Kukho iindlela ezimbini eziphambili zokufakwa kwe-ion beam-assisted deposition, enye yi-dynamic hybrid; enye yi-static hybrid. Eyokuqala ibhekisa kwifilimu kwinkqubo yokukhula isoloko ihamba kunye namandla athile kunye nomsinga we-ion bombardment kunye nefilimu; eyesibini ibekwa ngaphambili kumphezulu we-substrate umaleko ongaphantsi kwe-nanometers ezimbalwa ubukhulu bomaleko wefilimu, uze emva koko i-dynamic ion bombardment, kwaye inokuphindwa amaxesha amaninzi kunye nokukhula komaleko wefilimu.
Amandla e-ion beam akhethiweyo kwi-ion beam assisted deposition yeefilimu ezincinci aphakathi kwe-30 eV ukuya kwi-100 keV. Uluhlu lwamandla olukhethiweyo luxhomekeke kuhlobo lwesicelo esenziwe ngalo ifilimu. Umzekelo, ukulungiswa kokhuseleko lokugqwala, ukuguguleka okuchasene noomatshini, iingubo zokuhombisa kunye nezinye iifilimu ezincinci kufuneka kukhethwe amandla aphezulu okuqhumisa. Uvavanyo lubonisa ukuba, njengokukhetha amandla angama-20 ukuya kuma-40keV e-ion beam bombardment, izinto ze-substrate kunye nefilimu ngokwayo aziyi kuchaphazela ukusebenza kunye nokusetyenziswa komonakalo. Ekulungiseleleni iifilimu ezincinci zezixhobo ze-optical neze-elektroniki, kufuneka kukhethwe i-ion beam assisted deposition enamandla aphantsi, engagcini nje ngokunciphisa ukutsalwa kokukhanya kwaye iphephe ukwenziwa kweziphene ezisebenza ngombane, kodwa ikwanceda ukwakheka kwesakhiwo se-membrane esizinzileyo. Izifundo zibonise ukuba iifilimu ezineempawu ezintle zinokufunyanwa ngokukhetha amandla e-ion angaphantsi kwe-500 eV.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha leposi: Matshi-11-2024