Akwai manyan hanyoyi guda biyu na adana ion beam-assisted deposition, ɗaya shine dynamic hybrid; ɗayan kuma shine static hybrid. Na farko yana nufin fim ɗin a cikin tsarin girma koyaushe yana tare da wani kuzari da hasken wutar lantarki na ion bombardment da fim; na biyun an riga an ajiye shi a saman substrate wani Layer mai ƙasa da 'yan nanometers kauri na fim ɗin, sannan kuma dynamic ion bombardment, kuma ana iya maimaita shi sau da yawa da kuma girman fim ɗin.
Ƙarfin hasken ion da aka zaɓa don adanawa da taimakon hasken ion na siririn fina-finai suna cikin kewayon 30 eV zuwa 100 keV. Tsarin makamashi da aka zaɓa ya dogara da nau'in aikace-aikacen da ake haɗa fim ɗin. Misali, ya kamata a zaɓi shirye-shiryen kariyar tsatsa, lalacewar hana injina, rufin ado da sauran siririn fina-finai mafi girma. Gwaje-gwaje sun nuna cewa, kamar zaɓin makamashin ion daga 20 zuwa 40keV na fashewar hasken ion, kayan substrate da fim ɗin da kansa ba za su shafi aiki da amfani da lalacewar ba. A cikin shirye-shiryen fina-finai masu siriri don na'urorin gani da na lantarki, ya kamata a zaɓi ƙaramin ajiyar hasken ion da aka taimaka wa hasken, wanda ba wai kawai yana rage shaƙar haske ba kuma yana guje wa samuwar lahani da aka kunna ta hanyar lantarki, amma kuma yana sauƙaƙa samuwar yanayin membrane mai ƙarfi. Nazarin ya nuna cewa ana iya samun fina-finai masu kyawawan halaye ta hanyar zaɓar kuzarin ion ƙasa da 500 eV.
– An fitar da wannan labarin ne dagainjin shafa injin injinGuangdong Zhenhua
Lokacin Saƙo: Maris-11-2024

