Kukura kweEpitaxial, kunowanzonziwo epitaxy, ndeimwe yenzira dzakakosha mukugadzirwa kwezvinhu zve semiconductor nemidziyo. Iyo inonzi epitaxial kukura iri mune mamwe mamiriro ezvinhu mu single crystal substrate pakukura kwechikamu chimwe chete chefirimu, kukura kwe single-crystal film kunonzi epitaxial layer. Tekinoroji ye epitaxial ndiyo yekutanga kwema1960 mu silicon single-crystal thin film research zvichibva pakubuda kwekukura kweinenge hafu yezana ramakore ikozvino, vanhu vakakwanisa kuita mafirimu akasiyana-siyana e semiconductor pasi pemamwe mamiriro ekukura kwe epitaxial. Tekinoroji ye Epitaxial yakagadzirisa matambudziko mazhinji mu semiconductor discrete components uye integrated circuits, zvichivandudza zvikuru mashandiro emudziyo. Epitaxial film inogona kudzora ukobvu hwayo uye doping properties, ichi chimiro chakatungamira mukukura nekukurumidza kwe semiconductor integrated circuits, kusvika padanho rakakwana. Silicon single crystal nekucheka, kukuya, kupukuta nedzimwe nzira dzekugadzirisa, kuti uwane pepa rakapoteredzwa, unogona kugadzira zvikamu zvakasiyana uye integrated circuits pairi. Asi kazhinji pepa iri rakakweshwa chete sekutsigira kwemuchina we substrate, umo zvinodikanwa kutanga kukura jira refirimu re single-crystal rine mhando yakakodzera ye conductivity uye resistivity, uye ipapo zvikamu zvakasiyana kana ma circuits akabatanidzwa anogadzirwa mufirimu re single-crystal. Nzira iyi inoshandiswa, semuenzaniso, mukugadzirwa kwe silicon high-frequency high-power transistors, kugadzirisa kusawirirana pakati pe breakdown voltage uye series resistance. Muunganidzi we transistor anoda high breakdown voltage, iyo inosarudzwa ne resistivity ye pn junction ye silicon wafer. Kuti zvizadzise chinodiwa ichi, zvinhu zve high resistance zvinodiwa. Vanhu vari mu heavy doped n-type low-resistance materials pa epitaxial akawanda kusvika gumi nemaviri microns gobvu lightly doped high-resistance n-type layer, transistor production mu epitaxial layer, iyo inogadzirisa high breakdown voltage inodiwa ne high resistivity uye low collector series resistivity inodiwa ne low substrate resistivity ye contradiction pakati.
Kukura kwegesi-phase epitaxial ndiyo nzira yekutanga kushandiswa muchikamu che semiconductor tekinoroji yakakura yekukura kwe epitaxial, iyo inoita basa rakakosha mukusimudzira sainzi ye semiconductor, ichibatsira zvikuru mumhando yezvinhu zve semiconductor nemidziyo uye kuvandudza mashandiro avo. Parizvino, kugadzirira semiconductor single crystal epitaxial film ndiyo nzira inonyanya kukosha yekuisa makemikari evapor. Iyo inonzi chemical vapor deposition, kureva, kushandiswa kwezvinhu zvegasi pamusoro pechinhu chakasimba chemakemikari reaction, maitiro ekugadzira solid deposits. Tekinoroji yeCVD inogona kukura mafirimu emhando yepamusoro e single-crystal, kuti iwane mhando yedoping inodiwa uye ukobvu hwe epitaxial, zviri nyore kuita kuti kugadzirwa kwehuwandu kuve nyore, uye nekudaro yakashandiswa zvakanyanya muindasitiri. Muindasitiri, epitaxial wafer yakagadzirwa neCVD inowanzova nechikamu chimwe kana kupfuura chakavigwa, chinogona kushandiswa kudzora chimiro chemudziyo uye kugoverwa kwedoping nekupararira kana kuiswa kweion; hunhu hwepanyama hweCVD epitaxial layer hwakasiyana nehwezvinhu zvakawanda, uye oxygen necarbon zvirimo mu epitaxial layer zvinowanzova zvakaderera, inova ndiyo mukana wayo. Zvisinei, CVD epitaxial layer iri nyore kugadzira self-doping, muzvishandiso zvinoshanda, vanofanira kutora matanho ekuderedza epitaxial layer ye self-doping, CVD tekinoroji ichiri mune zvimwe zvikamu zve empirical process state, vanoda kuita tsvakiridzo yakadzama, kuitira kuti irambe ichiwana kukura kweCVD tekinoroji.
Maitiro ekukura kweCVD akaomarara, mukuita kwemakemikari anowanzo sanganisira zvinhu zvakasiyana-siyana, anogona kugadzira zvigadzirwa zvepakati, uye kune zvakawanda zvakasiyana-siyana, zvakaita sekupisa, kumanikidzwa, mwero wekuyerera kwegasi, nezvimwewo, maitiro eepitaxial ane huwandu hwekudzoka nekudzokera shure, mumwe nemumwe kuti agadzire uye avandudze. Maitiro eepitaxial ane matanho akawanda anotevedzana, anowedzera uye anopedzisa. Kuongorora maitiro uye mashandiro ekukura kweCVD epitaxial, kutanga, kujekesa kunyungudika kwezvinhu zvinopindura muchikamu chegasi, kumanikidzwa kwechikamu chemagetsi akasiyana-siyana, maitiro akajeka ekinetic uye thermodynamic; wobva wanzwisisa magasi anopindura kubva pachikamu chegasi kuenda pamusoro pe substrate mass transport, kuumbwa kwemuganhu wechikamu chekuyerera kwegasi nepamusoro pe substrate, kukura kwenucleus, pamwe nekuita kwepamusoro, kupararira uye kufamba, uye pakupedzisira kugadzira firimu rinodiwa. Mukukura kweCVD, kukura nekufambira mberi kwereactor kunoita basa rakakosha, iro rinonyanya kusarudza mhando ye epitaxial layer. Maumbirwo epamusoro pe epitaxial layer, zvikanganiso zve lattice, kupararira uye kudzora tsvina, ukobvu uye kufanana kwe epitaxial layer zvinokanganisa zvakananga mashandiro emudziyo uye kugona kwayo.
–Chinyorwa ichi chakaburitswa namugadziri wemuchina wevacuum coatingGuangdong Zhenhua
Nguva yekutumira: Chivabvu-04-2024