Girman Epitaxial, wanda aka fi sani da epitaxy, yana ɗaya daga cikin mahimman hanyoyin ƙera kayan semiconductor da na'urori. Abin da ake kira girma na epitaxial yana cikin wasu yanayi a cikin wani abu mai kama da lu'ulu'u ɗaya akan girman wani Layer na tsarin fim guda ɗaya, girma na fim ɗin crystal guda ɗaya ana kiransa da epitaxial layer fasahar epitaxial shine farkon shekarun 1960 a cikin binciken fim ɗin silicon guda ɗaya akan tushen fitowar ci gaban kusan rabin ƙarni yanzu, mutane sun sami damar yin nau'ikan fina-finan semiconductor iri-iri a ƙarƙashin wasu yanayi na ci gaban epitaxial. Fasahar Epitaxial ta magance matsaloli da yawa a cikin abubuwan da aka haɗa na semiconductor da da'irori masu haɗawa, suna inganta aikin na'urar sosai. Fim ɗin Epitaxial zai iya sarrafa kauri da halayen doping daidai, wannan fasalin ya haifar da saurin haɓaka da'irori masu haɗawa na semiconductor, zuwa wani mataki mafi kyau. Lu'ulu'u guda ɗaya na silicon ta hanyar yanka, niƙa, gogewa da sauran dabarun sarrafawa, don samun takardar gogewa, zaku iya yin abubuwan da aka haɗa da da'irori masu haɗawa akan sa. Amma a lokuta da yawa wannan takardar gogewa kawai a matsayin tallafi na injiniya ga substrate, wanda ya zama dole a fara shuka wani Layer na fim ɗin crystal guda ɗaya tare da nau'in conductivity da juriya mai dacewa, sannan kuma sassan da aka raba ko da'irori masu haɗawa waɗanda aka samar a cikin fim ɗin crystal guda ɗaya. Ana amfani da wannan hanyar, misali, wajen samar da transistors masu ƙarfi na silicon mai yawan mita, wanda ke warware rikici tsakanin ƙarfin lantarki mai lalacewa da juriyar jerin. Mai tarawa na transistor yana buƙatar babban ƙarfin lantarki mai lalacewa, wanda aka ƙaddara ta hanyar juriya na mahaɗin pn na wafer silicon. Domin biyan wannan buƙata, ana buƙatar kayan juriya mai yawa. Mutanen da ke cikin kayan n-type masu ƙarancin juriya akan epitaxial da yawa zuwa goma sha biyu microns masu kauri mai girman n-type mai sauƙin doped, samar da transistor a cikin Layer na epitaxial, wanda ke magance babban ƙarfin lantarki mai lalacewa da ake buƙata ta hanyar babban juriya da ƙarancin juriya na jerin masu tarawa da ake buƙata ta ƙarancin juriya na substrate na sabani tsakanin.
Girman epitaxial na iskar gas shine farkon aikace-aikacen a fannin semiconductor na fasahar girma ta epitaxial mafi girma, wanda ke taka muhimmiyar rawa a ci gaban kimiyyar semiconductor, yana ba da gudummawa sosai ga ingancin kayan semiconductor da na'urori da haɓaka aikinsu. A halin yanzu, shirya fim ɗin epitaxial na semiconductor guda ɗaya shine mafi mahimmancin hanyar adana tururin sinadarai. Abin da ake kira adana tururin sinadarai, wato, amfani da abubuwan gas a saman daskararrun amsawar sinadarai, tsarin samar da ma'adanai masu ƙarfi. Fasahar CVD na iya haɓaka fina-finan crystal guda ɗaya masu inganci, don samun nau'in doping da ake buƙata da kauri na epitaxial, mai sauƙin aiwatar da samar da taro, don haka an yi amfani da shi sosai a masana'antu. A cikin masana'antu, wafer ɗin epitaxial da CVD ta shirya sau da yawa yana da yadudduka ɗaya ko fiye da aka binne, waɗanda za a iya amfani da su don sarrafa tsarin na'urar da rarraba doping ta hanyar yaɗuwa ko dasa ion; halayen zahiri na Layer ɗin epitaxial na CVD sun bambanta da na kayan babban abu, kuma yawan iskar oxygen da carbon na Layer ɗin epitaxial gabaɗaya yana da ƙasa sosai, wanda shine fa'idarsa. Duk da haka, CVD epitaxial Layer yana da sauƙin samar da kai-doping, a aikace aikace-aikace buƙatar ɗaukar wasu matakai don rage epitaxial Layer na kai-doping, fasahar CVD har yanzu tana cikin wasu fannoni na yanayin aiwatarwa, tana buƙatar yin bincike mai zurfi, don haka ta ci gaba da samun ci gaban fasahar CVD.
Tsarin girma na CVD yana da matuƙar rikitarwa, a cikin amsawar sinadarai yawanci yana ƙunshe da nau'ikan abubuwa da abubuwa iri-iri, yana iya samar da samfuran matsakaici da yawa, kuma akwai masu canji masu zaman kansu da yawa, kamar zafin jiki, matsin lamba, ƙimar kwararar iskar gas, da sauransu, tsarin epitaxial yana da matakai da yawa na baya da gaba a jere, juna don haɓakawa da haɓakawa. Tsarin epitaxial yana da matakai da yawa masu gudana, masu faɗaɗa juna da kuma kammalawa. Don bincika tsari da tsarin girma na CVD epitaxial, da farko, don fayyace yadda abubuwa masu amsawa ke narkewa a cikin yanayin iskar gas, daidaita matsin lamba na iskar gas daban-daban, hanyoyin motsi da thermodynamic bayyanannu; sannan don fahimtar iskar gas mai amsawa daga matakin iskar gas zuwa saman jigilar taro na substrate, samuwar layin iyaka na kwararar iskar gas da saman substrate, haɓakar tsakiya, da kuma amsawar saman, yaɗuwa da ƙaura, don haka a ƙarshe samar da fim ɗin da ake so. A cikin tsarin girma na CVD, haɓakawa da ci gaban reactor suna taka muhimmiyar rawa, wanda galibi ke ƙayyade ingancin layin epitaxial. Tsarin saman Layer na epitaxial, lahani na lattice, rarrabawa da kuma kula da ƙazanta, kauri da daidaiton Layer na epitaxial suna shafar aikin na'urar da yawan amfanin ta kai tsaye.
– An fitar da wannan labarin ne dagainjin shafa injin injinGuangdong Zhenhua
Lokacin Saƙo: Mayu-04-2024