Ukukhula kwe-Epitaxial, edla ngokubizwa ngokuba yi-epitaxy, yenye yezona nkqubo zibalulekileyo ekwenziweni kwezixhobo ze-semiconductor kunye nezixhobo. Ukukhula okubizwa ngokuba yi-epitaxial ukukhula kwiimeko ezithile kwi-crystal substrate enye ekukhuleni koluhlu lwenkqubo yefilimu yemveliso enye, ukukhula kwefilimu enye-crystal ibizwa ngokuba yi-epitaxial layer epitaxial technology yi-1960s yokuqala kwi-silicon enye-crystal yophando lwefilimu ebhityileyo ngesiseko sokuvela kophuhliso malunga nesiqingatha senkulungwane ngoku, abantu baye bakwazi ukuqaphela ifilimu ezahlukahlukeneyo phantsi kweemeko ezithile ze-epitaxial. I-teknoloji ye-Epitaxial isombulule iingxaki ezininzi kwiinqununu ze-semiconductor discrete kunye neesekethe ezidibeneyo, ukuphucula kakhulu ukusebenza kwesixhobo. Ifilimu ye-Epitaxial inokulawula ngokuchanekileyo ubukhulu bayo kunye neempawu ze-doping, eli nqaku liye lakhokelela ekuphuhlisweni ngokukhawuleza kweesekethe ezidibeneyo ze-semiconductor, kwisigaba esigqibeleleyo. I-silicon enye yekristale ngokusika, ukugaya, ukupolisha kunye nezinye iindlela zokulungisa, ukufumana iphepha elikhazimlayo, unokwenza izinto ezicacileyo kunye neesekethe ezidibeneyo kuyo. Kodwa kwiimeko ezininzi eli phepha elikhazimlisiweyo kuphela njengenkxaso yomatshini kwi-substrate, apho kuyimfuneko ukukhulisa kuqala ifilimu ye-crystal eyodwa kunye nohlobo olufanelekileyo lwe-conductivity kunye ne-resistiveivity, kwaye emva koko amacandelo ahlukeneyo okanye iisekethe ezidibeneyo eziveliswe kwifilimu enye ye-crystal. Le ndlela isetyenzisiweyo, umzekelo, ekuveliseni i-silicon high-frequency high-power transistors, ukusombulula ingxabano phakathi kwe-voltage yokuqhekeka kunye nokumelana nochungechunge. Umqokeleli we-transistor ufuna i-voltage ephezulu yokuphuka, enqunywe yi-resistivity ye-pn junction ye-silicon wafer. Ukuze kuhlangatyezwane nale mfuneko, izinto zokuxhathisa eziphezulu ziyafuneka. Abantu abakwizixhobo ezixhathisa kakhulu ze-n-uhlobo olusezantsi kwi-epitaxial eziliqela ukuya kwishumi elinesibini leemicrons ezityebileyo ezinokumelana nohlobo oluphezulu lwe-n, imveliso ye-transistor kumaleko we-epitaxial, osombulula amandla ombane aphezulu okuqhekeka okufunwa yi-resistivity ephezulu kunye nokuxhathisa okuphantsi komqokeleli okufunwa yi-substrate resistivity ephantsi yokuchasana phakathi.
Ukukhula kwe-gas-phase epitaxial yinkqubo yokuqala kwintsimi ye-semiconductor yeteknoloji yokukhula kwe-epitaxial ekhulile, edlala indima ebalulekileyo ekuphuhliseni isayensi ye-semiconductor, igalelo elikhulu kumgangatho wezinto ze-semiconductor kunye nezixhobo kunye nokuphucula ukusebenza kwazo. Okwangoku, ukulungiswa kwefilimu ye-semiconductor enye ye-crystal epitaxial yeyona ndlela ibalulekileyo yokubeka umphunga wekhemikhali. Into ebizwa ngokuba yi-chemical vapor deposition, oko kukuthi, ukusetyenziswa kwezinto ze-gaseous kwindawo eqinileyo ye-chemical reaction, inkqubo yokuvelisa iidiphozithi eziqinileyo. Itekhnoloji ye-CVD inokukhulisa iifilimu ezikumgangatho ophezulu we-single-crystal, ukufumana uhlobo olufunekayo lwe-doping kunye nobukhulu be-epitaxial, kulula ukuyiqonda imveliso yobuninzi, kwaye ngoko isetyenziswe ngokubanzi kwishishini. Kwishishini, i-epitaxial wafer elungiselelwe yi-CVD kaninzi inomaleko omnye okanye ngaphezulu angcwatywe, angasetyenziselwa ukulawula isakhiwo sesixhobo kunye nokusabalalisa i-doping ngokusasazwa okanye ukufakelwa kwe-ion; iimpawu ezibonakalayo ze-CVD epitaxial layer zihluke kwizinto ezininzi, kwaye i-oksijeni kunye nekhabhoni umxholo we-epitaxial layer iphantsi kakhulu, eyona nto iluncedo. Nangona kunjalo, i-CVD epitaxial layer ilula ukwenza i-self-doping, kwizicelo ezisebenzayo kufuneka ithathe amanyathelo athile okunciphisa i-epitaxial layer ye-self-doping, iteknoloji ye-CVD isekhona kwezinye iinkalo zenkqubo ye-empirical state, idinga ukwenza uphando olunzulu ngakumbi, ukuze iqhubeke ifumana uphuhliso lobuchwepheshe be-CVD.
Indlela yokukhula ye-CVD inzima kakhulu, kwi-chemical reaction idla ngokubandakanya amacandelo kunye nezinto ezahlukeneyo, inokuvelisa inani leemveliso eziphakathi, kwaye kukho izinto ezininzi ezizimeleyo, ezifana neqondo lokushisa, uxinzelelo, izinga lokuhamba kwegesi, njl. Inkqubo ye-epitaxial inamanyathelo amaninzi alandelelanayo, ukwandisa ngokufanayo kunye nokugqibelela. Ukuhlalutya inkqubo kunye nendlela yokukhula kwe-epitaxial ye-CVD, okokuqala, ukucacisa ukunyibilika kwezinto ezisebenzayo kwisigaba segesi, ukulingana koxinzelelo lweegesi ezahlukeneyo, iinkqubo ezicacileyo zekinetic kunye ne-thermodynamic; emva koko ukuqonda iigesi ezisebenzayo ukusuka kwisigaba segesi ukuya kumphezulu wokuthutha ubunzima be-substrate, ukubunjwa komda womda wokuhamba kwegesi kunye nomphezulu we-substrate, ukukhula kwe-nucleus, kunye ne-reaction ye-surface, ukusabalalisa kunye nokufuduka, kwaye ngaloo ndlela ekugqibeleni uvelise ifilimu efunwayo. Kwinkqubo yokukhula kwe-CVD, uphuhliso kunye nenkqubela phambili ye-reactor idlala indima ebalulekileyo, eyona nto inquma umgangatho we-epitaxial layer. I-morphology yomgangatho we-epitaxial layer, iziphene ze-lattice, ukusabalalisa kunye nokulawulwa kokungcola, ubukhulu kunye nokufana kwe-epitaxial layer kuchaphazela ngokuthe ngqo ukusebenza kwesixhobo kunye nesivuno.
–Eli nqaku likhutshwa nguumenzi womatshini wokugqumaGuangdong Zhenhua
Ixesha lokuposa: May-04-2024