Kobaca Epitaxial, oo inta badan loo yaqaan epitaxy, waa mid ka mid ah hababka ugu muhiimsan ee samaynta qalabka iyo qalabka semiconductor. Waxa loogu yeero koritaanka epitaxial waa in xaaladaha qaarkood ee substrate crystal hal on koritaanka lakabka ah geedi socodka film hal wax soo saarka, koritaanka filim hal-crystal waxaa loo yaqaan epitaxial lakabka tignoolajiyada epitaxial waa horraantii 1960-meeyadii ee Silicon hal-crystal dhuuban cilmi baaris ku salaysan soo ifbaxa ee horumarinta ee ku dhawaad nus qarni hadda, dadku waxay awoodeen in ay ogaadaan xaaladaha qaarkood ee epitaxial kala duwan. Tiknoolajiyada Epitaxial waxay xallisay dhibaatooyin badan oo ku saabsan qaybaha kala duwan ee semiconductor iyo wareegyada isku dhafan, si weyn u hagaajinaya waxqabadka qalabka. Filimka Epitaxial wuxuu si sax ah u xakameyn karaa dhumucdiisa iyo sifooyinka doping, qaabkani wuxuu horseeday horumarinta degdega ah ee wareegyada isku dhafan ee semiconductor, oo galay marxalad aad u fiican. Silicon hal crystal adigoo jarjaraya, shiidaya, dhalaalinaya iyo farsamooyinka kale ee farsamaynta, si aad u hesho xaashi dhalaalaysa, waxaad ku samayn kartaa qaybo kala duwan iyo wareegyo isku dhafan. Laakiin marar badan xaashidan la safeeyey oo kaliya sida taageero farsamo ee substrate ah, taas oo ay lagama maarmaan tahay in marka hore koraan lakabka filim hal-crystal leh nooca ku haboon conductivity iyo resistivity, ka dibna qaybaha discrete ama wareegyada isku dhafan soo saaray filim hal-crystal ah. Habkan waxaa loo isticmaalaa, tusaale ahaan, in wax soo saarka ee silikoon-soo noqnoqda sare-soo noqnoqda transistors awood sare, xallinta khilaafka u dhexeeya danab burburay iyo iska caabin taxane ah. Ururiyaha transistor-ku wuxuu u baahan yahay koronto burbursan oo sarreeya, kaas oo lagu go'aamiyo iska-caabbinta isku xirka pn ee wafer silikoon. Si loo buuxiyo shuruudahan, walxaha iska caabbinta sare ayaa loo baahan yahay. Dadka aadka u doped n-nooca wax-iska-caabbinta hoose ee epitaxial dhowr ilaa daraasiin microns dhumuc yar oo khafiif ah doped sare-iska caabinta n-nooca lakabka, wax soo saarka transistor ee lakabka epitaxial, kaas oo xalliya danab burburay sare ee looga baahan yahay iska caabin sare iyo ururiyaha hoose iska caabin looga baahan yahay iska caabin substrate hoose ee iska hor imaadka u dhexeeya.
Kobaca epitaxial-gas-wejiga waa codsiga ugu horreeya ee qaybta semiconductor-ka ee tignoolajiyada kobaca epitaxial aad u bislaaday, kaas oo door muhiim ah ka ciyaara horumarinta sayniska semiconductor, oo si weyn uga qaybqaata tayada agabka iyo aaladaha semiconductor-ka iyo hagaajintooda waxqabadka. Waqtigan xaadirka ah, diyaarinta semiconductor hal filim epitaxial crystal waa habka ugu muhiimsan ee kaydinta uumiga kiimikada. Waxa loogu yeero kaydka uumiga kiimikada, taas oo ah, isticmaalka walxaha gaaska ee dusha adag ee falcelinta kiimikada, habka abuurista kayd adag. Tiknoolajiyada CVD waxay kori kartaa filimo hal-crystal ah oo tayo sare leh, si loo helo nooca doping-ka loo baahan yahay iyo dhumucda epitaxial, si sahlan loo ogaado wax soo saarka tirada badan, sidaas darteed si ballaaran ayaa loo isticmaalay warshadaha. Warshadaha, waferka epitaxial ee ay diyaarisay CVD waxay inta badan leedahay hal ama in ka badan lakabyo duugan, kuwaas oo loo isticmaali karo in lagu xakameeyo qaabka qalabka iyo qaybinta doping by faafinta ama ion implantation; sifooyinka jireed ee lakabka epitaxial CVD way ka duwan yihiin kuwa walxaha badan, iyo oksijiinta iyo kaarboonka lakabka epitaxial guud ahaan waa mid aad u hooseeya, taas oo faa'iido u leh. Si kastaba ha ahaatee, lakabka epitaxial CVD waa sahlan tahay in la sameeyo is-doping, codsiyada la taaban karo waxay u baahan yihiin in la qaado tallaabooyin gaar ah si loo yareeyo lakabka epitaxial ee is-doping, tignoolajiyada CVD ayaa wali ku jira qaybo ka mid ah gobolka habka empirical, waxay u baahan tahay in la sameeyo cilmi-baaris qoto-dheer oo dheeraad ah, si ay u sii wado helitaanka horumarinta tignoolajiyada CVD.
Habka kobaca CVD waa mid aad u adag, falcelinta kiimikada sida caadiga ah waxaa ku jira qaybo kala duwan iyo walxo, waxay soo saari karaan tiro ka mid ah alaabada dhexdhexaadka ah, waxaana jira doorsoomayaal badan oo madaxbannaan, sida heerkulka, cadaadiska, heerka socodka gaaska, iwm., habka epitaxial wuxuu leeyahay tiro ka mid ah gadaal iyo gadaal si isdaba joog ah, midba midka kale si uu u horumariyo loona hagaajiyo. Habka epitaxial wuxuu leeyahay tillaabooyin badan oo isdaba-joog ah, is ballaarinaya oo dhammaystiraya. Si loo falanqeeyo habka iyo habka koritaanka epitaxial CVD, ugu horreyntii, si loo caddeeyo milanka walxaha fal-celinta ee wajiga gaaska, cadaadiska qayb ahaan dheellitirka gaasaska kala duwan, hababka kinetic cad iyo heerkulbeegga; ka dibna si loo fahmo gaasaska falceliska ah ee wejiga gaaska ilaa dusha sare ee gaadiidka tirada badan ee substrate, samaynta lakabka xadka ee socodka gaaska iyo dusha sare ee substrate-ka, koritaanka xudunta, iyo sidoo kale falcelinta dusha sare, faafinta iyo socdaalka, sidaas darteed ugu dambeyntii waxay dhalisaa filimka la rabo. Geedi socodka kobaca CVD, horumarka iyo horumarka reactor ayaa door muhiim ah ka ciyaara, kaas oo inta badan go'aamiya tayada lakabka epitaxial. Qaab-dhismeedka dusha sare ee lakabka epitaxial, cilladaha qulqulka, qaybinta iyo xakamaynta wasakhda, dhumucda iyo lebbiska lakabka epitaxial waxay si toos ah u saameeyaan waxqabadka qalabka iyo wax-soo-saarka.
–Maqaalkan waxa soo saaraysoo saaraha mashiinka daahan vacuumGuangdong Zhenhua
Waqtiga boostada: May-04-2024