Xa kuqala ukufakwa kweeathom ze-membrane, i-ion bombardment ineziphumo ezilandelayo kwi-membrane/substrate interface.
(1) Ukuxubana ngokwasemzimbeni. Ngenxa yokufakwa kwe-ion enamandla aphezulu, ukutshiza kwee-athomu ezigciniweyo kunye nokufakwa kwe-recoil kwee-athomu zomhlaba kunye nesiganeko sokungqubana kwe-cascade, kuya kubangela indawo ekufutshane yomphezulu we-membrane/base interface yezinto ze-substrate kunye nezinto ze-membrane zomxube ongasasazekiyo, esi siphumo sokuxuba siya kunceda ekwakhiweni kwe-membrane/base interface "pseudo-diffusion layer", oko kukuthi, umaleko wokutshintsha phakathi kwe-membrane/base interface, ukuya kuthi ga kwi-microns ezimbalwa ubukhulu. Ii-micrometer ezimbalwa ubukhulu, apho izigaba ezintsha zinokuvela khona. Oku kulungile kakhulu ukuphucula amandla okunamathela kwe-membrane/base interface.
(2) Ukwanda kokusasazwa. Uxinzelelo oluphezulu lwesiphene kwindawo ekufutshane nomphezulu kunye nobushushu obuphezulu kwandisa izinga lokusasazwa. Ekubeni umphezulu usisiphene senqaku, ii-ion ezincinci zinotyekelo lokuphambuka kumphezulu, kwaye ukuqhushumba kwee-ion kunefuthe lokuphucula ngakumbi ukuphambuka komphezulu kunye nokuphucula ukusasazeka kwee-athomu ezigciniweyo kunye nezingaphantsi komhlaba.
(3) Imo ye-nucleation ephuculweyo. Iimpawu ze-athomu edityanisiweyo kumphezulu we-substrate zimiselwa kukunxibelelana kwayo nomphezulu kunye neempawu zayo zokufuduka kumphezulu. Ukuba akukho nxibelelwano luqinileyo phakathi kwe-athomu edityanisiweyo kunye nomphezulu we-substrate, i-athomu iya kusasazeka kumphezulu ide i-nucleates kwindawo enamandla aphezulu okanye ingqubane nezinye ii-athomu ezisasaza. Le ndlela ye-nucleation ibizwa ngokuba yi-non-reactive nucleation. Nokuba i-original ikwimeko yemo ye-non-reactive nucleation, nge-ion bombardment yomphezulu we-substrate inokuvelisa iziphene ezingaphezulu, inyuse uxinano lwe-nucleation, olunceda ngakumbi ekwakhiweni kwemo ye-diffusion - reactive nucleation.
(4) Ukususwa okukhethekileyo kweeathom ezibotshelelwe ngokukhululekileyo. Ukutshiza kweeathom zomhlaba kumiselwa yimeko yokubopha yendawo, kwaye ukuqhushumba kweeion kumphezulu kunokwenzeka ukuba kutshize iiathom ezibotshelelwe ngokukhululekileyo. Esi siphumo sibonakala ngakumbi ekwakhiweni kwe-diffusion-reactive interfaces.
(5) Ukuphuculwa kokugquma komphezulu kunye nokuphuculwa kwe-plating bypass. Ngenxa yoxinzelelo oluphezulu lwegesi olusebenzayo lwe-ion plating, ii-athomu eziphumayo okanye ezitshiziweyo zidibana nee-athomu zegesi ukuze kuphuculwe ukusasazeka kwazo, nto leyo ekhokelela kwiipropati ezilungileyo zokugquma.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha lokuthumela: Disemba-09-2023