Ukukhula kwe-Epitaxial, okuvame ukubizwa nangokuthi i-epitaxy, kungenye yezinqubo ezibaluleke kakhulu ekwakhiweni kwezinto namadivayisi e-semiconductor. Lokhu okubizwa ngokuthi ukukhula kwe-epitaxial kungaphansi kwezimo ezithile ku-substrate eyodwa yekristalu ekukhuleni kwesendlalelo senqubo yefilimu yomkhiqizo owodwa, ukukhula kwefilimu eyodwa yekristalu kubizwa ngokuthi ungqimba lwe-epitaxial. Ubuchwepheshe be-epitaxial buqala ngawo-1960 ocwaningweni lwefilimu encane ye-silicon eyodwa yekristalu ngesisekelo sokuvela kwentuthuko cishe iminyaka engamashumi amahlanu manje, abantu bakwazile ukufeza izinhlobo ezahlukene zamafilimu e-semiconductor ngaphansi kwezimo ezithile zokukhula kwe-epitaxial. Ubuchwepheshe be-Epitaxial buxazulule izinkinga eziningi ezingxenyeni ezihlukene ze-semiconductor kanye nezifunda ezihlanganisiwe, okuthuthukisa kakhulu ukusebenza kwedivayisi. Ifilimu ye-Epitaxial ingalawula ngokunembile ubukhulu bayo kanye nezakhiwo zokusebenzisa izidakamizwa, lesi sici siholele ekuthuthukisweni okusheshayo kwezifunda ezihlanganisiwe ze-semiconductor, zibe yisigaba esiphelele kakhulu. Ikristalu eyodwa ye-Silicon ngokusika, ukugaya, ukupholisha kanye nezinye izindlela zokucubungula, ukuze uthole ishidi elipholishiwe, ungenza izingxenye ezihlukene kanye nezifunda ezihlanganisiwe kulo. Kodwa ezimweni eziningi leli shidi elicwebezelisiwe kuphela njengokusekelwa komshini we-substrate, lapho kudingeka khona kuqala ukukhulisa ungqimba lwefilimu ye-single-crystal enohlobo olufanele lokuqhuba kanye nokumelana, bese kuba izingxenye ezihlukene noma amasekethe ahlanganisiwe akhiqizwa kwifilimu ye-single-crystal. Le ndlela isetshenziswa, isibonelo, ekukhiqizweni kwama-transistors anamandla aphezulu e-silicon high-frequency, ukuxazulula ingxabano phakathi kwe-voltage yokuqhekeka kanye nokumelana kochungechunge. Umqoqi we-transistor udinga i-voltage yokuqhekeka ephezulu, enqunywa ukumelana kwe-pn junction ye-silicon wafer. Ukuze kuhlangatshezwane nale mfuneko, kudingeka izinto zokumelana okuphezulu. Abantu ezintweni zokumelana okuphansi zohlobo lwe-n ezifakwe kakhulu ku-epitaxial ama-microns amaningana kuya kwayishumi nambili obukhulu obufakwe kancane ku-ungqimba lwe-n olune-high-resistance n, ukukhiqizwa kwe-transistor kungqimba lwe-epitaxial, okuxazulula i-voltage yokuqhekeka ephezulu edingekayo ukumelana okuphezulu kanye nokumelana okuphansi kochungechunge lwabaqoqi okudingeka ukumelana okuphansi kwe-substrate kokungqubuzana phakathi.
