Ukususwa koMphunga weKhemikhali (i-CVD). Njengoko igama lisitsho, yindlela esebenzisa ii-reactants ze-gaseous precursor ukuvelisa iifilimu eziqinileyo ngokusebenzisa ii-atomic kunye nee-intermolecular chemical reactions. Ngokungafaniyo ne-PVD, inkqubo ye-CVD yenziwa kakhulu kwindawo enoxinzelelo oluphezulu (i-vacuum ephantsi), apho uxinzelelo oluphezulu lusetyenziswa ikakhulu ukwandisa izinga lokufakwa kwefilimu. Ukufakwa komphunga weKhemikhali kunokwahlulwahlulwa kwi-CVD ngokubanzi (ekwaziwa ngokuba yi-thermal CVD) kunye nokufakwa komphunga wekhemikali ophuculweyo nge-plasma (i-Plasma-Enhanced Chemical Vapor Deposition. PECVD) ngokwendlela i-plasma ebandakanyeka ngayo kwinkqubo yokufakwa. Eli candelo ligxile kwitekhnoloji ye-PECVD kuquka inkqubo ye-PECVD kunye nezixhobo ze-PECVD ezisetyenziswa rhoqo kunye nomgaqo wokusebenza.
Ukufakwa komphunga wekhemikhali ophuculweyo ngeplasma yindlela yokufakwa komphunga wekhemikhali ebhityileyo esebenzisa iplasma yokukhupha ukukhanya ukuze ibe nefuthe kwinkqubo yokufakwa ngelixa inkqubo yokufakwa komphunga wekhemikhali ophantsi koxinzelelo isenzeka. Ngale ndlela, iteknoloji yesiqhelo yeCVD ixhomekeke kumaqondo obushushu aphezulu ukuze kufezekiswe impendulo yekhemikhali phakathi kwezinto zesigaba segesi kunye nokufakwa kweefilimu ezincinci, kwaye ngaloo ndlela inokubizwa ngokuba yiteknoloji yeCVD yobushushu.
Kwisixhobo sePECVD, uxinzelelo lwegesi olusebenzayo lumalunga ne-5~500 Pa, kwaye uxinano lwee-elektroni kunye nee-ion lunokufikelela kwi-109~1012/cm3, ngelixa amandla aphakathi ee-elektroni anokufikelela kwi-1~10 eV. Okwahlula indlela yePECVD kwezinye iindlela zeCVD kukuba i-plasma inenani elikhulu lee-elektroni ezinamandla aphezulu, ezinokubonelela ngamandla okusebenza afunekayo kwinkqubo yokubeka umphunga wekhemikhali. Ukungqubana kwee-elektroni kunye neemolekyuli zesigaba segesi kunokukhuthaza ukubola, i-chemosynthesis, i-excitation kunye neenkqubo ze-ionization zeemolekyuli zegesi, kuvelisa amaqela eekhemikhali asabela kakhulu, ngaloo ndlela kunciphisa kakhulu uluhlu lobushushu be-CVD thin film deposition, okwenza kube nokwenzeka ukufezekisa inkqubo yeCVD, ekufuneka yenziwe ekuqaleni kumaqondo obushushu aphezulu, kumaqondo obushushu aphantsi. Inzuzo yokubeka ifilimu thin temperature ephantsi kukuba inokuthintela ukusasazwa okungeyomfuneko kunye nokusabela kweekhemikhali phakathi kwefilimu kunye ne-substrate, utshintsho lwesakhiwo kunye nokuwohloka kwefilimu okanye izinto ze-substrate, kunye noxinzelelo olukhulu lobushushu kwifilimu nakwi-substrate.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha leposi: Epreli-18-2024