Isingeniso Sobuchwepheshe be-HiPIMS

Isimiso se-No.1 sokuphalaza kwe-magnetron enamandla aphezulu
Indlela yokukhipha i-magnetron enamandla amakhulu isebenzisa amandla aphezulu okushaya (ama-oda angu-2-3 aphezulu kunokukhipha i-magnetron okuvamile) kanye nomjikelezo womsebenzi wokushaya ophansi (0.5%-10%) ukuze kufezwe amazinga aphezulu okuhlukanisa insimbi (>50%), okususelwa ezicini zokukhipha i-magnetron, njengoba kuboniswe ku-Pic 1, lapho i-peak target current density I ilingana namandla e-exponential nth e-voltage yokukhipha i-U, I = kUn (n iyi-constant ehlobene nesakhiwo se-cathode, insimu yamagnetic kanye nezinto ezisetshenziswayo). Kumandla aphansi (i-voltage ephansi) inani le-n livame ukuba sebangeni eliphakathi kuka-5 no-15; nge-voltage yokukhipha ekhulayo, i-current density kanye ne-power density iyanda ngokushesha, futhi ku-voltage ephezulu inani le-n liba yi-1 ngenxa yokulahlekelwa yi-magnetic field confinement. Uma kumandla aphansi, ukukhishwa kwegesi kunqunywa ama-gas ion akwimodi evamile yokukhipha i-pulsed; Uma kunamandla aphezulu, isilinganiso sama-ion ensimbi ku-plasma siyanda futhi ezinye izinto ziyashintsha, okungukuthi kumodi yokuzikhandla, okungukuthi i-plasma igcinwa yi-ionization yezinhlayiya ezingathathi hlangothi ezikhafulelwe kanye nama-ion ensimbi esibili, futhi ama-athomu egesi angasebenzi njenge-Ar asetshenziswa kuphela ukukhanyisa i-plasma, ngemva kwalokho izinhlayiya zensimbi ezikhafulelwe ziyakhafulelwa eduze kwesihlonzi bese zisheshiswa zibuyele emuva ukuze zihlasele isihlonzi esikhafulelwe ngaphansi kwesenzo samasimu kazibuthe kanye nogesi ukuze kugcinwe ukukhishwa kwamandla kagesi okuphezulu, kanti i-plasma iyizinhlayiya zensimbi ezikhafulelwe kakhulu. Ngenxa yenqubo yokuphalaza yomphumela wokushisa kuthagethi, ukuze kuqinisekiswe ukusebenza okuzinzile kwethagethi ezisetshenziswayo zezimboni, ubuningi bamandla obusetshenziswa ngqo kuthagethi abukwazi ukuba bukhulu kakhulu, ngokuvamile ukupholisa amanzi ngqo kanye nokushisa kwezinto eziqondiwe kufanele kube uma kungaphansi kuka-25 W / cm2, ukupholisa amanzi ngokungaqondile, ukufudumala kwezinto eziqondiwe kubi, izinto eziqondiwe ezibangelwa ukuqhekeka ngenxa yokucindezeleka kokushisa noma izinto eziqondiwe ziqukethe izingxenye ze-alloy eziguquguqukayo eziphansi kanye nezinye izimo zobuningi bamandla zingaba ku-2 ~ 15 W / cm2 ngaphansi, ngaphansi kakhulu kwezidingo zobuningi bamandla aphezulu. Inkinga yokushisa kakhulu okuqondiwe ingaxazululwa ngokusebenzisa ama-pulse amancane kakhulu anamandla aphezulu. U-Anders uchaza i-magnetron pulsed sputtering enamandla aphezulu njengohlobo lwe-pulsed sputtering lapho ubuningi bamandla obuphezulu budlula ubuningi bamandla obumaphakathi ngama-oda angu-2 kuya kwangu-3 ubukhulu, futhi i-ion sputtering eqondiwe ibusa inqubo yokuphalaza, futhi ama-athomu okuphalaza okuqondiwe ahlukanisiwe kakhulu.

