Ubuchwepheshe bokufaka i-ion beam assisted beam buwubuchwepheshe bokufaka i-ion beam kanye ne-vapor deposition coating obuhlanganiswe nobuchwepheshe bokucubungula i-ion surface composite. Enqubweni yokuguqulwa kobuso bezinto ezifakwe i-ion, kungakhathaliseki ukuthi izinto ze-semiconductor noma izinto zobunjiniyela, kuvame ukufiseleka ukuthi ubukhulu besendlalelo esishintshiwe bube bukhulu kakhulu kunobokufakelwa kwe-ion, kodwa futhi bufuna ukugcina izinzuzo zenqubo yokufaka i-ion, njengesendlalelo esishintshiwe kanye ne-substrate phakathi kwe-interface ebukhali, kungacutshungulwa endaweni yokusebenza yokushisa kwegumbi, njalo njalo. Ngakho-ke, ngokuhlanganisa ukufakwa kwe-ion nobuchwepheshe bokufaka, ama-ion anamandla athile afakwa njalo ku-interface phakathi kwefilimu ne-substrate ngenkathi efaka i-coating, futhi ama-athomu e-interfacial axutshwa ngosizo lokushayisana kwe-cascade, akha indawo yokushintshana kwe-athomu eduze kwe-interface yokuqala ukuze kuthuthukiswe amandla okubopha phakathi kwefilimu ne-substrate. Bese, endaweni yokuxuba i-athomu, ifilimu enobukhulu obudingekayo kanye nezakhiwo iyaqhubeka nokukhula ngokubamba iqhaza kwe-ion beam.
Lokhu kubizwa ngokuthi i-Ion Beam Assisted Deposition (IBED), egcina izici zenqubo yokufaka ama-ion ngenkathi ivumela i-substrate ukuthi imbozwe ngezinto ezincane zefilimu ezihluke ngokuphelele kwi-substrate.
Ukufakwa kwe-ion beam assisted deposition kunezinzuzo ezilandelayo.
(1) Njengoba ukufakwa kwe-ion beam okusizwa ukukhiqiza i-plasma ngaphandle kokukhishwa kwegesi, ukumbozwa kungenziwa ngengcindezi engu-<10-2 Pa, kunciphisa ukungcoliswa kwegesi.
(2) Amapharamitha enqubo eyisisekelo (amandla e-ion, ubuningi be-ion) asebenza ngogesi. Ngokuvamile akudingeki ukuthi ulawule ukugeleza kwegesi kanye neminye imingcele engeyona kagesi, ungalawula kalula ukukhula kwengqimba yefilimu, ulungise ukwakheka kanye nesakhiwo sefilimu, kulula ukuqinisekisa ukuthi inqubo iyaphindaphindeka.
(3) Ubuso bento yokusebenza bungambozwa ngefilimu ehluke ngokuphelele ku-substrate futhi ukujiya akukhawulelwanga ngamandla ama-ion e-bombardment ekushiseni okuphansi (<200℃). Ifanele ukwelashwa kobuso bamafilimu asebenzayo afakwe i-doped, isikhunta esinomshini obandayo kanye nensimbi yesakhiwo eshisiwe ekushiseni okuphansi.
(4) Kuyinqubo engalingani elawulwa ekushiseni kwegumbi. Amafilimu amasha asebenzayo njengezigaba zokushisa okuphezulu, izigaba ezizinzile, ama-alloy angenawo ukwakheka, njll. angatholakala ekushiseni kwegumbi.
Izinkinga zokufakwa kwe-ion beam assisted deposition yilezi.
(1) Ngenxa yokuthi umsebe we-ion unezici zokukhanya okuqondile, kunzima ukubhekana nesimo esiyinkimbinkimbi sobuso bento yokusebenza
(2) Kunzima ukubhekana nezingcezu zokusebenza ezinkulu nezinkulu ngenxa yokulinganiselwa kobukhulu bomfudlana womsebe we-ion.
(3) Izinga lokufakwa kwe-ion beam assisted deposition livame ukuba cishe yi-1nm/s, elifanele ukulungiswa kwezingqimba zefilimu ezincane, futhi alifaneleki ukufakwa kwemikhiqizo eminingi.
–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua
Isikhathi sokuthunyelwe: Novemba-16-2023