Ububiko bwa Shimi

Gukura kwa Epitaxial, bakunze kwita epitaxy, nimwe mubikorwa byingenzi muguhimba ibikoresho bya semiconductor nibikoresho. Iterambere ryitwa epitaxial iri mubihe bimwe na bimwe muri sisitemu imwe ya kristaliste ku mikurire yikigero cyibikorwa bya firime imwe, imikurire ya firime imwe ya kirisiti yitwa epitaxial layer epitaxial tekinoloji ni intangiriro ya za 1960 mu bushakashatsi bwakozwe na silicon imwe ya kirisiti yoroheje ishingiye ku iterambere ry’imiterere y’ikinyejana cya kabiri ubu, abantu bashoboye kumenya imiterere itandukanye ya semiconductor. Epitaxial tekinoroji yakemuye ibibazo byinshi mubice bya semiconductor discret ibice hamwe na sisitemu ihuriweho, bitezimbere cyane imikorere yigikoresho. Epitaxial firime irashobora kugenzura neza ubunini bwayo hamwe na doping, iyi mikorere yatumye habaho iterambere ryihuse ryimikorere ya semiconductor ihuriweho, muburyo bwiza cyane. Silicon imwe ya kirisiti mugukata, gusya, gusya hamwe nubundi buryo bwo gutunganya, kugirango ubone urupapuro rusize, urashobora gukora ibice byihariye hamwe numuzunguruko wuzuye. Ariko mubihe byinshi iyi mpapuro isennye gusa nkubukanishi bwa substrate, aho ari ngombwa kubanza gukura igice cya firime imwe ya kirisiti hamwe nubwoko bukwiye bwo gutwara no kurwanya, hanyuma igatandukanya ibice cyangwa imiyoboro ikomatanyirijwe hamwe ikorerwa muri firime imwe. Ubu buryo bukoreshwa, kurugero, mugukora silicon yumurongo-mwinshi wa tristoriste, gukemura amakimbirane hagati ya voltage yamenetse hamwe no kurwanya urukurikirane. Ikusanyirizo rya tristoriste risaba voltage yo kumeneka cyane, igenwa nuburwanya bwa pn ihuza wa silicon wafer. Kugirango ibyo bisabwa bishoboke, harasabwa ibikoresho byo guhangana cyane. Abantu bari mubikoresho byinshi n-ibikoresho byo hasi-birwanya ubukana kuri epitaxial nyinshi kugeza kuri cumi na microne yibyibushye byoroheje byoroheje-by-n-urwego, umusaruro wa transistor mu gice cya epitaxial, ibyo bikaba bikemura ingufu za voltage nyinshi zisabwa nuburwanya bukabije hamwe nuruhererekane ruto rwakusanyirijwe hamwe no kwivuguruza kwinshi kwivuguruza hagati.

Iterambere rya gazi-fasi niyambere ikoreshwa murwego rwa semiconductor ya tekinoroji yo gukura ikuze ya epitaxial ikuze, igira uruhare runini mugutezimbere ubumenyi bwa semiconductor, bigira uruhare runini mubwiza bwibikoresho bya semiconductor nibikoresho ndetse no kunoza imikorere. Kugeza ubu, gutegura semiconductor imwe ya kirisiti ya epitaxial firime nuburyo bwingenzi bwo guta imyuka ya chimique. Ibyo bita imyuka ihumeka, ni ukuvuga, gukoresha ibintu bya gaze hejuru yubutaka bwa reaction ya chimique, inzira yo kubyara ibintu bikomeye. Tekinoroji ya CVD irashobora gukura neza murwego rwohejuru rwa firime imwe rukumbi, kugirango ibone ubwoko bwa doping bukenewe hamwe nubunini bwa epitaxial, byoroshye kubona umusaruro mwinshi, bityo bikaba byarakoreshejwe cyane mubikorwa. Mu nganda, epitaxial wafer yateguwe na CVD akenshi iba ifite igipande kimwe cyangwa byinshi byashyinguwe, bishobora gukoreshwa mugucunga imiterere yibikoresho no gukwirakwiza doping hakoreshejwe ikwirakwizwa cyangwa ion yatewe; imiterere yumubiri ya CVD epitaxial layer itandukanye niyinshi mubintu byinshi, kandi ogisijeni na karubone yibice bya epitaxial muri rusange ni bike cyane, nibyiza byayo. Nyamara, CVD epitaxial layer iroroshye gushiraho doping, mubikorwa bifatika bigomba gufata ingamba zimwe na zimwe kugirango igabanye epitaxial layer yo kwikorera-doping, ikoranabuhanga rya CVD riracyari mubice bimwe na bimwe byerekana imiterere-karemano, rikeneye gukora ubushakashatsi bwimbitse, kugirango rikomeze kubona iterambere ryikoranabuhanga rya CVD.

Uburyo bwo gukura bwa CVD buragoye cyane, mubitekerezo bya chimique mubisanzwe birimo ibice bitandukanye nibintu, birashobora kubyara ibicuruzwa byinshi hagati, kandi hariho ibintu byinshi byigenga, nkubushyuhe, umuvuduko, umuvuduko wa gazi, nibindi, inzira ya epitaxial ifite umubare winyuma ninyuma bikurikiranye, buriwese kugirango atere imbere kandi atezimbere. Inzira ya epitaxial ifite intambwe nyinshi zikurikirana, zagutse kandi zuzuza intambwe. Gusesengura inzira nuburyo bwo gukura kwa CVD epitaxial, mbere ya byose, kugirango dusobanure neza imbaraga ziterwa ningaruka zicyiciro cya gaze, umuvuduko wa equilibrium igice cya gaze zitandukanye, inzira ya kinetic na thermodynamic; hanyuma kugirango usobanukirwe na gaze yimyuka iva mubyiciro bya gaze kugeza hejuru yubwikorezi rusange bwa substrate, gushiraho urwego rwimbibi rwimyuka ya gaze hamwe nubuso bwa substrate, imikurire ya nucleus, hamwe nubuso bwibintu, gukwirakwizwa no kwimuka, bityo amaherezo bikabyara firime yifuzwa. Mubikorwa byo gukura kwa CVD, iterambere niterambere rya reaction bigira uruhare runini, bigena ahanini ubwiza bwurwego rwa epitaxial. Ubuso bwimiterere ya epitaxial layer, inenge ya lattice, gukwirakwiza no kugenzura umwanda, ubunini nuburinganire bwurwego rwa epitaxial bigira ingaruka kumikorere yibikoresho n'umusaruro.

–Iyi ngingo yasohowe naimashini ikora imashiniGuangdong Zhenhua