Cha.2 Izici zokufakwa kwe-magnetron sputtering coating enamandla aphezulu

Ukuphalaza kwe-magnetron okunamandla aphezulu kungakhiqiza i-plasma enesilinganiso esiphakeme sokuhlukaniswa kanye namandla aphezulu e-ion, futhi kungasebenzisa ingcindezi ye-bias ukusheshisa ama-ion ashajiwe, futhi inqubo yokufaka i-coating ihlaselwa yizinhlayiya ezinamandla aphezulu, okuwubuchwepheshe obujwayelekile be-IPVD. Amandla e-ion kanye nokusatshalaliswa kwawo kunomthelela obaluleke kakhulu kwikhwalithi ye-coating kanye nokusebenza kwayo.
Mayelana ne-IPVD, ngokusekelwe kumodeli wesifunda sesakhiwo esidumile saseThorton, u-Anders uphakamise imodeli yesifunda sesakhiwo ehlanganisa ukufakwa kwe-plasma kanye nokuqoshwa kwama-ion, wandisa ubudlelwano phakathi kwesakhiwo sokumboza kanye nokushisa kanye nomfutho womoya kumodeli yesifunda sesakhiwo saseThorton kuya ebuhlotsheni phakathi kwesakhiwo sokumboza, izinga lokushisa kanye namandla e-ion, njengoba kuboniswe ku-Pic 2. Endabeni yokumboza kwama-ion anamandla aphansi, isakhiwo sokumboza sihambisana nemodeli yendawo yesakhiwo saseThorton. Ngokwanda kokushisa kokufakwa, ukuguquka kusuka esifundeni 1 (amakristalu e-fiber akhululekile anezimbobo) kuya esifundeni T (amakristalu e-fiber aminyene), esifundeni 2 (amakristalu ekholomu) kanye nesifunda 3 (isifunda sokuphinda kukhiqizwe kabusha); ngokwanda kwamandla e-ion okufakwa, izinga lokushisa lokuguquka kusuka esifundeni 1 kuya esifundeni T, esifundeni 2 kanye nesifunda 3 liyancipha. Amakristalu e-fiber aphezulu kanye namakristalu ekholomu angalungiswa ekushiseni okuphansi. Lapho amandla ama-ion afakiwe enyuka aze afike ku-1-10 eV, ukuqhunyiswa nokuqoshwa kwama-ion ebusweni bezingubo ezifakiwe kuyakhuliswa futhi ukujiya kwezindwangu kuyanda.

No.3 Ukulungiswa kwesendlalelo sokumboza esiqinile ngobuchwepheshe bokubhoboza obunamandla aphezulu be-magnetron
Isembozo esilungiselelwe ubuchwepheshe be-magnetron sputtering obunamandla aphezulu siqinile, sinezakhiwo ezingcono zemishini kanye nokuqina kwezinga lokushisa eliphezulu. Njengoba kuboniswe ku-Pic 3, isembozo se-TiAlN esivamile se-magnetron sputtered siyisakhiwo sekristalu esinama-30 GPa kanye ne-modulus kaYoung engu-460 GPa; isembozo se-HIPIMS-TiAlN singukuqina kwe-34 GPa kanti i-modulus kaYoung ingu-377 GPa; isilinganiso phakathi kokuqina kanye ne-modulus kaYoung siyisilinganiso sokuqina kwesembozo. Ukuqina okuphezulu kanye ne-modulus encane kaYoung kusho ukuqina okungcono. Isembozo se-HIPIMS-TiAlN sinokuzinza kwezinga lokushisa eliphezulu okungcono, kanti isigaba se-AlN esinama-hexagonal sivele ekwembozweni kwe-TiAlN okuvamile ngemva kokwelashwa kokushisa okuphezulu ku-1,000 °C amahora angu-4. Ukuqina kwesembozo kwehla ekushiseni okuphezulu, kuyilapho isembozo se-HIPIMS-TiAlN singashintshi ngemva kokwelashwa kokushisa ngesikhathi esifanayo sokushisa nesikhathi. Isembozo se-HIPIMS-TiAlN siphinde sibe nokushisa okuphezulu kokuqala kokushiswa kokushisa okuphezulu kunesembozo esivamile. Ngakho-ke, isembozo se-HIPIMS-TiAlN sibonisa ukusebenza okungcono kakhulu kumathuluzi okusika asheshayo kunamanye amathuluzi amboziwe alungiselelwe inqubo ye-PVD.