Itekhnoloji ye-Ion encediswayo yokubeka itekhnoloji yinaliti ye-ion beam kunye netekhnoloji yokwambathisa umphunga edityaniswe neteknoloji yokusetyenzwa komphezulu we-ion. Kwinkqubo yokuguqulwa komphezulu wezinto ezitofelweyo ze-ion, nokuba zizixhobo zesemiconductor okanye izixhobo zobunjineli, kudla ngokunqweneleka ukuba ubukhulu bomaleko oguquliweyo bukhulu kakhulu kunobo bofakelo lwe-ion, kodwa kwakhona ufuna ukugcina izibonelelo zenkqubo yokutofa i-ion, njengomaleko olungisiweyo kunye ne-substrate phakathi kojongano olubukhali, inokucutshungulwa kwindawo yokusebenza yobushushu begumbi, njalo njalo. Ngoko ke, ngokudibanisa i-ion implantation kunye nobuchwepheshe bokugquma, ii-ion ezinamandla athile zihlanjululwa ngokuqhubekayo kwi-interface phakathi kwefilimu kunye ne-substrate ngelixa i-athomu idibanisa, kwaye i-athomu edibeneyo ixutywe ngoncedo lwe-cascade collisions, ukwenza indawo yenguqu yokuxuba i-athomu kufuphi ne-interface yokuqala ukuphucula amandla okudibanisa phakathi kwefilimu kunye ne-substrate. Emva koko, kwindawo yokuxuba i-athomu, ifilimu enobunzima obufunekayo kunye neepropati ziyaqhubeka zikhula ngokuthatha inxaxheba kwe-ion beam.
Oku kubizwa ngokuba yi-Ion Beam Assisted Deposition (IBED), egcina iimpawu zenkqubo yokufakelwa kwe-ion ngelixa ivumela i-substrate ukuba ifakwe ngefilimu encinci yefilimu ehluke ngokupheleleyo kwi-substrate.
Ion beam encediswayo yokubeka inezi nzuzo zilandelayo.
(1) Ekubeni i-ion beam incediswa i-deposition yenza i-plasma ngaphandle kokukhutshwa kwegesi, i-coating ingenziwa ngoxinzelelo lwe-<10-2 Pa, ukunciphisa ukungcoliswa kwegesi.
(2) Iiparamitha zenkqubo esisiseko (amandla e-ion, ubuninzi be-ion) zigesi. Ngokuqhelekileyo akufuneki ukulawula ukuhamba kwegesi kunye nezinye iiparameters ezingekho zombane, unokulawula ngokulula ukukhula kwefilimu, ukulungelelanisa ukubunjwa kunye nesakhiwo sefilimu, kulula ukuqinisekisa ukuphindaphinda kwenkqubo.
(3) Umphezulu we-workpiece unokugqithwa ngefilimu ehluke ngokupheleleyo kwi-substrate kwaye ubukhulu abukhawulelwanga ngamandla e-bombardment ions kwiqondo lokushisa eliphantsi (<200℃). Ifanelekile kunyango olungaphezulu lweefilimu ezisebenzayo ezifakwe kwi-doped, i-mold machined precision molds kunye nobushushu obuphantsi bentsimbi epholileyo.
(4) Yinkqubo engalinganiyo elawulwa kwiqondo lokushisa. Iifilimu ezintsha ezisebenzayo ezifana nezigaba eziphezulu zokushisa, izigaba ezizinzileyo, i-amorphous alloys, njl.
Ububi be-ion beam encediswayo yokubeka.
(1) Ngenxa yokuba umqa we-ion uneempawu ezithe ngqo zemitha, kunzima ukujongana nemilo entsonkothileyo yomphezulu wesixhobo sokusebenza
(2) Kunzima ukujongana neendawo zokusebenza ezinkulu kunye neendawo ezinkulu ngenxa yokunciphisa ubungakanani bomlambo we-ion beam.
(3) I-ion beam encediswayo yokubeka isantya idla ngokujikeleza i-1nm/s, elungele ukulungiswa kweemaleko zefilim ezibhityileyo, kwaye ayifanelekanga ukubekwa kweemveliso ezininzi.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: Nov-16-2023