I-ion beam assisted deposition technology umjovo we-ion beam kanye nobuchwepheshe bokufaka umhwamuko obuhlanganiswe nobuchwepheshe bokucubungula obuhlanganisiwe be-ion. Enqubweni yokuguqulwa kwendawo yezinto ezijovwe nge-ion, kungakhathaliseki ukuthi izinto ze-semiconductor noma izinto zobunjiniyela, kuvame ukufiswa ukuthi ukushuba kongqimba oluguquliwe kukhulu kakhulu kunokufakwa kwe-ion, kodwa futhi bafuna ukugcina izinzuzo zenqubo yomjovo we-ion, njengesendlalelo esilungisiwe kanye ne-substrate phakathi kwesixhumi esibonakalayo esibukhali, kungacutshungulwa endaweni yokusebenza yegumbi lokushisa, njalonjalo. Ngakho-ke, ngokuhlanganisa ukufakelwa kwe-ion nobuchwepheshe bokumboza, ama-ion anamandla athile ahlala ejovwe ku-interface phakathi kwefilimu ne-substrate ngenkathi kuhlanganiswa, futhi ama-athomu ahlangene ahlanganiswa ngosizo lokungqubuzana kwe-cascade, akhe indawo yokuguquka yokuxuba i-athomu eduze kwesixhumi esibonakalayo sokuqala ukuze kuthuthukiswe amandla okubopha phakathi kwefilimu ne-substrate. Khona-ke, endaweni yokuxuba i-athomu, ifilimu enobukhulu obudingekayo kanye nezakhiwo iyaqhubeka ikhula ngokubamba iqhaza kwe-ion beam.
Lokhu kubizwa nge-Ion Beam Assisted Deposition (IBED), egcina izici zenqubo yokufakelwa kwe-ion kuyilapho ivumela i-substrate ukuthi imbozwe ngento yefilimu encane ehluke ngokuphelele ku-substrate.
I-ion beam assisted deposition inezinzuzo ezilandelayo.
(1) Njengoba i-ion beam isiza ukubekelwa phansi ikhiqiza i-plasma ngaphandle kokukhishwa kwegesi, ukunamathela kungenziwa ngengcindezi ye-<10-2 Pa, ukunciphisa ukungcoliswa kwegesi.
(2) Imingcele yenqubo eyisisekelo (amandla e-ion, ukuminyana kwe-ion) igesi. Ngokuvamile akudingeki ukulawula ukugeleza kwegesi kanye neminye imingcele engeyona kagesi, ungakwazi ukulawula kalula ukukhula kwesendlalelo sefilimu, ulungise ukwakheka kanye nesakhiwo sefilimu, kulula ukuqinisekisa ukuphindaphinda kwenqubo.
(3) Ingaphezulu le-workpiece lingambozwa ngefilimu ehluke ngokuphelele ku-substrate futhi ukushuba akunqunyelwe amandla ama-ion aqhumayo ekushiseni okuphansi (<200℃). Ilungele ukwelashwa okungaphezulu kwamafilimu asebenzayo afakwe ama-doped, isikhunta esinemba ngomshini obandayo kanye nensimbi yesakhiwo esinezinga lokushisa eliphansi.
(4) Kuyinqubo engalingani elawulwa ekamelweni lokushisa. Amafilimu amasha asebenzayo afana nezigaba zokushisa okuphezulu, izigaba eziqinile, ama-alloys amorphous, njll. angatholakala ekamelweni lokushisa.
Ububi be-ion beam assisted deposition yile.
(1) Ngenxa yokuthi i-ion beam inezici zemisebe eqondile, kunzima ukubhekana nesimo esiyinkimbinkimbi sendawo yokusebenza
(2) Kunzima ukubhekana nezinto zokusebenza ezinkulu nezinkulu ngenxa yomkhawulo wosayizi wokusakaza kwe-ion beam.
(3) Izinga le-ion elisizwayo lokubeka i-ion ngokuvamile liba ngu-1nm/s, elifanele ukulungiswa kwezendlalelo zefilimu elincanyana, futhi elingafanele ukucwebeliswa kwenani elikhulu lemikhiqizo.
-Le ndatshana ikhishwe nguumenzi womshini we-vacuum coatingI-Guangdong Zhenhua
Isikhathi sokuthumela: Nov-16-2023