Gukura kwa Epitaxial, akenshi byitwa epitaxy, ni imwe mu nzira z'ingenzi mu gukora ibikoresho bya semiconductor n'ibikoresho. Iterambere ryitwa epitaxial riri mu bihe bimwe na bimwe mu gice cy'ikirahure kimwe ku gukura kw'urwego rw'imikorere ya filime imwe y'ibicuruzwa, gukura kwa filime imwe y'ikirahure cyitwa epitaxial layer. Ikoranabuhanga rya epitaxial ni irya mbere ya za 1960 mu bushakashatsi bwa filime imwe y'ikirahure kimwe hashingiwe ku iterambere ryabaye mu myaka hafi mirongo itanu ishize, abantu bashoboye gukora filime zitandukanye za semiconductor mu bihe bimwe na bimwe by'iterambere rya epitaxial. Ikoranabuhanga rya Epitaxial ryakemuye ibibazo byinshi mu bice bitandukanye bya semiconductor n'imirongo ihuriweho, binoza cyane imikorere y'igikoresho. Filimi ya Epitaxial ishobora kugenzura neza ubunini bwayo n'imiterere yayo yo gukoresha imiti, iyi miterere yatumye iterambere ryihuse rya circuits za semiconductor, rigera ku cyiciro cyiza kurushaho. Silicon single crystal binyuze mu gukata, gusya, gusya n'ubundi buryo bwo gutunganya, kugira ngo ubone urupapuro rusesuye, ushobora gukora ibice bitandukanye n'imirongo ihuriweho kuri rwo. Ariko mu bihe byinshi uru rupapuro rusekuye nk'inkunga ya mekanike kuri substrate, aho biba ngombwa kubanza gukura urwego rwa filime imwe ifite ubwoko bukwiye bwo gutwara no kugabanya ingufu, hanyuma ibice bitandukanye cyangwa imiyoboro ivanze ikorwa muri filime imwe ifite kristale. Ubu buryo bukoreshwa, urugero, mu gukora transistors za silicon zifite imbaraga nyinshi, zikemura amakimbirane ari hagati ya voltage yo kugabanuka n'ubudahangarwa bw'uruhererekane. Ikusanya rya transistors risaba voltage yo kugabanuka cyane, igenwa n'ubudahangarwa bw'ihuriro rya pn rya silicon wafer. Kugira ngo ibi bigerweho, hakenewe ibikoresho byo kugabanuka cyane. Abantu bari mu bikoresho bya n-type bifite dope nyinshi cyane ku gice cya epitaxial cy'ubwoko bwa n gifite ubunini bungana na mikoroni icumi na cumi n'ebyiri, bikozwe na transistors mu gice cya epitaxial, bikemura voltage yo kugabanuka cyane isabwa n'ubudahangarwa bwinshi n'ubudahangarwa buke bw'uruhererekane rw'uruhererekane rusabwa n'ubudahangarwa buke bw'uruhererekane rw ...
Iterambere rya epitaxial mu gice cya gaze ni ryo rya mbere rikoreshwa mu ikoranabuhanga rya epitaxial rikuze, rigira uruhare runini mu iterambere rya siyansi ya semiconductor, rigira uruhare runini mu iterambere ry’ubumenyi bwa semiconductor, rigatanga umusanzu ukomeye mu bwiza bw’ibikoresho bya semiconductor n’ibikoresho bya semiconductor no kunoza imikorere yabyo. Kuri ubu, gutegura filime ya epitaxial ya semiconductor imwe ya crystal ni bwo buryo bw’ingenzi bwo gushyira umwuka wa chemical. Icyo bita chemical vapor deposition, ni ukuvuga gukoresha ibintu bya gazi ku buso bukomeye bw’imikorere ya chemical, inzira yo gukora deposits zikomeye. Ikoranabuhanga rya CVD rishobora gukura filime nziza za crystal imwe, kugira ngo haboneke ubwoko bwa doping bukenewe n’ubugari bwa epitaxial, byoroshye kubona umusaruro mwinshi, bityo rikaba ryarakoreshejwe cyane mu nganda. Mu nganda, wafer ya epitaxial itegurwa na CVD ikunze kugira urwego rumwe cyangwa nyinshi zishyinguye, zishobora gukoreshwa mu kugenzura imiterere y’igikoresho n’ikwirakwizwa rya doping binyuze mu gukwirakwiza cyangwa gushyiramo iyoni; imiterere y’urwego rwa CVD epitaxial itandukanye n’iy’ibikoresho byinshi, kandi ingano ya ogisijeni na karuboni mu urwego rwa epitaxial muri rusange ni nke cyane, ari na yo nyungu yayo. Ariko, urwego rwa CVD epitaxial rworoshye gukora self-doping, mu bikorwa bifatika hakenewe ingamba zimwe na zimwe zo kugabanya urwego rwa epitaxial rw'urwego rwa self-doping, ikoranabuhanga rya CVD riracyari mu bice bimwe na bimwe by'imikorere y'ubushakashatsi, hakenewe gukorwa ubushakashatsi bwimbitse, kugira ngo rikomeze kubona iterambere ry'ikoranabuhanga rya CVD.
Uburyo bwo gukura kwa CVD buragoye cyane, mu buryo bw’imiti busanzwe burimo ibice bitandukanye n’ibintu, bushobora gukora ibicuruzwa bitandukanye, kandi hari ibintu byinshi byigenga, nk’ubushyuhe, umuvuduko, umuvuduko w’umwuka, nibindi, uburyo bwa epitaxial bufite uburyo butandukanye bwo gusubira inyuma no kugaruka, buri kimwe kugira ngo gitere imbere kandi gitere imbere. Uburyo bwa epitaxial bufite intambwe nyinshi zikurikirana, zaguka kandi zinoze. Kugira ngo dusesengure inzira n’uburyo bwo gukura kwa CVD epitaxial, mbere ya byose, gusobanura uburyo ibintu bihinduka mu gice cya gazi, umuvuduko w’imvange y’imyuka itandukanye, inzira zisobanutse za kinetic na thermodynamic; hanyuma dusobanukirwe imvange y’imyuka ihinduka kuva ku gice cya gazi kugera ku buso bw’ubwikorezi bw’ibintu, ishyirwaho ry’urwego rw’umupaka w’umuvuduko wa gazi n’ubuso bw’igice cya gazi, gukura kwa nucleus, kimwe n’uburyo ubuso buhinduka, gukwirakwira no kwimuka, bityo amaherezo tukabyara filime yifuzwa. Mu buryo bwo gukura kwa CVD, iterambere n’iterambere rya reactor bigira uruhare runini, rugena ahanini ubwiza bw’urwego rwa epitaxial. Imiterere y'ubuso bw'urwego rwa epitaxial, inenge za lattice, ikwirakwizwa n'igenzurwa ry'imyanda, ubugari n'ubugari bw'urwego rwa epitaxial bigira ingaruka ku buryo butaziguye ku mikorere n'umusaruro w'igikoresho.
–Iyi nkuru yasohotse nauruganda rukora imashini zikora imashini zikoresha umwuka ushyushyeGuangdong Zhenhua
Igihe cyo kohereza: Gicurasi-04-2024