Ci gaban Epitaxial, wanda aka fi sani da epitaxy, yana ɗaya daga cikin mafi mahimmancin matakai a cikin ƙirƙira kayan aikin semiconductor da na'urori. The abin da ake kira epitaxial girma ne a cikin wasu yanayi a cikin guda crystal substrate a kan girma na wani Layer na daya samfurin fim tsari, da girma na guda-crystal fim ake kira epitaxial Layer epitaxial fasahar ne farkon 1960s a cikin silicon guda-crystal bakin ciki film bincike a kan tushen da bayyanar da ci gaban na kusan rabin karni yanzu, mutane sun sami damar gane wani iri-iri na fina-finai na epitaxial yanayi. Fasahar Epitaxial ta warware matsaloli da yawa a cikin abubuwan da suka dace na semiconductor da haɗaɗɗun da'irori, suna haɓaka aikin na'urar sosai. Fim ɗin Epitaxial zai iya sarrafa kaurinsa daidai da kaddarorin doping, wannan fasalin ya haifar da haɓaka haɓakar haɗin gwiwar semiconductor, zuwa mafi kyawun matakin. Silicon kristal guda ɗaya ta hanyar slicing, nika, gogewa da sauran dabarun sarrafawa, don samun takarda mai gogewa, zaku iya yin abubuwa masu hankali da haɗaɗɗun da'irori akansa. Amma a lokuta da yawa wannan goge takardar kawai a matsayin inji goyon baya ga substrate, a cikin abin da shi wajibi ne don fara girma Layer na guda-crystal fim tare da dace irin conductivity da resistivity, sa'an nan m aka gyara ko hadedde da'irori samar a cikin guda-crystal fim. Ana amfani da wannan hanyar, alal misali, a cikin samar da silinda mai ƙarfi mai ƙarfi transistor, warware rikice-rikice tsakanin wutar lantarki da juriya na jerin. Mai tarawa na transistor yana buƙatar babban ƙarfin rushewa, wanda aka ƙaddara ta hanyar tsayayyar pn junction na wafer silicon. Don saduwa da wannan buƙatun, ana buƙatar kayan juriya mai girma. Mutane a cikin nauyin doped n-type low-resistance kayan a kan epitaxial da yawa zuwa dozin microns lokacin farin ciki ɗauka da sauƙi doped high-resistance n-type Layer, transistor samar a cikin epitaxial Layer, wanda solves da high rushewar ƙarfin lantarki da ake bukata da high resistivity da low tara tara juriya da ake bukata da low substrate resistivity na sabawa tsakanin.
Ci gaban epitaxial na gas-lokaci shine aikace-aikacen farko a cikin filin semiconductor na fasaha mai girma na ci gaban epitaxial, wanda ke taka muhimmiyar rawa wajen haɓaka ilimin semiconductor, yana ba da gudummawa sosai ga ingancin kayan semiconductor da na'urori da haɓaka aikin su. A halin yanzu, shirye-shiryen semiconductor guda kristal epitaxial fim shine mafi mahimmancin hanyar shigar da tururin sinadarai. Abin da ake kira tururin sinadarai, wato, yin amfani da abubuwan da ke da iskar gas a kan ƙwanƙwaran sinadarai, tsarin samar da isasshen ajiya. Fasahar CVD na iya haɓaka manyan fina-finai guda-crystal masu inganci, don samun nau'in doping da ake buƙata da kauri na epitaxial, mai sauƙin fahimtar yawan samarwa, sabili da haka an yi amfani da shi sosai a cikin masana'antu. A cikin masana'antu, wafer epitaxial wanda CVD ya shirya sau da yawa yana da ɗaya ko fiye da aka binne yadudduka, wanda za'a iya amfani dashi don sarrafa tsarin na'urar da rarraba doping ta hanyar yadawa ko ion implantation; kaddarorin jiki na CVD epitaxial Layer sun bambanta da na babban abu, kuma iskar oxygen da carbon abun ciki na epitaxial Layer gabaɗaya yana da ƙasa sosai, wanda shine fa'idarsa. Duk da haka, CVD epitaxial Layer yana da sauƙi don samar da kai-doping, a cikin aikace-aikacen aikace-aikacen yana buƙatar ɗaukar wasu matakai don rage girman epitaxial na doping na kai, fasahar CVD har yanzu tana cikin wasu nau'o'in tsarin tsarin empirical, yana buƙatar yin ƙarin bincike mai zurfi, don haka ya ci gaba da samun ci gaban fasahar CVD.
Tsarin ci gaban CVD yana da matukar rikitarwa, a cikin halayen sinadaran yawanci ya haɗa da nau'o'in kayan aiki da abubuwa, zai iya samar da samfurori na tsaka-tsaki, kuma akwai nau'i-nau'i masu yawa masu zaman kansu, irin su zafin jiki, matsa lamba, yawan iskar gas, da dai sauransu, tsarin epitaxial yana da adadin baya da baya a jere, juna don haɓakawa da ingantawa. Tsarin epitaxial yana da matakai masu yawa masu zuwa, fadada juna da kuma cikakke. Don nazarin tsari da inji na CVD epitaxial girma, da farko, don bayyana solubility na reactive abubuwa a cikin gas lokaci, da ma'auni partially matsa lamba na daban-daban gas, bayyana motsin zuciyarmu da thermodynamic matakai; sa'an nan don fahimtar amsawar iskar gas daga lokacin iskar gas zuwa farfajiyar jigilar jigilar jigilar kayayyaki, da samuwar iyakokin iyaka na kwararar iskar gas da saman substrate, ci gaban tsakiya, da kuma yanayin yanayin, yaduwa da ƙaura, don haka ƙarshe haifar da fim ɗin da ake so. A cikin tsarin ci gaban CVD, haɓakawa da ci gaban reactor suna taka muhimmiyar rawa, wanda galibi ke ƙayyade ingancin Layer epitaxial. Halin yanayin sararin samaniya na Layer epitaxial, lahani na lattice, rarrabawa da sarrafa ƙazanta, kauri da daidaituwa na Layer epitaxial kai tsaye yana shafar aikin na'urar da yawan amfanin ƙasa.
–An fitar da wannan labarininjin shafa injin injinGuangdong Zhenhua
Lokacin aikawa: Mayu-04-2024