Epitaxial kukura, inowanzonziwo epitaxy, ndeimwe yeanonyanya kukosha maitiro mukugadzirwa kwezvinhu zvesemiconductor uye zvishandiso. Iyo inonzi epitaxial kukura iri mune mamwe mamiriro mune imwechete crystal substrate pakukura kwechikamu chechimwe chigadzirwa firimu process, kukura kweimwe-crystal firimu kunonzi epitaxial layer epitaxial tekinoroji ndeyekutanga 1960s musilicon single-crystal yakaonda firimu tsvagiridzo pahwaro hwekubuda kwekuvandudzwa kweinoda kusvika hafu yezana ramakore ikozvino, vanhu vakakwanisa kuona mamiriro akasiyana-siyana eepitaxial firimu. Epitaxial tekinoroji yakagadzirisa matambudziko mazhinji mu semiconductor discrete components uye integrated circuits, inovandudza zvikuru kushanda kwechigadzirwa. Epitaxial firimu inogona kunyatso kudzora ukobvu hwayo uye doping zvimiro, chimiro ichi chatungamira kukurumidza kusimudzira kwesemiconductor yakabatanidzwa maseketi, mune imwe nhanho yakakwana. Silicon imwe kristaro nekucheka, kukuya, kupukuta uye mamwe maitiro ekugadzirisa, kuti uwane pepa rakakwenenzverwa, unogona kugadzira discrete zvikamu uye akasanganiswa maseketi pairi. Asi muzviitiko zvakawanda pepa iri rakakwenenzverwa chete sechitsigiro chemuchina weiyo substrate, iyo inofanirwa kutanga yakura jira reimwe-crystal firimu nemhando yakakodzera ye conductivity uye resistivity, uye ipapo discrete components kana integrated circuits inogadzirwa mune imwe-crystal film. Iyi nzira inoshandiswa, semuenzaniso, mukugadzirwa kwesilicon high-frequency high-power transistors, kugadzirisa kukakavara pakati pekuputsika kwemagetsi uye kupikisa kutevedzana. Muunganidzi weiyo transistor inoda yakakwira kuputsika voltage, iyo inotemerwa neresistive yepn junction yesilicon wafer. Kuti zvizadzise zvinodiwa izvi, zvinhu zvekupikisa zvakanyanya zvinodiwa. Vanhu vari mune yakanyanyisa doped n-mhando yakaderera-resistance zvinhu pa epitaxial akati wandei kusvika gumi nemaviri mamicrons akakora akareruka akakwira-resistance n-mhando layer, transistor kugadzirwa mu epitaxial layer, iyo inogadzirisa yakakwira breakdown voltage inodiwa neakakwira resistivity uye yakaderera muunganidzi nhevedzano kuramba inodiwa neiyo yakaderera substrate resistivity yekupokana pakati.
Gas-phase epitaxial kukura ndiyo yekutanga kushandiswa mumunda we semiconductor yeimwe yakakura epitaxial kukura tekinoroji, iyo inoita basa rakakosha mukusimudzira semiconductor sainzi, ichibatsira zvakanyanya kumhando yezvigadzirwa zve semiconductor nemidziyo uye kuvandudzwa kwekuita kwavo. Parizvino, kugadzirira semiconductor single crystal epitaxial film ndiyo inonyanya kukosha nzira yemakemikari vapor deposition. Iyo inonzi kemikari vapor deposition, ndiko kuti, kushandiswa kwegasi zvinhu panzvimbo yakasimba yemakemikari reaction, maitiro ekugadzira dhipoziti yakasimba. CVD tekinoroji inogona kukura emhando yepamusoro-single-crystal mafirimu, kuti iwane inodiwa doping rudzi uye epitaxial ukobvu, nyore kuona kugadzirwa kwakawanda, uye nekudaro yakashandiswa zvakanyanya muindasitiri. Muindasitiri, iyo epitaxial wafer inogadzirwa neCVD kazhinji ine imwe kana yakawanda yakavigwa mitsara, iyo inogona kushandiswa kudzora mudziyo chimiro uye kugovera doping nekupararira kana ion implantation; maitiro emuviri eCVD epitaxial layer akasiyana neaya ehuwandu hwezvinhu, uye okisijeni nekabhoni yemukati epitaxial layer kazhinji yakaderera zvakanyanya, inova mukana wayo. Zvisinei, CVD epitaxial layer iri nyore kuumba self-doping, mukuita maapplications inoda kutora matanho ekudzikisa epitaxial layer yeself-doping, CVD tekinoroji ichiri mune mamwe maempirical process state, inoda kuita tsvakiridzo yakadzama, kuitira kuti irambe ichiwana kuvandudzwa kwehunyanzvi hweCVD.
CVD yekukura meshini yakaoma kwazvo, mukuita kwemakemikari kazhinji inosanganisira zvakasiyana-siyana zvezvikamu uye zvinhu, zvinogona kuburitsa huwandu hwezvigadzirwa zvepakati, uye kune zvakawanda zvakazvimiririra zvakasiyana, senge tembiricha, kudzvanywa, kuyerera kwegasi, nezvimwewo, epitaxial process ine nhamba yekudzokera shure uye mberi zvakatevedzana, imwe neimwe kuvandudza nekuvandudza. Iyo epitaxial process ine akawanda anoteedzana, anowirirana kuwedzera uye kukwana matanho. Kuongorora maitiro uye mashandiro eCVD epitaxial kukura, kutanga kune zvese, kujekesa kunyungudika kwezvinhu zvinogadziriswa muchikamu chegasi, kuenzana kwechikamu chekumanikidzwa kwemagasi akasiyana-siyana, zvakajeka kinetic uye thermodynamic maitiro; zvino kuti unzwisise magasi anogadzirisa kubva pachikamu chegasi kusvika pamusoro pe substrate mass transport, kuumbwa kwemuganhu wemuganhu wekuyerera kwegasi uye pamusoro peiyo substrate, kukura kweiyo nucleus, pamwe nekuita kwepamusoro, kupararira uye kutama, uye nokudaro pakupedzisira kubudisa firimu rinodiwa. Mukukura kweCVD, kusimudzira uye kufambira mberi kweiyo reactor kunoita basa rakakosha, iro rinonyanya kuona kunaka kweiyo epitaxial layer. Iyo yepamusoro morphology ye epitaxial layer, lattice defects, kugovera uye kutonga kwetsvina, ukobvu uye kufanana kweiyo epitaxial layer inokanganisa zvakananga kushanda kwechigadzirwa uye goho.
-Chinyorwa ichi chakaburitswa navacuum coating machine mugadziriGuangdong Zhenhua
Nguva yekutumira: May-04-2024