Ukukhula kwe-Epitaxial, okubizwa ngokuba yi-epitaxy, yenye yezona nkqubo zibalulekileyo ekwenziweni kwezinto kunye nezixhobo ze-semiconductor. Oku kubizwa ngokuba kukukhula kwe-epitaxial kukwimeko ezithile kwi-substrate yekristale enye ekukhuleni komaleko wenkqubo yefilimu yemveliso enye, ukukhula kwefilimu yekristale enye kubizwa ngokuba yi-epitaxial layer. Iteknoloji ye-epitaxial yaqala ngeminyaka yoo-1960 kuphando lwefilimu ye-silicon single-crystal thin ngokusekelwe ekuveleni kophuhliso lweminyaka ephantse ibe sisiqingatha senkulungwane ngoku, abantu baye bakwazi ukuphumeza iintlobo ngeentlobo zeefilimu ze-semiconductor phantsi kweemeko ezithile zokukhula kwe-epitaxial. Iteknoloji ye-Epitaxial isombulule iingxaki ezininzi kwiinxalenye ze-semiconductor discrete kunye neesekethe ezidibeneyo, iphucula kakhulu ukusebenza kwesixhobo. Ifilimu ye-Epitaxial inokulawula ngokuchanekileyo ubukhulu bayo kunye neepropati ze-doping, olu phawu lukhokelele kuphuhliso olukhawulezileyo lweesekethe ezidibeneyo ze-semiconductor, ukuya kwinqanaba eligqibeleleyo ngakumbi. I-silicon single crystal ngokusika, ukugaya, ukupolisha kunye nezinye iindlela zokucubungula, ukuze ufumane iphepha elipholisiweyo, ungenza iinxalenye ezihlukeneyo kunye neesekethe ezidibeneyo kuyo. Kodwa kwiimeko ezininzi eli phepha licociweyo kuphela njengenkxaso yoomatshini kwi-substrate, apho kufuneka kuqala kukhuliswe umaleko wefilimu ye-single-crystal enohlobo olufanelekileyo lwe-conductivity kunye ne-resistivity, kwaye emva koko kubekho izinto ezihlukeneyo okanye iisekethe ezidibeneyo eziveliswe kwifilimu ye-single-crystal. Le ndlela isetyenziswa, umzekelo, ekuvelisweni kwee-transistors zamandla aphezulu ze-silicon, ukusombulula ingxabano phakathi kwe-breakdown voltage kunye ne-series resistance. Umqokeleli we-transistor ufuna i-high breakdown voltage, emiselwa yi-resistivity ye-pn junction ye-silicon wafer. Ukuze kuhlangatyezwane nale mfuneko, kufuneka izinto ezixhathisayo. Abantu abakwi-heavy doped n-type low-resistance materials kwi-epitaxial ezininzi ukuya kwi-12 microns ubukhulu obuncinci obuxhathisayo ...
Ukukhula kwe-epitaxial yesigaba segesi yeyona ndlela iphambili yokusetyenziswa kwicandelo le-semiconductor yetekhnoloji yokukhula kwe-epitaxial evuthiweyo, edlala indima ebalulekileyo kuphuhliso lwesayensi ye-semiconductor, inegalelo elikhulu kumgangatho wezixhobo ze-semiconductor kunye nezixhobo kunye nokuphuculwa kokusebenza kwazo. Okwangoku, ukulungiswa kwefilimu ye-epitaxial ye-semiconductor single crystal yeyona ndlela ibalulekileyo yokufakwa komphunga wekhemikhali. Oko kubizwa ngokuba yi-chemical vapor deposition, oko kukuthi, ukusetyenziswa kwezinto zegesi kumphezulu oqinileyo we-chemical reaction, inkqubo yokuvelisa iidiphozithi eziqinileyo. Itekhnoloji ye-CVD inokukhulisa iifilimu ze-single-crystal ezikumgangatho ophezulu, ukuze kufunyanwe uhlobo lwe-doping olufunekayo kunye nobukhulu be-epitaxial, kulula ukuyiqonda imveliso yobuninzi, kwaye ke ngoko isetyenziswa kakhulu kushishino. Kushishino, i-epitaxial wafer elungiselelwe yi-CVD idla ngokuba nomgangatho omnye okanye ngaphezulu ongcwatyiweyo, onokusetyenziselwa ukulawula isakhiwo sesixhobo kunye nokusasazwa kwe-doping ngokusasazwa okanye ukufakwa kwe-ion; iipropati zomzimba zomaleko we-epitaxial we-CVD zahlukile kwezo zezinto ezininzi, kwaye umxholo we-oksijini kunye nekhabhoni womaleko we-epitaxial ngokubanzi uphantsi kakhulu, nto leyo eyinzuzo yayo. Nangona kunjalo, i-CVD epitaxial layer kulula ukuyenza i-self-doping, kwizicelo ezisebenzayo kufuneka kuthathwe amanyathelo athile okunciphisa i-epitaxial layer ye-self-doping, iteknoloji ye-CVD isesezindaweni ezithile zenkqubo yovavanyo, kufuneka kwenziwe uphando olunzulu ngakumbi, ukuze iqhubeke nokuphuhlisa iteknoloji ye-CVD.
Indlela yokukhula kwe-CVD iyinkimbinkimbi kakhulu, kwindlela esebenza ngayo ikhemikhali idla ngokuquka izinto ezahlukeneyo kunye nezinto, inokuvelisa inani leemveliso eziphakathi, kwaye kukho izinto ezininzi ezizimeleyo, ezinje ngobushushu, uxinzelelo, izinga lokuhamba kwegesi, njl.njl., inkqubo ye-epitaxial ineenani ezahlukeneyo ezibuyela umva nezibuyela umva ngokulandelelana, enye kwenye ukuze iphuhlise kwaye iphucule. Inkqubo ye-epitaxial inamanyathelo amaninzi alandelelanayo, akhula ngokulinganayo nagqibeleleyo. Ukuhlalutya inkqubo kunye nendlela yokukhula kwe-epitaxial ye-CVD, okokuqala, ukucacisa ukunyibilika kwezinto ezisebenzayo kwisigaba segesi, uxinzelelo oluyi-equilibrium oluyinxenye yeegesi ezahlukeneyo, iinkqubo ezicacileyo ze-kinetic kunye ne-thermodynamic; emva koko ukuqonda iigesi ezisebenzayo ukusuka kwisigaba segesi ukuya kumphezulu wothutho lobuninzi be-substrate, ukwakheka komaleko womda wokuhamba kwegesi kunye nomphezulu we-substrate, ukukhula kwe-nucleus, kunye nokusabela komphezulu, ukusasazwa kunye nokufuduka, kwaye ekugqibeleni ukuvelisa ifilimu efunekayo. Kwinkqubo yokukhula kwe-CVD, uphuhliso kunye nenkqubela ye-reactor idlala indima ebalulekileyo, emisela kakhulu umgangatho womaleko we-epitaxial. Imo yomphezulu womaleko we-epitaxial, iziphene ze-lattice, ukusasazwa kunye nolawulo lokungcola, ubukhulu kunye nokufana komaleko we-epitaxial kuchaphazela ngokuthe ngqo ukusebenza kwesixhobo kunye nokukhupha.
–Eli nqaku likhutshwe nguumenzi womatshini wokugquma nge-vacuumGuangdong Zhenhua
Ixesha leposi: Meyi-04-2024