ʻO ka ʻenehana hoʻoheheʻe i kōkua ʻia e ka Ion beam ʻo ia ka ʻenehana hoʻoheheʻe ion beam a me ka ʻenehana hoʻoheheʻe ʻana i ka mahu i hui pū ʻia me ka ʻenehana hoʻoheheʻe ʻia o ka ion surface composite. I ke kaʻina hana o ka hoʻololi ʻana o ka ion injected mea, inā he semiconductor a i ʻole nā mea hana ʻenekinia, makemake pinepine ʻia ka mānoanoa o ka papa i hoʻololi ʻia ma mua o ka implantation ion, akā makemake nō hoʻi e mālama i nā pono o ke kaʻina hana injection, e like me ka papa i hoʻololi ʻia a me ka substrate ma waena o ka ʻaoʻao ʻoi, hiki ke hana ʻia i ka workpiece wela lumi, a pēlā aku. No laila, ma ka hoʻohui ʻana i ka implantation ion me ka ʻenehana coating, ua hoʻokomo mau ʻia nā ion me kahi ikehu i loko o ka interface ma waena o ke kiʻiʻoniʻoni a me ka substrate i ka wā e uhi ʻia ai, a hui pū ʻia nā ʻātoma interfacial me ke kōkua o ka hui ʻana o ka cascade, e hana ana i kahi ʻāpana hoʻololi hoʻohuihui atom kokoke i ka interface mua e hoʻomaikaʻi ai i ka ikaika paʻa ma waena o ke kiʻiʻoniʻoni a me ka substrate. A laila, ma ka ʻāpana hui ʻana o ka atom, ke hoʻomau nei ka kiʻiʻoniʻoni me ka mānoanoa i koi ʻia a me nā waiwai e ulu me ke komo ʻana o ka beam ion.
Kapa ʻia kēia i kapa ʻia ʻo Ion Beam Assisted Deposition (IBED), ka mea mālama i nā ʻano o ke kaʻina hana implantation ʻoiai e ʻae ana i ka substrate e uhi ʻia me kahi mea ʻoniʻoni ʻoniʻoni ʻokoʻa loa mai ka substrate.
ʻO ka hoʻopaʻa ʻia ʻana o ka Ion beam i kōkua ʻia.
(1) Ma muli o ka hoʻoheheʻe ʻana o ka ion beam i ka plasma me ka ʻole o ka hoʻokuʻu ʻia ʻana o ke kinoea, hiki ke hana i ka uhi ʻana ma ke kaomi o <10-2 Pa, e hōʻemi ana i ka hoʻohaumia kinoea.
(2) He uila nā ʻāpana kaʻina hana maʻamau (Ion Energy, Ion density). ʻAʻole pono e hoʻomalu i ke kahe o ke kinoea a me nā ʻāpana uila ʻē aʻe, hiki iā ʻoe ke hoʻomalu i ka ulu ʻana o ka papa kiʻiʻoniʻoni, hoʻoponopono i ke ʻano a me ke ʻano o ke kiʻiʻoniʻoni, maʻalahi e hōʻoia i ka hana hou ʻana o ke kaʻina hana.
(3) Hiki ke uhi ʻia ka ʻili o ka mea hana me kahi kiʻiʻoniʻoni ʻokoʻa loa mai ka substrate a ʻaʻole i kaupalena ʻia ka mānoanoa e ka ikehu o nā ion bombardment ma ka wela haʻahaʻa (<200 ℃). He kūpono ia no ka mālama ʻana i ka ʻili o nā kiʻiʻoniʻoni doped, nā mea hoʻoheheʻe ʻia i ka mīkini anu a me ke kila haʻahaʻa haʻahaʻa haʻahaʻa.
(4) He kaʻina non-equilibrium i hoʻomaluʻia i ka mahana wela. Hiki ke loaʻa i nā kiʻiʻoniʻoni hana hou e like me nā pae wela kiʻekiʻe, substable phase, amorphous alloys, etc.
ʻO nā pōʻino o ka hoʻoheheʻe ʻana i ke kukui ion.
(1) No ka loaʻa ʻana o nā hiʻohiʻona radiation i ka ion beam, paʻakikī ke hoʻoponopono i ke ʻano paʻakikī o ka mea hana
(2) He mea paʻakikī ke hana me nā mea hana nui a me ka nui ma muli o ka palena o ka nui o ke kahawai ion.
(3) ʻO ka nui o ka deposition i kōkua ʻia e ka ion beam ma kahi o 1nm/s, kūpono ia no ka hoʻomākaukau ʻana i nā papa kiʻiʻoniʻoni lahilahi, a ʻaʻole kūpono no ka hoʻopaʻa ʻana i nā huahana he nui.
-Ua hoʻokuʻu ʻia kēia ʻatikala emea hana mīkini hoʻopaʻa haʻahaʻaGuangdong Zhenhua
Ka manawa hoʻouna: Nov-16-2023