1, Ukwenziwa kweekhompawundi zesinyithi kumphezulu ekujoliswe kuwo
Iphi le khemikhali yenziwe kwinkqubo yokwenza i-compound ukusuka kumphezulu wethagethi yesinyithi ngenkqubo yokutshiza okusebenzayo? Ekubeni i-chemical reaction phakathi kwee-reactive gas particles kunye nee-atoms zomphezulu ekujoliswe kuzo ivelisa ii-atoms ezidityanisiweyo, ezidla ngokuba yi-exothermic, ubushushu bokusabela kufuneka bube nendlela yokuphuma, kungenjalo i-chemical reaction ayinakuqhubeka. Phantsi kweemeko ze-vacuum, ukudluliselwa kobushushu phakathi kweegesi akunakwenzeka, ngoko ke i-chemical reaction kufuneka yenzeke kumphezulu oqinileyo. I-reaction sputtering ivelisa ii-compounds kumphezulu ekujoliswe kuwo, kumphezulu we-substrate, nakwezinye iindawo ezakhiweyo. Injongo kukuvelisa ii-compounds kumphezulu we-substrate, ukuvelisa ii-compounds kwezinye iindawo ezakhiweyo kukuchithwa kwezixhobo, kwaye ukuvelisa ii-compounds kumphezulu ekujoliswe kuwo kuqala njengomthombo wee-atoms ezidityanisiweyo kwaye kube ngumqobo wokubonelela rhoqo ngee-atoms ezidityanisiweyo.
2, Izinto ezibangela impembelelo yokutyhefa ekujoliswe kuko
Eyona nto iphambili echaphazela ityhefu ekujoliswe kuyo ngumlinganiselo wegesi yokusabela kunye negesi ekhuphayo, igesi yokusabela eninzi kakhulu iya kukhokelela kwityhefu ekujoliswe kuyo. Inkqubo yokukhupha ityhefu esebenzayo yenziwa kwindawo yomjelo wokuphalaza umphezulu ojoliswe kuyo ibonakala ngathi igutyungelwe yi-compound yokusabela okanye i-compound yokusabela isusiwe kwaye iphinda ivele kumphezulu wesinyithi. Ukuba izinga lokuveliswa kwe-compound likhulu kunezinga lokukhupha i-compound, indawo yokugubungela i-compound iyanda. Ngamandla athile, ubungakanani begesi yokusabela ebandakanyekayo ekuveliseni i-compound buyanda kwaye izinga lokuveliswa kwe-compound liyanda. Ukuba ubungakanani begesi yokusabela buyanda kakhulu, indawo yokugubungela i-compound iyanda. Kwaye ukuba izinga lokuhamba kwegesi yokusabela alinakulungiswa ngexesha, izinga lokunyuka kwendawo yokugubungela i-compound alincitshiswa, kwaye umjelo wokuphalaza uya kugutyungelwa ngakumbi yi-compound, xa ithagethi yokuphalaza igutyungelwe ngokupheleleyo yi-compound, ithagethi ityhefu ngokupheleleyo.
3, Isiganeko sokutyhefa ekujoliswe kuko
(1) ukuqokelelwa kwee-ion ezilungileyo: xa ityhefu ekujoliswe kuyo isenziwa, umaleko wefilimu yokukhusela iya kwenziwa kumphezulu ekujoliswe kuwo, ii-ion ezilungileyo zifikelela kumphezulu ekujoliswe kuwo we-cathode ngenxa yokuvaleka komaleko wokukhusela. Ayingeni ngqo kumphezulu ekujoliswe kuwo we-cathode, kodwa iqokelela kumphezulu ekujoliswe kuwo, kulula ukuvelisa intsimi ebandayo ukuya kwi-arc discharge — i-arcing, ukuze ukutshiza kwe-cathode kungaqhubeki.
(2) ukunyamalala kwe-anode: xa ityhefu ekujoliswe kuyo ifunyanwa, udonga lwegumbi lokucoca umoya oluphantsi komhlaba luphinde lwafakwa ifilimu yokukhusela, i-electron ye-anode ayikwazi ukungena kwi-anode, ukwakheka kwento yokunyamalala kwe-anode.
4, Inkcazo ebonakalayo yetyhefu ekujoliswe kuyo
(1) Ngokubanzi, i-coefficient yesibini yokukhupha ii-electron kwiikhompawundi zesinyithi iphezulu kuneyeesinyithi. Emva kokutyhefwa kwethagethi, umphezulu wethagethi yikhompawundi zesinyithi zonke, kwaye emva kokuqhushumba zii-ion, inani lee-electron zesibini ezikhutshwayo liyakhula, nto leyo ephucula ukuhanjiswa kwendawo kwaye inciphise i-plasma impedance, nto leyo ekhokelela kwi-voltage ephantsi yokutshiza. Oku kunciphisa izinga lokutshiza. Ngokubanzi i-voltage yokutshiza ye-magnetron sputtering iphakathi kwe-400V-600V, kwaye xa kuvela i-potential poisoning, i-voltage yokutshiza iyancipha kakhulu.
(2) Izinga lokutshiza ekuqaleni kwentsimbi ekujoliswe kuyo kunye neliyi-compound target lahlukile, ngokubanzi i-coefficient yokutshiza yentsimbi iphezulu kune-coefficient yokutshiza ye-compound, ngoko ke izinga lokutshiza liphantsi emva kokutyhefa ekujoliswe kuko.
(3) Ukusebenza kakuhle kokutshiza kwegesi etshiza esebenzayo ekuqaleni kuphantsi kokusebenza kakuhle kokutshiza kwegesi engasebenziyo, ngoko ke izinga elipheleleyo lokutshiza liyehla emva kokuba umlinganiselo wegesi etshizayo unyukile.
5, Izisombululo zokutyhefa ekujoliswe kuko
(1) Sebenzisa umbane osetyenziswa rhoqo ngexesha eliphakathi okanye umbane osetyenziswa rhoqo ngexesha lerediyo.
(2) Sebenzisa ulawulo oluvaliweyo lokungena kwegesi yokusabela.
(3) Yamkela iithagethi ezimbini
(4) Lawula utshintsho kwindlela yokugquma: Ngaphambi kokugquma, i-hysteresis effect curve ye-target poisoning iqokelelwa ukuze ukuhamba komoya ongenayo kulawulwe ngaphambili kokuvelisa i-target poisoning ukuqinisekisa ukuba inkqubo isoloko ikwi-mode ngaphambi kokuba izinga lokufaka lihle kakhulu.
–Eli nqaku lipapashwe yiGuangdong Zhenhua Technology, umenzi wezixhobo zokugquma nge-vacuum.
Ixesha lokuthumela: Novemba-07-2022