH3 kunye ne-AL (CH3) 2, njl. Emva koko zidibanisa kunye ukuze zenze amaqela asebenzayo, athi ke afakwe kwi-substrate. Emva koko, zidibanisa enye kwenye kwaye zifakwe njengeefilimu ezincinci. Kwimeko ye-PECVD, ukungqubana kwee-electron, iinqununu ezinamandla kunye ne-gas-phase molecules kwi-plasma inikezela amandla okusebenza afunekayo ukuze enze la maqela amachiza asebenzayo.
Uncedo lwe-PECVD ikakhulu kule miba ilandelayo:
(1) Ubushushu benkqubo esezantsi xa kuthelekiswa nokubekwa komphunga wekhemikhali oqhelekileyo, obangelwa ikakhulu kukusebenza kweplasma yamasuntswana asebenzayo endaweni yokufudumeza okuqhelekileyo;
(2) Ngokufana ne-CVD eqhelekileyo, ukugoqa okulungileyo kwi-plating ye-film layer;
(3) Ukuqulunqwa komgca wefilimu kunokulawulwa ngokungqongqo kwinqanaba elikhulu, okwenza kube lula ukufumana iifilimu ezininzi;
(4) Uxinzelelo lwefilimu lunokulawulwa ngeteknoloji ephezulu / ephantsi yokuxuba iteknoloji.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: Apr-18-2024