Iteknoloji yokufakwa kwe-ion beam encediswa yiteknoloji yokufakwa kwe-ion beam kunye ne-vapor deposition coating edityaniswe neteknoloji yokucubungula i-ion surface composite. Kwinkqubo yokuguqulwa komphezulu wezinto ezifakwe kwi-ion, nokuba zizinto ze-semiconductor okanye izixhobo zobunjineli, Kudla ngokufunwa ukuba ubukhulu bomaleko oguquliweyo bube bukhulu kakhulu kunobo bokufakelwa kwe-ion, kodwa kwakhona ufuna ukugcina iingenelo zenkqubo yokufakwa kwe-ion, njengomaleko oguquliweyo kunye ne-substrate phakathi kwe-interface ebukhali, inokucutshungulwa kwindawo yokusebenza yobushushu begumbi, njalo njalo. Ke ngoko, ngokuhlanganisa ukufakwa kwe-ion kunye neteknoloji yokufakelwa, ii-ion ezinamandla athile zifakwa rhoqo kwi-interface phakathi kwefilimu kunye ne-substrate ngelixa zigqunywa, kwaye ii-athomu ze-interfacial zixutywa ngoncedo lwe-cascade collisions, zenze indawo yokutshintsha yokuxuba i-atom kufutshane ne-interface yokuqala ukuphucula amandla okubopha phakathi kwefilimu kunye ne-substrate. Emva koko, kwindawo yokuxuba i-atom, ifilimu enobukhulu obufunekayo kunye neempawu iyaqhubeka nokukhula ngokuthatha inxaxheba kwe-ion beam.
Oku kubizwa ngokuba yi-Ion Beam Assisted Deposition (IBED), egcina iimpawu zenkqubo yokufakelwa kwe-ion ngelixa ivumela i-substrate ukuba igqunywe ngezinto ezibhityileyo zefilimu ezahluke ngokupheleleyo kwi-substrate.
Ukufakwa kwe-ion beam assisted deposition kunezi nzuzo zilandelayo.
(1) Ekubeni i-ion beam assisted deposition ivelisa iplasma ngaphandle kokukhupha igesi, ukugquma kungenziwa ngoxinzelelo lwe-<10-2 Pa, okunciphisa ungcoliseko lwegesi.
(2) Iiparameter zenkqubo esisiseko (amandla e-ion, ubuninzi be-ion) zezombane. Ngokubanzi akufuneki zilawule ukuhamba kwegesi kunye nezinye iiparameter ezingezizo zombane, unokulawula ngokulula ukukhula komaleko wefilimu, ulungise ukwakheka kunye nolwakhiwo lwefilimu, kulula ukuqinisekisa ukuba inkqubo iyaphindaphindeka.
(3) Umphezulu wento yokusebenza ungagqunywa ngefilimu eyahlukileyo ngokupheleleyo kwi-substrate kwaye ubukhulu abuthintelwanga ngamandla ee-ion ze-bombardment kubushushu obuphantsi (<200℃). Ifanelekile kunyango lomphezulu weefilimu ezisebenzayo ezifakwe idophi, ii-molds ezicothayo zomatshini kunye nentsimbi yesakhiwo eqiniswa kubushushu obuphantsi.
(4) Yinkqubo engalinganiyo elawulwa kubushushu begumbi. Iifilimu ezintsha ezisebenzayo ezifana nezigaba zobushushu obuphezulu, izigaba ezizinzileyo, ii-alloys ezi-amorphous, njl.njl. zinokufumaneka kubushushu begumbi.
Iingxaki zokufakwa kwe-ion beam assisted deposition zezi.
(1) Ngenxa yokuba umqadi we-ion uneempawu zemitha ethe ngqo, kunzima ukujongana nemilo entsonkothileyo yomphezulu wesixhobo somsebenzi
(2) Kunzima ukujongana nezinto zokusebenza ezinkulu nezinkulu ngenxa yokulinganiselwa kobukhulu bomjelo we-ion beam.
(3) Izinga lokufakwa kwe-ion beam assisted deposition lidla ngokuba malunga ne-1nm/s, elifanele ukulungiswa kweengqimba zefilimu ezincinci, kwaye alifanelekanga ukugqunywa kweemveliso ezininzi.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha lokuthumela: Novemba-16-2023