Ukukhula kwe-epitaxial yesigaba segesi kuyindlela yokuqala yokusetshenziswa emkhakheni we-semiconductor wobuchwepheshe bokukhula kwe-epitaxial obuvuthiwe, obudlala indima ebalulekile ekuthuthukisweni kwesayensi ye-semiconductor, okufaka isandla kakhulu ekhwalithini yezinto zokwakha kanye namadivayisi e-semiconductor kanye nokuthuthukiswa kokusebenza kwawo. Njengamanje, ukulungiswa kwefilimu ye-epitaxial yekristalu eyodwa ye-semiconductor kuyindlela ebaluleke kakhulu yokufakwa komphunga wamakhemikhali. Okubizwa ngokuthi ukufakwa komphunga wamakhemikhali, okungukuthi, ukusetshenziswa kwezinto zegesi ebusweni obuqinile bokusabela kwamakhemikhali, inqubo yokukhiqiza amadiphozithi aqinile. Ubuchwepheshe be-CVD bungakhulisa amafilimu e-single-crystal asezingeni eliphezulu, ukuthola uhlobo lwe-doping oludingekayo kanye nobukhulu be-epitaxial, okulula ukuqaphela ukukhiqizwa kwesisindo, ngakho-ke kuye kwasetshenziswa kabanzi embonini. Embonini, i-epitaxial wafer elungiselelwe yi-CVD ivame ukuba nengqimba eyodwa noma ngaphezulu ezingcwatshwe, ezingasetshenziswa ukulawula isakhiwo sedivayisi kanye nokusatshalaliswa kwe-doping ngokusabalala noma ukufakwa kwe-ion; izakhiwo zomzimba zengqimba ye-epitaxial ye-CVD zihlukile kulezo zezinto eziningi, futhi okuqukethwe kwe-oxygen kanye ne-carbon kwengqimba ye-epitaxial ngokuvamile kuphansi kakhulu, okuyinzuzo yayo. Nokho, ungqimba lwe-CVD epitaxial kulula ukulubumba, ezimweni ezingokoqobo kudingeka kuthathwe izinyathelo ezithile zokunciphisa ungqimba lwe-epitaxial lwe-self-doping, ubuchwepheshe be-CVD busesezicini ezithile zesimo senqubo yobufakazi, kudingeka kwenziwe ucwaningo olujulile, ukuze luqhubeke nokuthola intuthuko yobuchwepheshe be-CVD.
Indlela yokukhula kwe-CVD iyinkimbinkimbi kakhulu, ekuphenduleni kwamakhemikhali ngokuvamile kufaka phakathi izingxenye nezinto ezahlukahlukene, kungakhiqiza imikhiqizo eminingi ephakathi, futhi kunezinhlobo eziningi ezizimele, njengokushisa, ingcindezi, izinga lokugeleza kwegesi, njll., inqubo ye-epitaxial inezinyathelo eziningi ezilandelanayo, zokuthuthukisa nokuthuthukisa. Inqubo ye-epitaxial inezinyathelo eziningi ezilandelanayo, ezikhula ngokulinganayo neziphelelisanayo. Ukuze kuhlaziywe inqubo nendlela yokukhula kwe-epitaxial ye-CVD, okokuqala, ukucacisa ukuncibilika kwezinto ezisebenzayo esigabeni segesi, ukucindezela okuyingxenye yokulingana kwamagesi ahlukahlukene, izinqubo ezicacile ze-kinetic kanye ne-thermodynamic; bese kuqonda amagesi asebenzayo kusukela esigabeni segesi kuya ebusweni bokuthuthwa kwesisindo se-substrate, ukwakheka kwengqimba yomngcele wokugeleza kwegesi kanye nobuso be-substrate, ukukhula kwe-nucleus, kanye nokusabela kobuso, ukusabalala kanye nokufuduka, ngaleyo ndlela ekugcineni kukhiqize ifilimu oyifunayo. Enqubweni yokukhula kwe-CVD, ukuthuthukiswa kanye nentuthuko ye-reactor kudlala indima ebalulekile, okunquma kakhulu ikhwalithi yengqimba ye-epitaxial. Ukwakheka kobuso bengqimba ye-epitaxial, amaphutha e-lattice, ukusatshalaliswa nokulawulwa kokungcola, ukujiya kanye nokufana kwengqimba ye-epitaxial kuthinta ngqo ukusebenza kwedivayisi kanye nokukhiqiza.
–Lesi sihloko sikhishwe yi-umenzi womshini wokumboza nge-vacuumI-Guangdong Zhenhua
Isikhathi sokuthunyelwe: Meyi-04-2024