Kunezindlela ezimbili eziyinhloko zokufakwa kwe-ion beam-assisted deposition, enye i-dynamic hybrid; enye i-static hybrid. Eyokuqala ibhekisela efilimini enqubweni yokukhula ihlala ihambisana namandla athile kanye nomsinga womsinga we-ion bombardment kanye nefilimu; eyokugcina ibekwa ngaphambili ebusweni be-substrate ungqimba olungaphansi kwama-nanometer ambalwa ubukhulu bengqimba yefilimu, bese kuba yi-dynamic ion bombardment, futhi ingaphindaphindwa izikhathi eziningi kanye nokukhula kwengqimba yefilimu.
Amandla okukhanya kwe-ion akhethelwe ukufakwa kwe-ion beam assisted deposition yamafilimu amancane aphakathi kuka-30 eV kuya ku-100 keV. Ububanzi bamandla obukhethiwe buxhomeke kuhlobo lwesicelo ifilimu ekhiqizwa ngalo. Isibonelo, ukulungiswa kokuvikelwa kokugqwala, ukuguguleka okulwa nomshini, izembozo zokuhlobisa kanye namanye amafilimu amancane kufanele kukhethwe amandla aphezulu okuqhumisa. Ukuhlolwa kubonisa ukuthi, njengokukhetha amandla angu-20 kuya ku-40keV e-ion beam bombardment, izinto ezingaphansi kanye nefilimu ngokwayo ngeke kuthinte ukusebenza nokusetshenziswa komonakalo. Ekulungiseleleni amafilimu amancane amadivayisi optical kanye ne-elekthronikhi, kufanele kukhethwe ukufakwa kwe-ion beam assisted deposition enamandla aphansi, okungagcini nje ngokunciphisa ukumuncwa kokukhanya futhi kugweme ukwakheka kweziphambeko ezisebenza ngogesi, kodwa futhi kusiza ukwakheka kwesakhiwo sesimo esizinzile se-membrane. Izifundo zibonise ukuthi amafilimu anezakhiwo ezinhle kakhulu angatholakala ngokukhetha amandla e-ion angaphansi kuka-500 eV.
–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua
Isikhathi sokuthunyelwe: Mashi-11-2024